A gas supply unit includes a base plate, a plurality of gas supply regions protruding from the base plate and arranged on the base plate in a circumferential direction, and a plurality of sidewall trenches alternating with the gas supply regions on the base plate. A distance between opposing surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, so each of the plurality of sidewall trenches has a depth that decreases in the radial direction from the center of the base plate.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A gas supply unit, comprising: a base plate having first and second surfaces opposite to each other; a plurality of gas supply regions protruding from the first surface of the base plate, the plurality of gas supply regions being arranged on the base plate in a circumferential direction; and a plurality of sidewall trenches on the first surface of the base plate and defined by facing sidewalls of adjacent gas supply regions of the plurality of gas supply regions, wherein a distance between the first and second surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, such that each of the plurality of sidewall trenches has a depth that decreases in the radial direction from the center of the base plate.
This invention relates to a gas supply unit designed for semiconductor processing or similar applications where uniform gas distribution is critical. The unit addresses the problem of uneven gas flow in conventional designs, which can lead to inconsistencies in processes like chemical vapor deposition or etching. The gas supply unit features a base plate with two opposing surfaces. On one surface, multiple gas supply regions protrude and are arranged in a circular pattern around a central point. These regions are separated by sidewall trenches, which are defined by the facing sidewalls of adjacent gas supply regions. The base plate's thickness varies in a radial direction from the center, causing the depth of each sidewall trench to decrease as the distance from the center increases. This tapered design ensures that gas flow resistance is balanced across the unit, promoting uniform distribution. The trenches facilitate gas flow between the supply regions, while the varying depth compensates for pressure differences, enhancing overall performance. The invention improves gas delivery efficiency and consistency in applications requiring precise gas distribution.
2. The gas supply unit as claimed in claim 1 , further comprising a central trench at the center of the base plate, the central trench being connected to the plurality of sidewall trenches, and being surrounded by inner walls of the plurality of gas supply regions which are directed toward the center of the base plate.
This invention relates to a gas supply unit for semiconductor processing, specifically addressing the challenge of uniform gas distribution across a substrate surface. The unit includes a base plate with multiple gas supply regions, each containing a trench along its sidewall to deliver gas. The sidewall trenches are connected to a central trench located at the center of the base plate. The inner walls of the gas supply regions are oriented toward the center, facilitating gas flow from the sidewall trenches into the central trench. This design ensures balanced gas distribution, preventing localized depletion or excess, which is critical for processes like chemical vapor deposition or etching. The central trench acts as a collection point, allowing efficient gas management and pressure regulation. The interconnected trench system minimizes flow resistance while maintaining uniform delivery across the entire substrate area. This configuration improves process consistency and yield in semiconductor manufacturing by eliminating gas distribution-related defects. The invention is particularly useful in applications requiring precise gas flow control, such as advanced semiconductor fabrication.
3. The gas supply unit as claimed in claim 2 , wherein a first through port, which penetrates the base plate, is in the central trench.
Technical Summary: This invention relates to a gas supply unit designed for semiconductor manufacturing or similar applications where precise gas distribution is critical. The unit addresses the challenge of efficiently delivering gases to a processing chamber while maintaining uniform flow and minimizing contamination. The gas supply unit includes a base plate with a central trench that houses a first through port. This through port penetrates the base plate, allowing gas to flow vertically through the structure. The central trench provides a recessed channel for the through port, which may enhance gas flow stability or facilitate integration with other components. The base plate likely serves as a mounting or distribution platform, ensuring gases are delivered uniformly to downstream processes. The through port's placement in the central trench suggests it may be part of a multi-port system, where additional ports could be arranged around the central trench for balanced gas distribution. The design may also include sealing mechanisms to prevent leaks or cross-contamination between different gas flows. The unit could be used in applications such as chemical vapor deposition, etching, or other semiconductor fabrication processes where precise gas control is essential. The invention improves upon existing gas supply systems by optimizing the layout of through ports within the base plate, potentially reducing dead zones and improving flow dynamics. The central trench may also simplify assembly or maintenance by providing clear access to the through port.
4. The gas supply unit as claimed in claim 3 , further comprising a first gas discharge pump connected to the first through port.
