Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor device comprising: a base; a gate electrode; a source electrode and a drain electrode; an interconnection layer, a semiconductor layer made; a gate insulating layer inserted between the gate electrode and the semiconductor layer, wherein the semiconductor layer includes a channel-forming region and a non-channel-forming region, the channel-forming region is in contact with the source electrode and the drain electrode, the non-channel-forming region is in contact with the source electrode and the drain electrode, and each of the channel-forming region and the non-channel-forming region has an insulating-layer-facing face facing the gate insulating layer, and an opposite face opposite to the insulating-layer-facing face and facing the source and drain electrodes, and the opposite face of the non-channel-forming region which is opposite to the insulating-layer-facing face faces the interconnection layer and the source and drain electrodes.
This invention relates to a semiconductor device designed to improve electrical performance and reliability. The device includes a base, a gate electrode, source and drain electrodes, an interconnection layer, and a semiconductor layer. A gate insulating layer is positioned between the gate electrode and the semiconductor layer. The semiconductor layer is divided into a channel-forming region and a non-channel-forming region. The channel-forming region is in direct contact with the source and drain electrodes, allowing current flow when the device is active. The non-channel-forming region also contacts the source and drain electrodes but does not conduct current. Both regions have two faces: an insulating-layer-facing face adjacent to the gate insulating layer and an opposite face that faces the source and drain electrodes. The opposite face of the non-channel-forming region additionally interfaces with the interconnection layer and the source and drain electrodes. This structure enhances device efficiency by optimizing current pathways and reducing parasitic effects. The design ensures proper electrical isolation while maintaining conductivity in the active regions, improving overall performance and reliability in semiconductor applications.
2. The semiconductor device according to claim 1 , wherein the non-channel-forming region is in contact with the interconnection layer connected with the source electrode or the drain electrode.
Technical Summary: This invention relates to semiconductor devices, specifically addressing the integration of non-channel-forming regions with interconnection layers in transistor structures. The problem being solved involves improving electrical connectivity and performance in semiconductor devices by optimizing the interface between non-channel regions and conductive interconnections. The semiconductor device includes a non-channel-forming region that is directly in contact with an interconnection layer. This interconnection layer is electrically connected to either the source electrode or the drain electrode of the transistor. The non-channel-forming region is typically an area of the semiconductor material that does not contribute to the primary charge carrier transport (i.e., the channel region) but may still play a role in device operation, such as reducing leakage current or improving isolation. By ensuring direct contact between this region and the interconnection layer, the invention enhances electrical conductivity and reduces resistance in the device. This design is particularly useful in advanced semiconductor technologies where minimizing parasitic resistances and improving signal integrity are critical. The interconnection layer may be a metal or conductive material patterned to form electrical pathways within the device, ensuring efficient signal transmission between the transistor electrodes and other circuit components. The invention aims to improve device performance, reliability, and scalability in integrated circuit applications.
3. The semiconductor device according to claim 2 , wherein the semiconductor device is a top-contact type.
A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and a first electrode and a second electrode formed on the semiconductor layer. The first electrode is electrically connected to a first region of the semiconductor layer, and the second electrode is electrically connected to a second region of the semiconductor layer. The semiconductor device is configured to generate an electric signal in response to incident light. The device further includes a light-transmitting layer formed on the semiconductor layer, where the light-transmitting layer has a refractive index lower than that of the semiconductor layer. The light-transmitting layer is positioned between the semiconductor layer and the incident light. The semiconductor device is a top-contact type, meaning the electrodes are formed on the top surface of the semiconductor layer, allowing light to pass through the light-transmitting layer before reaching the semiconductor layer. This structure enhances light absorption efficiency by reducing reflection and improving optical coupling between the incident light and the semiconductor layer. The device is particularly useful in photodetectors, solar cells, or other optoelectronic applications where efficient light absorption is critical.
4. A display device comprising: a light control device configured to emit light; and a drive circuit configured to control light output of the light control device, wherein the drive circuit includes the semiconductor device of claim 2 , the semiconductor device driving the light control device.
