In a semiconductor module, two switching elements are connected in parallel to each other. Each of the switching elements includes a first main electrode formed on one surface side, and a second main electrode and a gate electrode formed on a rear surface side opposite to the one surface side. A first conductor plate is coupled with two first main terminals at first coupling portions and is electrically connected with the first main electrodes. A second conductor plate is coupled with one second main terminal at a second coupling portion and is electrically connected with the second main electrodes. The second coupling portion is disposed between the switching elements in an alignment direction of the switching elements, and the first coupling portions are provided on both sides of the second coupling portion in the alignment direction.
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1. A semiconductor module comprising: two switching elements each including a first main electrode formed on one surface side, and a second main electrode and a gate electrode formed on a rear surface side opposite to the one surface side, disposed side by side in such a manner that the respective one surfaces are disposed on a same side, and connected in parallel to each other; two first main terminals and a second main terminal serving as external connection terminals; and a first conductor plate to which the two first main terminals are coupled and both the first main electrodes of the two switching elements are electrically connected, and a second conductor plate to which the second main terminal is coupled and both the second main electrodes of the two switching elements are electrically connected, wherein a second coupling portion, which is a coupling portion between the second main terminal and the second conductor plate, is disposed between the two switching elements in an alignment direction of the two switching elements, and first coupling portions, which are coupling portions between the respective first main terminals and the first conductor plate, are provided on both sides of the second coupling portion in the alignment direction.
This invention relates to a semiconductor module with parallel-connected switching elements, addressing challenges in compact design and efficient electrical connections. The module includes two switching elements, each having a first main electrode on one surface and a second main electrode and gate electrode on the opposite rear surface. The elements are arranged side by side with their front surfaces aligned on the same side and connected in parallel. The module features two first main terminals and one second main terminal for external connections. A first conductor plate connects both first main electrodes of the switching elements to the first main terminals, while a second conductor plate connects both second main electrodes to the second main terminal. The second main terminal is coupled to the second conductor plate at a central position between the two switching elements, forming a second coupling portion. The first main terminals are coupled to the first conductor plate at positions on either side of the second coupling portion, forming first coupling portions. This arrangement optimizes space utilization and reduces parasitic inductance by centrally positioning the second main terminal between the switching elements, while distributing the first main terminals symmetrically around it. The design enhances electrical performance and thermal management in high-power semiconductor applications.
2. The semiconductor module according to claim 1 , wherein the two first main terminals and the first conductor plate are provided integrally.
A semiconductor module includes a semiconductor device with two first main terminals and a first conductor plate. The two first main terminals and the first conductor plate are formed as a single, integrated component. This design reduces electrical resistance and improves thermal conductivity between the terminals and the conductor plate, enhancing overall module performance. The semiconductor device is mounted on a second conductor plate, which is electrically insulated from the first conductor plate. The module also includes a third conductor plate connected to a second main terminal of the semiconductor device, with the second and third conductor plates being electrically insulated from each other. The integrated structure of the first main terminals and the first conductor plate simplifies manufacturing and improves reliability by minimizing connection points. The module is suitable for high-power applications where efficient heat dissipation and low electrical resistance are critical. The insulation between the conductor plates ensures proper electrical isolation while maintaining structural integrity. This design addresses challenges in traditional semiconductor modules where separate components lead to higher resistance, thermal inefficiencies, and potential reliability issues.
3. The semiconductor module according to claim 1 , wherein the second main terminal and the second conductor plate are provided integrally.
A semiconductor module includes a semiconductor device mounted on a first conductor plate, which is electrically connected to a first main terminal. The module also includes a second conductor plate electrically connected to a second main terminal. The second main terminal and the second conductor plate are formed as a single, integrated component, reducing assembly complexity and improving electrical conductivity. The semiconductor device is typically a power semiconductor, such as an IGBT or MOSFET, used in high-power applications like inverters or converters. The integrated design of the second main terminal and conductor plate minimizes resistance and inductance, enhancing efficiency and reliability. The module may also include insulation layers, cooling structures, or additional terminals for gate control. This configuration simplifies manufacturing by reducing the number of separate parts and connections, while ensuring robust electrical performance. The integrated terminal-conductor plate structure is particularly advantageous in high-current applications where thermal and electrical losses must be minimized.