A gas supply unit is designed for precise control of gas flow in semiconductor manufacturing or other high-precision applications. The unit addresses challenges in maintaining stable gas pressure and flow rates, which are critical for processes like chemical vapor deposition or etching. The system includes a gas source, a pressure regulator, and a flow controller to deliver gas to a processing chamber. A key feature is a through port that allows gas to bypass the primary flow path, enabling rapid adjustments or purging. This claim adds a first gas discharge pump connected to the through port. The pump actively removes gas from the through port, enhancing system responsiveness and preventing backflow. This ensures accurate pressure control and minimizes contamination risks. The discharge pump may be a vacuum pump or a mechanical pump, depending on the application. The through port and discharge pump work together to maintain system integrity during transitions between different gas states or when purging the system. This configuration improves process efficiency and reliability in semiconductor fabrication, where even minor fluctuations can affect yield. The system may also include additional pumps, valves, or sensors to further refine gas handling.
5. The gas supply unit as claimed in claim 1 , wherein: the plurality of gas supply regions include respective lower surfaces facing away from the first surface of the base plate, each of the plurality of sidewall trenches has a first depth positioned adjacent to the center of the base plate, and a second depth positioned adjacent to an edge of the base plate, the first and second depths being measured from the first surface of the base plate to a lower surface of an adjacent gas supply region of the plurality of gas supply regions, and a ratio between the first depth and the second depth is about 4:1 to about 6:1.
This invention relates to a gas supply unit for semiconductor processing, specifically addressing uniform gas distribution across a substrate. The unit includes a base plate with a first surface and a plurality of gas supply regions. Each gas supply region has a lower surface facing away from the base plate's first surface. The unit also features sidewall trenches that vary in depth from the center to the edge of the base plate. The trenches have a first depth near the center and a second depth near the edge, both measured from the base plate's first surface to the lower surface of an adjacent gas supply region. The ratio of the first depth to the second depth is between 4:1 and 6:1. This depth variation ensures consistent gas flow and pressure distribution, preventing uneven deposition or etching on the substrate. The design improves process uniformity by compensating for gas flow resistance differences across the substrate surface. The gas supply regions and trenches are arranged to optimize gas delivery while maintaining structural integrity. The invention is particularly useful in semiconductor manufacturing where precise gas distribution is critical for yield and performance.
6. The gas supply unit as claimed in claim 1 , wherein the plurality of gas supply regions includes first to fourth gas supply regions, which are sequentially disposed in the circumferential direction, so as to be spaced apart from each other.
This invention relates to a gas supply unit designed for semiconductor manufacturing or other precision applications where uniform gas distribution is critical. The problem addressed is ensuring consistent gas flow across a substrate or reaction chamber, avoiding uneven deposition or processing due to localized gas concentration variations. The gas supply unit includes multiple gas supply regions arranged in a circular pattern around a central axis. These regions are spaced apart in the circumferential direction to prevent interference between adjacent gas flows. Specifically, the unit features four distinct gas supply regions—first, second, third, and fourth—positioned sequentially around the circumference. Each region delivers gas independently, allowing precise control over flow distribution. The spacing between regions ensures that gas streams do not merge prematurely, maintaining uniform delivery across the target area. This design is particularly useful in applications requiring radial symmetry, such as chemical vapor deposition (CVD) or etching processes, where uniform gas exposure is essential for consistent results. The modular arrangement of the supply regions also allows for easy adjustment or replacement of individual components without disrupting the entire system.
7. The gas supply unit as claimed in claim 6 , wherein an area ratio between the first gas supply region and the third gas supply region is about 1:1.4 to about 1:2.
This invention relates to a gas supply unit for semiconductor processing, specifically addressing the challenge of optimizing gas flow distribution in a plasma processing chamber. The unit includes multiple gas supply regions to improve uniformity and efficiency in gas delivery. The first gas supply region is positioned at a central location, while the second and third gas supply regions are arranged around it. The second gas supply region is configured to supply a gas with a flow rate that is about 1.2 to about 1.5 times that of the first gas supply region. The third gas supply region is designed to supply a gas with a flow rate that is about 1.4 to about 2 times that of the first gas supply region. The area ratio between the first and third gas supply regions is maintained within a range of about 1:1.4 to about 1:2 to ensure balanced gas distribution. This configuration enhances process uniformity by controlling gas flow rates and spatial distribution, reducing variations in plasma density and improving semiconductor fabrication consistency. The invention is particularly useful in plasma etching and deposition systems where precise gas delivery is critical.
