CPC Class H04N

A photographing apparatus for preventing or reducing light leakage and an image sensor thereof are provided. The photographing apparatus includes an image sensor configured to include a plurality of pixels respectively having a Photo Diode and a Storage Diode for temporarily storing a charge accumulated in the Photo Diode and an image processor configured to perform an image processing operation by receiving the charge stored in the Storage Diode of each of the plurality of pixels. In addition, the image sensor has a structure where the Storage Diodes of the plurality of pixels are arrayed to be adjacent to each other. Accordingly, the photographing apparatus may prevent the light leakage from the adjacent pixel being flowed into a Storage Diode of each pixel.

A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.