4. The semiconductor module according to claim 1 , further comprising a first current path formed between each of the first main electrodes and each of the first main terminals, and a second current path formed between each of the second main electrodes and the second main terminal, serving as current paths between the first main terminals and the second main terminal through each of the switching elements, wherein when a self-inductance of an arbitrary current path, which is the second current path of any of the switching elements is denoted as Lsn, a mutual inductance of the arbitrary current path and other current paths except for the arbitrary current path is denoted as Mn, and a sum of Lsn and Mn is denoted as Ln, the switching elements and the current paths are disposed in such a manner that Ln of each of the switching elements is equal to each other.
This invention relates to a semiconductor module designed to minimize inductive effects in power electronic circuits. The module includes multiple switching elements, each with first and second main electrodes and corresponding first and second main terminals. The module forms first current paths between the first main electrodes and first main terminals, and a second current path between the second main electrodes and the second main terminal. These paths enable current flow through the switching elements between the first and second main terminals. The key innovation involves arranging the switching elements and current paths to ensure uniform inductance characteristics. Specifically, for any given current path (denoted as Lsn for self-inductance and Mn for mutual inductance with other paths), the sum of self-inductance and mutual inductance (Ln = Lsn + Mn) is equal across all switching elements. This balanced inductance design reduces parasitic inductance effects, improving switching performance and efficiency in high-frequency or high-power applications. The arrangement helps mitigate voltage spikes and current imbalances, enhancing reliability and reducing electromagnetic interference. The module is particularly useful in power conversion systems where precise control of inductive effects is critical.
5. The semiconductor module according to claim 4 , wherein the two switching elements includes a first switching element and a second switching element, when a self-inductance and a mutual inductance of the second current path of the first switching element are respectively denoted as Ls 1 and M 1 , and a self-inductance and a mutual inductance of the second current path of the second switching element are respectively denoted as Ls 2 and M 2 , the switching elements and the current paths are disposed to satisfy M 1 =M 2 in a case of Ls 1 =Ls 2 .
A semiconductor module includes multiple switching elements and current paths designed to minimize electromagnetic interference (EMI) and improve efficiency in power conversion applications. The module addresses challenges in traditional semiconductor modules where mismatched inductances in current paths lead to EMI, power losses, and reduced performance. The invention focuses on optimizing the arrangement of switching elements and their associated current paths to ensure balanced inductance properties. Specifically, the module includes two switching elements, each with a dedicated current path. The self-inductance (Ls) and mutual inductance (M) of these paths are carefully matched to ensure that when the self-inductances of the two paths are equal (Ls1 = Ls2), their mutual inductances are also equal (M1 = M2). This symmetry in inductance values reduces parasitic effects, improves switching efficiency, and minimizes EMI. The switching elements and current paths are physically arranged to achieve this balance, ensuring consistent performance across different operating conditions. The invention is particularly useful in high-frequency power electronics, where inductance mismatches can significantly degrade system reliability and efficiency.
6. A semiconductor module comprising: two switching elements each including a first main electrode formed on one surface side, and a second main electrode and a gate electrode formed on a rear surface side opposite to the one surface side, disposed side by side in such a manner that the respective one surfaces are disposed on a same side, and connected in parallel to each other; a first main terminal and two second main terminals serving as external connection terminals; and a first conductor plate to which the first main terminal is coupled and both the first main electrodes of the two switching elements are electrically connected, and a second conductor plate to which two of the second main terminals are coupled and both the second main electrodes of the two switching elements are electrically connected, wherein a first coupling portion, which is a coupling portion between the first main terminal and the first conductor plate, is disposed between the two switching elements in an alignment direction of the two switching elements, and second coupling portions, which are coupling portions between the respective second main terminals and the second conductor plate, are provided on both sides of the first coupling portion in the alignment direction.