8. A thin film deposition apparatus, comprising: a body with an accommodating groove therein; a rotatable susceptor in the accommodating groove, the rotatable susceptor supporting a plurality of substrates; and a gas supply unit coupled to an upper portion of the body, the gas supply unit facing the rotatable susceptor to inject a plurality of gases toward the susceptor, wherein the gas supply unit includes: a base plate having first and second surfaces opposite to each other, a plurality of gas supply regions protruding from the first surface of the base plate, the plurality of gas supply regions being arranged on the base plate in a circumferential direction, and a plurality of sidewall trenches on the first surface of the base plate and defined by facing sidewalls of adjacent gas supply regions of the plurality of gas supply regions, wherein a distance between the first and second surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, such that each of the plurality of sidewall trenches has a depth that decreases in the radial direction from the center of the base plate.
This invention relates to a thin film deposition apparatus designed to improve uniformity in gas distribution during the deposition process. The apparatus addresses the challenge of achieving consistent thin film thickness across multiple substrates, which is critical in semiconductor and display manufacturing. The apparatus includes a body with an accommodating groove housing a rotatable susceptor that supports multiple substrates. A gas supply unit is coupled to the upper portion of the body, positioned to inject gases toward the susceptor. The gas supply unit features a base plate with first and second opposing surfaces. Multiple gas supply regions protrude from the first surface and are arranged circumferentially around the base plate. Sidewall trenches are formed between adjacent gas supply regions, with the depth of these trenches decreasing radially outward from the center of the base plate. This design ensures that gas flow is evenly distributed across the susceptor, enhancing deposition uniformity. The rotatable susceptor allows for continuous processing of multiple substrates, improving efficiency. The apparatus is particularly useful in applications requiring precise thin film deposition, such as semiconductor wafer processing and display panel manufacturing.
9. The thin film deposition apparatus as claimed in claim 8 , further comprising: a central trench at the center of the base plate and connected to the plurality of sidewall trenches, the central trench being surrounded by inner walls of the plurality of gas supply regions which are directed toward the center of the base plate, wherein a first through port, which penetrates the base plate, is in the central trench.
A thin film deposition apparatus is designed to improve uniformity and efficiency in the deposition process. The apparatus includes a base plate with multiple gas supply regions arranged around its center. Each gas supply region has a sidewall trench that distributes gas evenly across the substrate. A central trench is located at the center of the base plate and connects to the sidewall trenches, allowing gas to flow from the outer regions toward the center. The central trench is surrounded by inner walls of the gas supply regions, which direct gas flow inward. A first through port penetrates the base plate within the central trench, enabling gas exhaust or additional gas introduction. This design ensures balanced gas distribution, reducing deposition variability and enhancing film uniformity. The apparatus is particularly useful in semiconductor manufacturing, where precise control of thin film deposition is critical for device performance. The central trench and through port improve gas flow management, addressing issues like uneven deposition and wasteful gas consumption. The configuration of the gas supply regions and trenches optimizes gas delivery, ensuring consistent film thickness and quality across the substrate.
10. The thin film deposition apparatus as claimed in claim 9 , further comprising a first gas discharge pump connected to the first through port.
A thin film deposition apparatus is designed to deposit thin films onto substrates with high precision and uniformity. The apparatus addresses challenges in conventional systems, such as uneven film thickness, poor adhesion, and contamination, by incorporating advanced control mechanisms and gas handling systems. The apparatus includes a deposition chamber, a substrate holder, and a gas supply system that delivers precursor gases to the chamber. A first through port is integrated into the chamber to facilitate gas flow and pressure regulation. Additionally, a first gas discharge pump is connected to the first through port to actively remove excess or unwanted gases from the chamber, ensuring a controlled deposition environment. This pump helps maintain optimal pressure levels and prevents contamination, improving film quality and deposition efficiency. The apparatus may also include additional components, such as heating elements, plasma sources, or monitoring systems, to further enhance deposition accuracy and reproducibility. The integration of the gas discharge pump with the through port ensures efficient gas management, reducing waste and improving process stability. This design is particularly useful in semiconductor manufacturing, optical coating, and other applications requiring high-precision thin film deposition.
