Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A system configured to detect defects on a wafer, comprising: an inspection subsystem configured to acquire information for a target on a wafer, wherein the inspection subsystem comprises at least first and second channels, wherein the target comprises a pattern of interest formed on the wafer and a known defect of interest occurring proximate to or in the pattern of interest, and wherein the information comprises a first image of the pattern of interest on the wafer acquired by imaging the pattern of interest on the wafer with the first channel of the inspection subsystem and a second image of the known defect of interest on the wafer acquired by imaging the known defect of interest with the second channel of the inspection subsystem; wherein the inspection subsystem is further configured to search for target candidates on the wafer or on another wafer, wherein the target candidates comprise the pattern of interest; and a computer system configured to detect the known defect of interest in the target candidates by identifying potential defect of interest locations based on images of the target candidates acquired by the first channel and applying one or more detection parameters to one or more images acquired by at least the second channel of the potential defect of interest locations.
A system for finding defects on silicon wafers uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern (Pattern of Interest or POI) and a known defect (Defect of Interest or DOI) that appears near or inside that pattern. The system captures a first image of the POI using the inspection tool's first channel and a second image of the DOI using the inspection tool's second channel. The system searches the wafer (or another wafer) for areas that look like the POI, calling these "target candidates." A computer then looks for the DOI in these target candidates. It finds possible DOI locations using the first channel's images of the target candidates. Then, it uses specific detection parameters on images from at least the second channel to confirm the DOI at those locations.
2. The system of claim 1 , wherein the known defect of interest is a defect that occurs repeatedly in certain patterns on the wafer.
The defect detection system described above identifies defects that appear repeatedly in specific patterns on the wafer. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the repeating defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect.
3. The system of claim 1 , wherein the known defect of interest is a systematic defect.
The defect detection system described above identifies systematic defects, meaning defects that occur due to a flaw in the manufacturing process. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known systematic defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the systematic defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect.
4. The system of claim 1 , wherein the inspection subsystem is further configured as an electron beam inspection subsystem.
The defect detection system described above uses an electron beam inspection system as the inspection tool to acquire images. Specifically, the system uses an electron beam inspection system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect, where all images are acquired via electron beams.
5. The system of claim 1 , wherein the inspection subsystem is further configured as an electron beam inspection subsystem, and wherein the electron beam inspection subsystem collects images of the wafer in multiple modes.
The defect detection system described above uses an electron beam inspection system that can capture images in multiple modes as the inspection tool. Specifically, the system uses a multi-mode electron beam inspection system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect, where all images are acquired via electron beams in different modes.
6. The system of claim 1 , wherein the inspection subsystem is further configured as an electron beam review subsystem.
The defect detection system described above uses an electron beam review system as the inspection tool to acquire images. Specifically, the system uses an electron beam review system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect, where all images are acquired via electron beams.
7. The system of claim 1 , wherein the inspection subsystem is further configured as an electron beam review subsystem, and wherein the electron beam review subsystem collects images of the wafer in multiple modes.
The defect detection system described above uses an electron beam review system that can capture images in multiple modes as the inspection tool. Specifically, the system uses a multi-mode electron beam review system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect, where all images are acquired via electron beams in different modes.
8. The system of claim 1 , wherein the inspection subsystem comprises an imaging detector configured to detect light reflected from the wafer and to generate an image that is responsive to the reflected light detected by the detector.
The defect detection system described above uses an imaging detector in the inspection tool to detect light reflected from the wafer and create a corresponding image. Specifically, the system uses an inspection tool with an imaging detector that captures reflected light to create an image. This tool has at least two channels to collect information about a "target" area with a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect, where the images are generated from reflected light.
9. The system of claim 1 , wherein the inspection subsystem is further configured as a bright field inspection subsystem.
The defect detection system described above uses a bright field inspection system as the inspection tool. Specifically, the system uses a bright field inspection system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect that appears near or inside that pattern. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern using bright field illumination. A computer then looks for the defect in these areas, using the first channel's images to find possible defect locations and then detection parameters applied to at least the second channel's images to confirm the defect.
10. The system of claim 1 , wherein the images of the target candidates acquired by the first channel comprise optical images, and wherein the computer system is further configured for identifying the potential defect of interest locations by correlating scanning electron microscope images of the known defect of interest to the optical images of the wafer.
In the defect detection system, the images of potential defect locations acquired by the first channel are optical images. The computer system compares these optical images with scanning electron microscope (SEM) images of the known defect to identify likely defect locations. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first *optical* image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern using optical images. A computer correlates SEM images of the known defect to the optical images to find defect locations and then uses detection parameters applied to at least the second channel's images to confirm the defect.
11. The system of claim 1 , wherein a location of the known defect of interest on the wafer is obtained based on optical images of the wafer.
The location of the known defect on the wafer is determined using optical images of the wafer. The defect detection system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. *The initial location of the known defect is determined from optical images*. The system searches for areas that look like the repeating pattern. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
12. The system of claim 1 , wherein optical patch images are used as templates for the target.
The defect detection system uses small "patch" images taken with an optical microscope as templates for the target area. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area, where *optical patch images are used as templates for the target*. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
13. The system of claim 1 , wherein optical patch images are used to search for the target candidates.
The defect detection system uses small "patch" images taken with an optical microscope to find the target candidate areas. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. *The system searches for areas that look like the repeating pattern using optical patch images*. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
14. The system of claim 1 , wherein the computer system is further configured for determining one or more parameters of a care area for the wafer based on results of searching for the target candidates.
The defect detection system determines parameters for a "care area" (a region needing closer inspection) on the wafer based on where the target candidates are found. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. *The computer then determines parameters for a "care area" based on the locations of these found areas*. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
15. The system of claim 1 , wherein the inspection subsystem is further configured to search for the target candidates using a bright field mode of the inspection subsystem.
The defect detection system searches for target candidates using a bright field mode of the inspection system. Specifically, the system uses a bright field inspection system with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. *The system searches for areas that look like the repeating pattern using the bright field mode*. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
16. The system of claim 1 , wherein the computer system is further configured to define a micro care area based on locations of the target candidates identified by searching for the target candidates.
The defect detection system defines a small "micro care area" based on the locations of the target candidates that were identified during the search. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. *The computer then defines a micro care area based on the locations of these target candidate areas*. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
17. The system of claim 1 , wherein the inspection subsystem is further configured for separate and simultaneous bright field and dark field collection.
The inspection subsystem simultaneously collects bright field and dark field images separately. Specifically, the system uses an inspection tool with at least two channels to collect information about a "target" area. This target has a repeating pattern and a known defect. *The inspection subsystem simultaneously collects bright field and dark field images separately*. The system captures a first image of the repeating pattern using the first channel and a second image of the known defect using the second channel. The system searches for areas that look like the repeating pattern. A computer then looks for the defect, using the first channel's images to find possible defect locations and detection parameters applied to at least the second channel's images to confirm the defect.
Unknown
December 19, 2017
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.