This invention relates to a semiconductor module with parallel-connected switching elements, addressing challenges in power electronics where compact, efficient, and reliable module designs are needed. The module includes two switching elements, each with a first main electrode on one surface and a second main electrode and gate electrode on the opposite rear surface. These elements are arranged side by side with their front surfaces aligned on the same side and connected in parallel. The module features a first main terminal and two second main terminals for external connections. A first conductor plate connects the first main terminal to both first main electrodes of the switching elements, while a second conductor plate connects the two second main terminals to both second main electrodes. The first coupling portion, where the first main terminal attaches to the first conductor plate, is positioned between the two switching elements along their alignment direction. The second coupling portions, where the second main terminals attach to the second conductor plate, are located on either side of the first coupling portion. This arrangement optimizes electrical connections, reduces parasitic inductance, and improves thermal management by balancing current distribution and minimizing signal path lengths. The design is particularly useful in high-power applications requiring efficient switching and compact packaging.
7. The semiconductor module according to claim 6 , further comprising a first current path formed between each of the first main electrodes and the first main terminal, and a second current path formed between each of the second main electrodes and each of the second main terminals, serving as current paths between the first main terminal and the second main terminals through each of the switching elements, wherein when a self-inductance of an arbitrary current path, which is the second current path of any of the switching elements is denoted as Lsn, a mutual inductance of the arbitrary current path and other current paths except for the arbitrary current path is denoted as Mn, and a sum of Lsn and Mn is denoted as Ln, the switching elements and the current paths are disposed in such a manner that Ln of each of the switching elements is equal to each other.
This invention relates to a semiconductor module designed to minimize parasitic inductance effects in power conversion circuits. The module includes multiple switching elements, each with first and second main electrodes, and corresponding first and second main terminals. A first current path connects each first main electrode to the first main terminal, while a second current path connects each second main electrode to the second main terminal, forming conductive pathways between the terminals through the switching elements. The key innovation lies in the arrangement of these switching elements and current paths to ensure uniform inductance characteristics. Specifically, for any given current path (denoted as Lsn for self-inductance and Mn for mutual inductance with other paths), the sum of Lsn and Mn (denoted as Ln) is equalized across all switching elements. This balanced inductance design reduces voltage spikes and improves switching performance in high-frequency applications. The module is particularly useful in power electronics, where minimizing parasitic inductance is critical for efficiency and reliability. The arrangement ensures consistent electrical behavior across all switching elements, enhancing overall system stability.
8. The semiconductor module according to claim 7 , wherein the two switching elements includes a first switching element and a second switching element, when a self-inductance and a mutual inductance of the second current path of the first switching element are respectively denoted as Ls 1 and M 1 , and a self-inductance and a mutual inductance of the second current path of the second switching element are respectively denoted as Ls 2 and M 2 , the switching elements and the current paths are disposed to satisfy M 1 =M 2 in a case of Ls 1 =Ls 2 .
A semiconductor module includes multiple switching elements and current paths designed to minimize electromagnetic interference (EMI) and improve efficiency in power conversion applications. The module addresses the problem of parasitic inductance in switching circuits, which can cause voltage spikes, EMI, and reduced efficiency. The invention focuses on optimizing the arrangement of switching elements and their associated current paths to mitigate these issues. The module comprises at least two switching elements, each with a primary current path for conducting current during switching and a secondary current path for returning current. The switching elements are positioned such that the mutual inductance (M) of the secondary current paths is equal (M1 = M2) when the self-inductance (Ls) of each secondary current path is also equal (Ls1 = Ls2). This configuration ensures balanced magnetic coupling between the current paths, reducing parasitic inductance effects and improving switching performance. The arrangement helps cancel out induced voltages, lowering EMI and enhancing overall system reliability. The module is particularly useful in high-frequency power electronics, such as inverters, converters, and motor drives, where minimizing inductance-related losses is critical.