11. The thin film deposition apparatus as claimed in claim 8 , wherein: each of the plurality of sidewall trenches has a first depth positioned adjacent to the center of the base plate, and a second depth positioned adjacent to an edge of the base plate, and a ratio between the first depth and the second depth is about 4:1 to about 6:1.
This invention relates to a thin film deposition apparatus designed to improve uniformity in film thickness during deposition processes. The apparatus includes a base plate with a plurality of sidewall trenches that guide gas flow to enhance deposition uniformity. Each trench has a variable depth profile, with a first depth near the center of the base plate and a second depth near the edge. The ratio between the first and second depths is controlled within a range of approximately 4:1 to 6:1. This depth variation helps regulate gas flow dynamics, ensuring consistent material distribution across the substrate. The apparatus may also include a gas supply system to deliver precursor gases into the trenches, where they react or deposit onto the substrate. The design addresses challenges in conventional deposition systems where uneven gas flow leads to thickness variations in the deposited film, particularly in large-area or high-precision applications. By optimizing the trench depth ratio, the apparatus achieves improved uniformity, reducing defects and enhancing product yield in semiconductor or display manufacturing. The invention is particularly useful in chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes where precise film thickness control is critical.
12. The thin film deposition apparatus as claimed in claim 8 , wherein: the plurality of gas supply regions includes first to fourth gas supply regions which are sequentially disposed in the circumferential direction so as to be spaced apart from each other, and inject first to fourth gases, respectively, and an area ratio between the first gas supply region and the third gas supply region is 1:1.4 to 1:2.
This invention relates to a thin film deposition apparatus designed to improve uniformity and control in the deposition process. The apparatus addresses the challenge of achieving consistent film thickness and composition across a substrate by precisely managing gas flow and distribution during deposition. The apparatus includes multiple gas supply regions arranged circumferentially around a deposition chamber, each supplying a different gas to form a thin film. Specifically, the apparatus features first to fourth gas supply regions sequentially spaced apart in the circumferential direction, each injecting distinct gases. The first and third gas supply regions have an area ratio of 1:1.4 to 1:2, which optimizes gas flow dynamics to enhance deposition uniformity. The second and fourth gas supply regions are similarly configured to ensure balanced gas distribution. This design allows for precise control over gas injection rates and spatial distribution, resulting in improved film quality and reduced defects. The apparatus is particularly useful in semiconductor manufacturing and other applications requiring high-precision thin film deposition.
13. The thin film deposition apparatus as claimed in claim 12 , wherein the first gas is a source gas, the second gas and the fourth gas are purge gases, and the third gas is a reactant gas to react with the source gas.
A thin film deposition apparatus is designed to deposit thin films on substrates through a cyclic process involving multiple gases. The apparatus includes a reaction chamber, a substrate holder, and a gas supply system configured to introduce four distinct gases sequentially. The first gas is a source gas that provides the material to be deposited, while the third gas is a reactant gas that chemically reacts with the source gas to form the desired thin film. The second and fourth gases are purge gases used to remove excess source gas and reaction byproducts between deposition cycles. The gas supply system is controlled to alternate the introduction of these gases in a precise sequence, ensuring that the source gas and reactant gas interact only at the substrate surface, minimizing unwanted reactions in the gas phase. This method improves film uniformity and reduces impurities. The apparatus may also include heating elements to control the substrate temperature, enhancing the reaction efficiency and film quality. The system is particularly useful in atomic layer deposition (ALD) processes, where precise control over gas introduction and purging is critical for achieving high-quality thin films with atomic-level thickness control.
14. The thin film deposition apparatus as claimed in claim 13 , wherein the first gas includes Zr, and the third gas includes at least one of O 3 , O 2 , and H 2 O.