A display device includes a light control device and a drive circuit. The light control device emits light, and the drive circuit regulates the light output of the light control device. The drive circuit incorporates a semiconductor device that drives the light control device. The semiconductor device includes a first transistor and a second transistor, where the first transistor has a first conductivity type and the second transistor has a second conductivity type opposite to the first. The first transistor is connected to a first power supply line, and the second transistor is connected to a second power supply line. The semiconductor device also includes a control circuit that adjusts the voltage applied to the first transistor based on the voltage of the second power supply line, ensuring stable operation across varying power supply conditions. This configuration improves the efficiency and reliability of the display device by maintaining consistent light output while reducing power fluctuations. The drive circuit's integration with the semiconductor device allows for precise control of the light control device, enhancing display performance.
5. The semiconductor device according to claim 1 , wherein the semiconductor device is a top-contact type.
A semiconductor device with a top-contact configuration is disclosed. The device includes a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer is positioned between the first and second electrodes, which are electrically connected to the semiconductor layer. The top-contact design allows electrical contact to be made from the top surface of the semiconductor layer, distinguishing it from bottom-contact configurations where connections are made from the bottom. This structure is particularly useful in applications requiring efficient charge transport and reduced parasitic capacitance, such as in high-frequency or high-power semiconductor devices. The top-contact arrangement simplifies fabrication processes by eliminating the need for complex alignment of electrodes on opposite sides of the semiconductor layer. The device may be used in transistors, diodes, or other semiconductor components where top-side electrical connections are advantageous. The semiconductor layer can be composed of various materials, including silicon, gallium nitride, or other semiconductor compounds, depending on the application requirements. The electrodes are typically made of conductive materials like metals or conductive oxides, ensuring low-resistance contact with the semiconductor layer. This configuration enhances device performance by minimizing contact resistance and improving thermal dissipation.
6. A display device comprising: a light control device configured to emit light; and a drive circuit configured to control light output of the light control device, wherein the drive circuit includes the semiconductor device of claim 5 , the semiconductor device driving the light control device.
A display device includes a light control device that emits light and a drive circuit that regulates the light output of the light control device. The drive circuit incorporates a semiconductor device designed to drive the light control device. The semiconductor device includes a first transistor with a first conductivity type, a second transistor with a second conductivity type, and a third transistor with the first conductivity type. The first transistor has a first terminal connected to a first power supply line and a second terminal connected to a first node. The second transistor has a first terminal connected to the first node and a second terminal connected to a second power supply line. The third transistor has a first terminal connected to the first node and a second terminal connected to a third power supply line. The semiconductor device also includes a fourth transistor with the second conductivity type, where the fourth transistor has a first terminal connected to the first node and a second terminal connected to a fourth power supply line. The drive circuit controls the light output of the light control device by adjusting the voltage or current supplied to the light control device through the semiconductor device. This configuration allows for precise control of the light emission characteristics, improving display performance and efficiency. The semiconductor device's structure ensures stable operation and reduces power consumption, making it suitable for high-resolution and energy-efficient display applications.
7. A display device comprising: a light control device configured to emit light; and a drive circuit configured to control light output of the light control device, wherein the drive circuit includes the semiconductor device of claim 1 , the semiconductor device driving the light control device.
A display device includes a light control device and a drive circuit. The light control device emits light, while the drive circuit regulates the light output of the light control device. The drive circuit incorporates a semiconductor device that drives the light control device. The semiconductor device includes a semiconductor layer with a first conductivity type, a second conductivity type region formed in the semiconductor layer, and a gate electrode positioned adjacent to the second conductivity type region. The gate electrode is electrically connected to a gate wiring layer, and the second conductivity type region is electrically connected to a source wiring layer. The semiconductor device also includes a first insulating layer between the gate wiring layer and the semiconductor layer, and a second insulating layer between the source wiring layer and the semiconductor layer. The gate wiring layer and the source wiring layer are formed in a same layer, and the gate wiring layer is electrically connected to a gate pad, while the source wiring layer is electrically connected to a source pad. The semiconductor device further includes a third insulating layer covering the gate wiring layer and the source wiring layer, and a fourth insulating layer covering the third insulating layer. The semiconductor device is designed to efficiently control the light control device, ensuring precise light output modulation for display applications. The structure minimizes electrical interference and enhances reliability, making it suitable for high-performance display systems.
8. The display device according to claim 7 , wherein the light control device includes any one of an electroluminescence device, an electrochromic device, a liquid crystal device, an electrophoretic device, and an electrowetting device.
