A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method of producing a semiconductor device, comprising: providing a carrier structure comprising a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, wherein the precursor substance comprises aluminum; patterning the aluminum to produce a matrix structure area and a contact area; treating the precursor substance by selectively applying a voltage to the matrix structure area for producing a porous matrix structure of aluminum oxide by anodic oxidation while the contact area is not oxidized; introducing a functionalization substance into the porous matrix structure.
This invention relates to semiconductor device fabrication, specifically a method for creating a functionalized porous aluminum oxide matrix structure on a semiconductor substrate. The process begins with a carrier structure comprising a semiconductor substrate. A precursor substance containing aluminum is applied or introduced onto or into the carrier structure. The aluminum is then patterned to define distinct regions: a matrix structure area and a contact area. The precursor substance in the matrix structure area is subjected to anodic oxidation by selectively applying a voltage, converting the aluminum into a porous aluminum oxide matrix while leaving the contact area unoxidized. Finally, a functionalization substance is introduced into the porous matrix structure, enabling the integration of desired properties or functionalities into the semiconductor device. This method allows for precise control over the formation of porous aluminum oxide structures, which can be tailored for applications such as sensors, filters, or catalytic surfaces in semiconductor devices. The selective oxidation and functionalization steps ensure that the contact area remains conductive, while the porous matrix provides a high-surface-area platform for further modifications.
2. The method as claimed in claim 1 , the method comprising applying a passivation layer following application of the precursor substance and prior to treating of the precursor substance, the precursor substance being partly covered by the passivation layer applied.
This invention relates to a method for treating a precursor substance, particularly in semiconductor or materials processing, where the precursor substance is partially covered by a passivation layer before undergoing further treatment. The method addresses challenges in controlling the treatment process, such as ensuring uniform exposure or selective modification of the precursor substance. By applying a passivation layer over part of the precursor substance before treatment, the method enables targeted exposure or protection of specific regions, improving precision in material modification. The passivation layer acts as a barrier, preventing unwanted reactions or interactions in covered areas while allowing treatment to proceed in exposed regions. This approach is useful in applications like semiconductor fabrication, where selective doping, etching, or deposition is required. The method ensures that only the intended portions of the precursor substance are treated, enhancing process control and yield. The passivation layer can be applied using techniques such as chemical vapor deposition, physical vapor deposition, or spin coating, depending on the material and process requirements. The treatment step may involve thermal, chemical, or plasma-based processes to modify the precursor substance. This method improves the reliability and efficiency of material processing by minimizing unintended modifications and optimizing the treatment outcome.
3. The method as claimed in claim 1 , wherein the precursor substance is applied onto the semiconductor substrate, an oxide layer of the carrier structure, a nitride layer of the carrier structure, or a semiconductor layer of the carrier structure.
This invention relates to semiconductor manufacturing, specifically to methods of applying precursor substances during fabrication processes. The problem addressed is the precise and controlled application of precursor substances onto various surfaces of semiconductor substrates and carrier structures to enhance material deposition or modification. The method involves applying a precursor substance onto a semiconductor substrate, an oxide layer of a carrier structure, a nitride layer of a carrier structure, or a semiconductor layer of a carrier structure. The precursor substance may be a chemical compound or material that reacts or interacts with the underlying surface to form a desired layer or modify the surface properties. The application process ensures uniform coverage and controlled thickness, which is critical for semiconductor device performance. The precursor substance can be applied using techniques such as chemical vapor deposition, atomic layer deposition, or spin coating, depending on the specific requirements of the semiconductor fabrication process. This method improves the quality and consistency of semiconductor devices by ensuring precise material deposition on different types of layers, including oxide, nitride, and semiconductor layers, which are common in advanced semiconductor structures. The invention is particularly useful in the fabrication of transistors, memory devices, and other semiconductor components where surface uniformity and material properties are critical.
4. The method as claimed in claim 1 , wherein the functionalization substance is based on a triphenylmethane dye, an azo dye, a stilbene dye, ORMOCER®s, a quaternary ammonium compound, or a metal complex.
This invention relates to a method for functionalizing surfaces, particularly for enhancing properties such as antimicrobial activity, hydrophobicity, or chemical resistance. The method involves applying a functionalization substance to a surface to modify its characteristics. The functionalization substance can be based on various chemical compounds, including triphenylmethane dyes, azo dyes, stilbene dyes, ORMOCER®s (organically modified ceramics), quaternary ammonium compounds, or metal complexes. These substances are selected for their ability to impart specific functional properties to the treated surface. Triphenylmethane dyes, azo dyes, and stilbene dyes are known for their coloration and potential antimicrobial effects, while ORMOCER®s provide hybrid organic-inorganic properties for enhanced durability. Quaternary ammonium compounds are effective antimicrobial agents, and metal complexes can offer catalytic or binding functionalities. The method ensures that the chosen substance adheres to the surface, creating a stable and long-lasting modification. This approach is useful in applications such as medical devices, coatings, textiles, and industrial materials where surface functionality is critical. The invention addresses the need for versatile, chemically stable surface treatments that can be tailored to different performance requirements.
5. A method of producing a semiconductor device, comprising: providing a carrier structure comprising a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure; treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure, wherein the functionalization substance is configured to perform bonding with a further porous matrix structure, said further porous matrix structure also being loaded with the functionalization substance.
This invention relates to semiconductor device fabrication, specifically methods for creating porous matrix structures with functionalization for bonding. The technology addresses challenges in integrating porous materials into semiconductor devices, particularly in achieving strong and reliable bonding between porous structures. The method involves providing a carrier structure with a semiconductor substrate. A precursor substance is applied or introduced onto or into this carrier structure. The precursor substance is then treated to form a porous matrix structure. This porous matrix is subsequently loaded with a functionalization substance designed to enable bonding with another porous matrix structure that is also loaded with the same or a compatible functionalization substance. The functionalization substance facilitates chemical or physical bonding between the porous matrices, enhancing structural integrity and enabling the creation of complex semiconductor devices with integrated porous materials. The porous matrix structure can be formed through various treatment processes, such as chemical etching, thermal decomposition, or solvent extraction, depending on the precursor substance used. The functionalization substance may include reactive groups or molecules that promote adhesion, such as silanes, polymers, or other bonding agents. This approach allows for the precise control of material properties and bonding strength, making it suitable for applications in advanced semiconductor packaging, sensors, or energy storage devices. The method ensures compatibility with existing semiconductor manufacturing processes while introducing new functionalities through porous matrix integration.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 19, 2018
December 31, 2019
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.