A thin film deposition apparatus is designed for depositing zirconium-based thin films, addressing challenges in achieving precise control over film composition and uniformity. The apparatus includes a deposition chamber with multiple gas inlets for introducing reactive gases. A first gas containing zirconium (Zr) is supplied to the chamber, while a third gas, which may include ozone (O3), oxygen (O2), or water vapor (H2O), is introduced to react with the zirconium. The apparatus also features a substrate holder for positioning a target substrate and a plasma generation unit to enhance gas reactivity. The system may further include a second gas inlet for additional reactive or inert gases to modify film properties. The apparatus ensures uniform deposition by controlling gas flow rates, pressure, and plasma conditions, enabling the formation of high-quality zirconium oxide or hydroxide films for applications in electronics, optics, or corrosion-resistant coatings. The use of multiple reactive gases allows fine-tuning of film stoichiometry and microstructure.
15. The thin film deposition apparatus as claimed in claim 8 , further comprising: an outer peripheral trench which is connected with the plurality of sidewall trenches, and formed in the circumferential direction so as to be adjacent to an edge of the base plate, wherein a plurality of gas discharge ports, which penetrates the accommodating groove, is formed in the accommodating groove so as to face the outer peripheral trench.
This invention relates to a thin film deposition apparatus designed to improve gas flow and uniformity during deposition processes. The apparatus addresses the problem of uneven gas distribution and poor film quality in conventional systems, particularly near the edges of the substrate. The apparatus includes a base plate with an accommodating groove that holds a substrate. A plurality of sidewall trenches are formed along the inner walls of the accommodating groove to facilitate gas flow and pressure equalization. Additionally, an outer peripheral trench is formed around the edge of the base plate, connected to the sidewall trenches, to further enhance gas distribution. The accommodating groove contains multiple gas discharge ports that direct gas toward the outer peripheral trench, ensuring uniform gas flow across the substrate surface. This design minimizes edge effects and improves film deposition uniformity, making it suitable for high-precision applications such as semiconductor manufacturing. The apparatus ensures consistent gas pressure and flow, leading to better film quality and reduced defects.
16. A gas supply unit, comprising: a base plate having first and second surfaces opposite to each other; a plurality of gas supply regions protruding from the first surface of the base plate, the plurality of gas supply regions being arranged on the base plate in a circumferential direction; and a plurality of sidewall trenches on the first surface of the base plate, the plurality of sidewall trenches and the plurality of gas supply regions being alternately arranged along the circumferential direction of the base plate, wherein a distance between the first and second surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, such that each of the plurality of sidewall trenches has a decreasing depth in the radial direction from the center of the base plate toward an edge of the base plate.
A gas supply unit is designed to distribute gas uniformly across a substrate, addressing issues of uneven gas flow in semiconductor processing or similar applications. The unit includes a base plate with opposing first and second surfaces. Multiple gas supply regions protrude from the first surface and are arranged circumferentially around the base plate. Between these regions, sidewall trenches are formed, also arranged in a circumferential pattern. The base plate thickness varies radially, increasing from the center outward, causing the sidewall trenches to have a decreasing depth as they extend from the center toward the edge of the base plate. This tapered trench design ensures consistent gas flow distribution by compensating for pressure variations that occur at different radial distances from the center. The alternating arrangement of gas supply regions and sidewall trenches optimizes gas delivery, preventing localized depletion or excess flow. The unit's structure enhances uniformity in processes like chemical vapor deposition or etching, where precise gas distribution is critical. The radial thickness variation of the base plate ensures that gas pressure remains balanced across the entire substrate area, improving process consistency and yield.
17. The gas supply unit as claimed in claim 16 , further comprising a central trench at the center of the base plate, and a peripheral trench around an edge of the base plate, the central trench and the peripheral trench being in fluid communication with each of the plurality of sidewall trenches.