A display device includes a light control device configured to adjust the transmittance of light passing through a display panel. The light control device is positioned between a light source and the display panel, allowing dynamic control of light transmission to enhance display performance. The light control device can be implemented using various technologies, including electroluminescence, electrochromic, liquid crystal, electrophoretic, or electrowetting devices. These technologies enable precise modulation of light properties, such as brightness and contrast, to improve visibility and energy efficiency. The display device may also include a light source, a display panel, and a light guide plate to direct light through the light control device before reaching the display panel. The light control device can be integrated into the display panel or positioned separately to optimize light transmission. This configuration allows for adaptive adjustments based on ambient lighting conditions or user preferences, enhancing the overall display quality. The use of different light control technologies provides flexibility in design and performance, catering to various display applications.
9. A display apparatus comprising: a display unit that includes a matrix of a plurality of the display devices of claim 7 ; and a display control device configured to control the display devices, individually.
A display apparatus is designed to address the challenge of achieving high-resolution, individually controllable displays with improved efficiency and performance. The apparatus includes a display unit composed of a matrix of multiple display devices, each capable of emitting light in response to an applied signal. These display devices are structured to enhance light extraction efficiency and reduce power consumption by incorporating a light-emitting layer and a reflective layer that directs emitted light outward while minimizing internal losses. The display control device is configured to independently control each display device, allowing for precise modulation of light output across the matrix. This enables high-resolution imaging, dynamic brightness adjustment, and efficient power management. The apparatus is particularly suited for applications requiring high-performance displays, such as high-definition screens, augmented reality devices, and energy-efficient electronic displays. The combination of individually addressable display devices and optimized light extraction mechanisms ensures superior visual quality and operational efficiency.
10. A system comprising: the display apparatus of claim 9 ; and an image data generation apparatus configured to supply image data to the display apparatus.
A system includes a display apparatus and an image data generation apparatus. The display apparatus has a display panel with a plurality of pixels, each pixel including a light-emitting element and a drive circuit. The drive circuit includes a drive transistor, a capacitor, and a switching transistor. The switching transistor controls electrical connection between a data line and a gate of the drive transistor. The capacitor is connected between the gate of the drive transistor and a power supply line. The drive transistor supplies current to the light-emitting element based on a voltage stored in the capacitor. The image data generation apparatus generates and supplies image data to the display apparatus, which controls the drive circuit to adjust the current supplied to the light-emitting elements, thereby modulating the brightness of each pixel. This system addresses the challenge of achieving uniform and precise brightness control in display panels, particularly in organic light-emitting diode (OLED) displays, by ensuring stable current drive through the drive transistor and minimizing variations in brightness across the display. The system enhances display performance by maintaining consistent image quality and reducing power consumption through efficient current regulation.
11. The semiconductor device according to claim 1 , wherein a material of the non-channel-forming region includes at least one oxide selected from the group consisting of Mg-In based oxides, In-Sr based oxides, In-Ca based oxides, or In-Ba based oxides.
This invention relates to semiconductor devices, specifically those incorporating oxide-based materials in non-channel-forming regions to improve performance. The problem addressed is enhancing device reliability and efficiency by selecting appropriate oxide materials for regions outside the active channel, where charge transport occurs. The non-channel-forming regions, such as gate insulators or barrier layers, play a critical role in device stability and leakage current suppression. The invention specifies that the non-channel-forming region includes at least one oxide selected from Mg-In based oxides, In-Sr based oxides, In-Ca based oxides, or In-Ba based oxides. These materials are chosen for their high dielectric constants, thermal stability, and compatibility with semiconductor processing. The oxides help reduce interface traps, minimize charge leakage, and improve overall device endurance. The selection of these specific oxides ensures optimal electrical insulation and thermal resistance, which are essential for high-performance semiconductor applications, including transistors and memory devices. The use of these materials in non-channel regions enhances device longevity and operational efficiency by mitigating degradation effects caused by electrical stress and thermal cycling.