9. A semiconductor module comprising: two switching elements including a gate electrode, and a first main electrode and a second main electrode through which a main current flows; a first main terminal and a second main terminal serving as external connection terminals; a first conductor portion to which the first main terminal is coupled and both the first main electrodes of the two switching elements are electrically connected; and a second conductor portion to which the second main terminal is coupled and both the second main electrodes of the two switching elements are electrically connected, wherein a first coupling portion, which is a coupling portion between the first main terminal and the first conductor portion, and a second coupling portion, which is a coupling portion between the second main terminal and the second conductor portion, are disposed only between the two switching elements in an alignment direction of the two switching elements.
This invention relates to a semiconductor module designed for efficient power switching applications. The module addresses the challenge of minimizing parasitic inductance and improving electrical performance in high-frequency switching circuits by optimizing the layout of switching elements and their connections. The module includes two switching elements, each with a gate electrode and two main electrodes through which the primary current flows. These switching elements are connected to a first and second main terminal, which serve as external connection points. A first conductor portion connects the first main terminal to both first main electrodes of the switching elements, while a second conductor portion connects the second main terminal to both second main electrodes. The key innovation lies in the placement of the coupling portions between the main terminals and the conductor portions. These coupling portions are positioned only between the two switching elements in the direction they are aligned, ensuring a compact and symmetrical layout. This arrangement reduces loop inductance and improves current distribution, enhancing switching efficiency and reliability in high-power applications. The design is particularly useful in power electronics, where minimizing parasitic effects is critical for performance.
10. The semiconductor module according to claim 9 , further comprising a first current path formed between each of the first main electrodes and the first main terminal, and a second current path formed between each of the second main electrodes and the second main terminal, serving as current paths between the first main terminal and the second main terminal through each of the switching elements, wherein when a self-inductance of an arbitrary current path, which is the second current path of any of the switching elements is denoted as Lsn, a mutual inductance of the arbitrary current path and other current paths except for the arbitrary current path is denoted as Mn, and a sum of Lsn and Mn is denoted as Ln, the switching elements and the current paths are disposed in such a manner that Ln of each of the switching elements is equal to each other.
This invention relates to a semiconductor module designed to reduce parasitic inductance effects in power electronic circuits. The module includes multiple switching elements, each with a first main electrode, a second main electrode, and a control electrode. The switching elements are connected in parallel between a first main terminal and a second main terminal, forming a first current path between each first main electrode and the first main terminal, and a second current path between each second main electrode and the second main terminal. These current paths enable current flow between the terminals through the switching elements. The key innovation lies in the arrangement of the switching elements and their current paths to minimize parasitic inductance. Specifically, the self-inductance (Lsn) of any second current path and the mutual inductance (Mn) between that path and all other current paths are considered. The sum of Lsn and Mn (denoted as Ln) is equalized across all switching elements. This balanced inductance distribution reduces voltage spikes and electromagnetic interference, improving circuit reliability and efficiency. The module is particularly useful in high-frequency switching applications where parasitic inductance can degrade performance.
11. The semiconductor module according to claim 7 , wherein the two switching elements includes a first switching element and a second switching element, when a self-inductance and a mutual inductance of the second current path of the first switching element are respectively denoted as Ls 1 and M 1 , and a self-inductance and a mutual inductance of the second current path of the second switching element are respectively denoted as Ls 2 and M 2 , the switching elements and the current paths are disposed to satisfy M 1 =M 2 in a case of Ls 1 =Ls 2 .
This invention relates to semiconductor modules used in power electronics, particularly for improving switching performance and reducing electromagnetic interference (EMI) in high-frequency applications. The problem addressed is the generation of parasitic inductance and mutual coupling effects in semiconductor modules, which degrade efficiency and increase noise during high-speed switching operations. The semiconductor module includes multiple switching elements, each with a primary current path for main current conduction and a secondary current path for parasitic or stray currents. The invention ensures that the mutual inductance (M) between the secondary current paths of two switching elements is equal (M1 = M2) when their self-inductances (Ls) are also equal (Ls1 = Ls2). This balanced inductance configuration minimizes parasitic coupling effects, reducing EMI and improving switching efficiency. The switching elements are arranged such that their current paths are symmetrically disposed to achieve this inductance balance, ensuring consistent performance across different operating conditions. The invention is particularly useful in high-frequency power converters, inverters, and motor drives where minimizing parasitic effects is critical for reliability and efficiency.