This invention relates to a gas supply unit designed for semiconductor processing or similar applications, addressing the challenge of uniformly distributing process gases across a substrate. The unit includes a base plate with a network of trenches to deliver gas to a substrate surface. The base plate has a central trench at its center and a peripheral trench along its edge, both connected to multiple sidewall trenches. These trenches ensure even gas distribution by allowing gas to flow from a central source outward to the edges, preventing localized depletion or overconcentration. The sidewall trenches further enhance uniformity by providing additional pathways for gas flow. This design minimizes pressure variations and improves process consistency, which is critical for applications like chemical vapor deposition or etching where uniform gas delivery is essential. The interconnected trench system ensures that gas reaches all areas of the substrate simultaneously, reducing defects and improving yield in manufacturing processes. The invention focuses on optimizing gas flow dynamics to enhance performance in semiconductor fabrication and related industries.
18. The gas supply unit as claimed in claim 17 , wherein the decreasing depth of each of the plurality of sidewall trenches is continuous from the central trench to the peripheral trench.
This invention relates to a gas supply unit designed for semiconductor manufacturing, particularly for controlling gas flow distribution in a processing chamber. The problem addressed is uneven gas flow, which can lead to inconsistent processing results. The gas supply unit includes a base plate with a central trench and a peripheral trench, connected by a plurality of sidewall trenches. The sidewall trenches have a decreasing depth from the central trench to the peripheral trench, ensuring a continuous depth transition. This design promotes uniform gas flow distribution across the processing area, improving process uniformity and yield. The central trench supplies gas, which flows through the sidewall trenches to the peripheral trench, where it is distributed evenly. The continuous depth gradient prevents abrupt changes in flow resistance, enhancing stability. The unit may also include a gas inlet connected to the central trench and a gas outlet connected to the peripheral trench, facilitating controlled gas circulation. The invention is particularly useful in chemical vapor deposition (CVD) and etching processes where precise gas distribution is critical. The continuous depth profile of the sidewall trenches ensures smooth gas flow transitions, reducing turbulence and improving process consistency.
19. The gas supply unit as claimed in claim 16 , wherein each of the plurality of sidewall trenches is continuous from the center of the base plate toward an edge of the base plate, the depth of the each of the plurality of sidewall trenches being measured from the first surface of the base plate to a surface of an adjacent gas supply region of the plurality of gas supply regions that faces away from the first surface of the base plate.
A gas supply unit for semiconductor processing includes a base plate with a first surface and a second surface opposite the first surface. The base plate has a plurality of gas supply regions and a plurality of sidewall trenches. Each sidewall trench is continuous from the center of the base plate toward an edge of the base plate. The depth of each sidewall trench is measured from the first surface of the base plate to a surface of an adjacent gas supply region that faces away from the first surface. The gas supply regions are configured to distribute gas uniformly across a substrate during processing, such as chemical vapor deposition or etching. The sidewall trenches enhance gas flow and pressure distribution, preventing uneven deposition or etching. The design ensures consistent gas delivery, improving process uniformity and yield. The base plate may also include a central gas inlet and channels connecting the gas supply regions to the inlet, facilitating efficient gas distribution. The trenches and gas supply regions are arranged to minimize dead zones and turbulence, optimizing gas flow dynamics. This configuration is particularly useful in semiconductor manufacturing where precise gas control is critical for high-quality device fabrication.
20. The gas supply unit as claimed in claim 16 , wherein, in each of the plurality of gas supply regions, a surface in direct contact with the first surface of the base plate and a surface facing away from the first surface of the base plate have a same shape.
This invention relates to a gas supply unit designed for semiconductor manufacturing or similar applications, addressing the challenge of uniform gas distribution across a substrate. The unit includes a base plate with a first surface and a plurality of gas supply regions positioned on this surface. Each gas supply region is structured to deliver gas to a substrate, ensuring consistent flow and pressure distribution. A key feature is that within each gas supply region, the surface in direct contact with the base plate and the opposing surface (facing away from the base plate) have identical shapes. This symmetry ensures uniform gas flow characteristics, preventing uneven distribution that could lead to defects in processes like chemical vapor deposition or etching. The design may also include gas channels or diffusion mechanisms to further enhance uniformity. The invention aims to improve process control and yield in semiconductor fabrication by maintaining precise gas delivery parameters across the entire substrate surface.
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April 12, 2017
January 7, 2020
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