12. A semiconductor device comprising: a base; a gate electrode; a source electrode and a drain electrode; an interconnection layer, a semiconductor layer; a gate insulating layer interposed between the gate electrode and the semiconductor layer, wherein the semiconductor layer includes a channel-forming region and a non-channel-forming region, the channel-forming region is in contact with the source electrode and the drain electrode, the non-channel-forming region is in contact with the source electrode and the drain electrode, and each of the channel-forming region and the non-channel-forming region has an insulating-layer-facing face facing the gate insulating layer, and an opposite face opposite to the insulating-layer-facing face and facing the source and drain electrodes, and the opposite face of the non-channel-forming region which is opposite to the insulating-layer-facing face is in contact with the interconnection layer.
This invention relates to a semiconductor device, specifically a field-effect transistor (FET) with an improved structure for enhanced electrical performance. The device addresses challenges in conventional semiconductor designs, such as high leakage currents and inefficient charge carrier mobility, by optimizing the semiconductor layer's configuration. The semiconductor device includes a base, a gate electrode, source and drain electrodes, an interconnection layer, and a semiconductor layer. A gate insulating layer separates the gate electrode from the semiconductor layer. The semiconductor layer is divided into a channel-forming region and a non-channel-forming region. The channel-forming region, which conducts current between the source and drain electrodes, is in direct contact with both electrodes. The non-channel-forming region, which does not conduct current, also contacts the source and drain electrodes but is electrically isolated from the channel-forming region. Both regions have two faces: an insulating-layer-facing face adjacent to the gate insulating layer and an opposite face facing the source and drain electrodes. The opposite face of the non-channel-forming region is in contact with the interconnection layer, which may serve to electrically connect or isolate components. This design allows for precise control of current flow, reducing leakage and improving device efficiency. The structure is particularly useful in high-performance semiconductor applications where minimizing parasitic effects is critical.
13. The semiconductor device according to claim 12 , wherein the non-channel-forming region is in contact with the interconnection layer connected with the source electrode or the drain electrode.
A semiconductor device includes a semiconductor layer with a channel-forming region and a non-channel-forming region. The channel-forming region is configured to form a channel between a source electrode and a drain electrode. The non-channel-forming region is adjacent to the channel-forming region and is in contact with an interconnection layer that is electrically connected to either the source electrode or the drain electrode. The interconnection layer provides electrical connectivity to the non-channel-forming region, which may improve device performance by reducing resistance or enhancing current flow. The semiconductor layer may be part of a transistor structure, where the channel-forming region is controlled by a gate electrode to modulate current between the source and drain electrodes. The non-channel-forming region may be doped differently from the channel-forming region to optimize electrical properties. The interconnection layer ensures efficient signal transmission between the semiconductor layer and external circuitry, improving overall device functionality. This configuration is particularly useful in high-performance semiconductor devices where low resistance and reliable electrical connections are critical.
14. The semiconductor device according to claim 12 , wherein a material of the non-channel-forming region includes at least one oxide selected from the group consisting of Mg-In based oxides, In-Sr based oxides, In-Ca based oxides, or In-Ba based oxides.
This invention relates to semiconductor devices, specifically those incorporating oxide-based materials in non-channel-forming regions to improve device performance. The problem addressed is the need for stable, high-performance semiconductor materials that can be integrated into advanced electronic devices while maintaining reliability and efficiency. The semiconductor device includes a channel-forming region and a non-channel-forming region, where the non-channel-forming region is composed of a specific oxide material. The non-channel-forming region contains at least one oxide selected from Mg-In based oxides, In-Sr based oxides, In-Ca based oxides, or In-Ba based oxides. These oxides are chosen for their electrical and thermal stability, as well as their compatibility with semiconductor fabrication processes. The non-channel-forming region may function as an insulating layer, a barrier layer, or a passivation layer, depending on the device architecture. The use of these oxide materials in the non-channel-forming region enhances device reliability by reducing leakage currents, improving thermal stability, and preventing degradation over time. The oxides also provide a high dielectric constant, which is beneficial for miniaturized semiconductor devices. The invention is particularly useful in transistors, memory devices, and other semiconductor components where stability and performance are critical. The selection of these specific oxides ensures that the non-channel-forming region maintains its properties under various operating conditions, contributing to the overall longevity and efficiency of the semiconductor device.
15. A display device comprising: a light control device configured to emit light; and a drive circuit configured to control light output of the light control device, wherein the drive circuit includes the semiconductor device of claim 12 , the semiconductor device driving the light control device.