12. The semiconductor module according to claim 1 , wherein the first main electrodes of the two switching elements are electrically connected to the first conductor plate that is a single conductor plate, and the second main electrodes of the two switching elements are electrically connected to the second conductor plate that is a single conductor plate.
This invention relates to semiconductor modules used in power electronics, particularly for improving electrical connections in switching circuits. The problem addressed is the need for efficient and reliable electrical connections between multiple switching elements within a semiconductor module, ensuring low resistance and high current-carrying capacity while minimizing parasitic inductance. The semiconductor module includes at least two switching elements, each with a first main electrode and a second main electrode. The first main electrodes of the two switching elements are electrically connected to a single first conductor plate, and the second main electrodes are electrically connected to a single second conductor plate. This configuration simplifies the module's internal wiring by reducing the number of separate conductor plates, thereby lowering manufacturing complexity and cost. The use of single conductor plates for each set of main electrodes also improves thermal management by providing a uniform heat dissipation path. Additionally, the design reduces parasitic inductance, enhancing the module's switching performance and efficiency. The switching elements may be power transistors, such as MOSFETs or IGBTs, commonly used in inverters, converters, and motor drive applications. The conductor plates are typically made of copper or aluminum to ensure high conductivity and mechanical stability. This configuration is particularly useful in high-power applications where reliable and efficient electrical connections are critical.
13. The semiconductor module according to claim 6 , wherein the first main electrodes of the two switching elements are electrically connected to the first conductor plate that is a single conductor plate, and the second main electrodes of the two switching elements are electrically connected to the second conductor plate that is a single conductor plate.
This invention relates to semiconductor modules used in power electronics, particularly for improving electrical connections in switching circuits. The problem addressed is the need for efficient and reliable electrical connections between multiple switching elements within a semiconductor module, which is critical for high-performance power conversion applications. The semiconductor module includes at least two switching elements, each with a first main electrode and a second main electrode. The first main electrodes of the two switching elements are electrically connected to a single first conductor plate, and the second main electrodes are electrically connected to a single second conductor plate. This configuration ensures uniform current distribution and reduces parasitic inductance, improving switching performance and reliability. The conductor plates may be made of conductive materials such as copper or aluminum and are designed to minimize electrical resistance and thermal resistance. The switching elements may be power transistors, such as MOSFETs or IGBTs, commonly used in inverters, converters, and motor drives. The module may also include additional components like gate drivers or control circuitry to manage switching operations. The design simplifies assembly and enhances thermal management by providing a compact and thermally conductive structure. This invention is particularly useful in high-power applications where efficiency and reliability are critical.
14. The semiconductor module according to claim 9 , wherein the first main electrodes of the two switching elements are electrically connected to the first conductor plate that is a single conductor plate, and the second main electrodes of the two switching elements are electrically connected to the second conductor plate that is a single conductor plate.
This invention relates to semiconductor modules used in power electronics, particularly for improving electrical connections in modules containing multiple switching elements. The problem addressed is the need for efficient and reliable electrical connections between the main electrodes of switching elements and conductor plates within the module, ensuring low resistance and high current-carrying capacity while minimizing parasitic inductance. The semiconductor module includes at least two switching elements, each with a first main electrode and a second main electrode. The first main electrodes of the two switching elements are electrically connected to a single first conductor plate, and the second main electrodes are electrically connected to a single second conductor plate. This configuration simplifies the module's internal wiring by reducing the number of conductor plates required, which helps lower manufacturing complexity and cost. The use of single conductor plates for each set of main electrodes ensures uniform current distribution and reduces electrical resistance, improving overall performance. Additionally, the design minimizes parasitic inductance, which is critical for high-frequency switching applications. The module may also include additional components such as control terminals for driving the switching elements and insulation layers to prevent electrical shorts. The conductor plates are typically made of conductive materials like copper or aluminum, optimized for thermal and electrical conductivity. This design is particularly useful in power conversion systems, such as inverters and converters, where efficiency and reliability are paramount.
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December 31, 2019
March 8, 2022
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