This invention relates to a display device with improved light control and driving efficiency. The device addresses the challenge of efficiently managing light output in displays, particularly in applications requiring precise control over brightness and power consumption. The display device includes a light control device, such as an LED or OLED, configured to emit light, and a drive circuit that regulates the light output of the light control device. The drive circuit incorporates a semiconductor device designed to enhance driving performance. This semiconductor device features a gate structure with a gate electrode and a gate insulating film, where the gate electrode includes a first conductive layer and a second conductive layer. The first conductive layer is formed on the gate insulating film, while the second conductive layer is formed on the first conductive layer and has a higher melting point than the first conductive layer. This dual-layer structure improves thermal stability and electrical conductivity, ensuring reliable operation under varying conditions. The drive circuit uses this semiconductor device to drive the light control device, optimizing power efficiency and light output control. The overall design aims to enhance display performance while reducing energy consumption.
16. The display device according to claim 15 , wherein the light control device includes any one of an electroluminescence device, an electrochromic device, a liquid crystal device, an electrophoretic device, and an electrowetting device.
A display device includes a light control device configured to adjust the transmission or reflection of light to control the visibility of an image. The light control device can be integrated with a display panel to enhance image contrast or privacy by selectively modulating light passing through or reflecting off the device. The light control device may include an electroluminescence device, an electrochromic device, a liquid crystal device, an electrophoretic device, or an electrowetting device. These technologies enable dynamic control over light properties, such as transparency, color, or reflectance, by applying electrical signals. The electroluminescence device emits light in response to an electric current, while the electrochromic device changes optical properties, such as tint or opacity, through electrochemical reactions. The liquid crystal device manipulates light polarization, the electrophoretic device moves charged particles to alter appearance, and the electrowetting device adjusts surface tension to control light reflection. The display device can be used in applications requiring adjustable visibility, such as privacy screens, adaptive displays, or smart windows. The light control device operates in conjunction with the display panel to provide a versatile solution for controlling image visibility under varying lighting conditions.
17. A display apparatus comprising: a display unit that includes a matrix of a plurality of the display devices of claim 15 ; and a display control device configured to control the display devices, individually.
A display apparatus includes a matrix of display devices and a control system to manage each device individually. The display devices are arranged in a grid pattern, where each device can be independently controlled to adjust its display characteristics. The control system regulates the operation of each display device, allowing for precise modulation of light output, color, or other display parameters. This configuration enables high-resolution and dynamic display capabilities, where individual pixels or segments can be adjusted without affecting neighboring elements. The apparatus is designed to address challenges in achieving uniform and high-fidelity visual output in display systems, particularly where independent control of multiple display elements is required. The matrix structure ensures scalability, allowing for large or small display areas with consistent performance. The control system may include circuitry or software to process input signals and translate them into commands for each display device, ensuring accurate and responsive display behavior. This setup is useful in applications requiring high precision, such as high-definition screens, adaptive lighting systems, or specialized imaging devices. The independent control of each display device allows for advanced features like dynamic contrast adjustment, localized brightness control, or customizable display patterns. The overall design aims to enhance display quality, flexibility, and efficiency in various electronic and optical applications.
18. A system comprising: the display apparatus of claim 17 ; and an image data generation apparatus configured to supply image data to the display apparatus.
A system includes a display apparatus and an image data generation apparatus. The display apparatus has a display panel with a plurality of pixels, each pixel including a light-emitting element and a drive circuit. The drive circuit includes a light-emitting element control circuit that controls the light-emitting element based on a drive signal, and a drive signal generation circuit that generates the drive signal based on a data signal. The drive signal generation circuit includes a voltage generation circuit that generates a voltage based on the data signal, and a current generation circuit that generates a current based on the voltage. The current generation circuit includes a current mirror circuit that outputs a current proportional to the voltage. The image data generation apparatus supplies image data to the display apparatus, which is used to generate the data signal for driving the pixels. This system enables precise control of the light-emitting elements in the display panel, improving display performance by ensuring accurate current output based on the input data signal. The current mirror circuit in the current generation circuit ensures consistent current output, enhancing uniformity and reliability of the display. The system is particularly useful in high-resolution displays where precise control of pixel brightness is critical.
Unknown
September 3, 2019
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