Methods, systems, and devices for reading and writing memory management data using a non-volatile cell based register are described. A memory device may include a set of latch units addressable via a set of row lines and a set of column lines. Each latch unit may include a sense amplifier coupled with a first line and a first non-volatile capacitor coupled with the first line and a second line, where the first capacitor is configured to store a charge representing one or more bits. Additionally, each latch unit may include a second capacitor coupled with the first line and a third line, where the second capacitor is configured to amplify a voltage at the first line based on the charge stored in the first capacitor.
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3. The apparatus of claim 2, wherein a quantity of the one or more bits is equal to a quantity of the one or more additional bits, and wherein the one or more bits have a same value as the one or more additional bits.
This invention relates to data processing systems, specifically to an apparatus for managing data integrity in memory storage. The problem addressed is ensuring accurate data transmission and storage by detecting and correcting errors that may occur during these processes. The apparatus includes a memory storage device and a controller. The controller is configured to receive data from a host system and store it in the memory storage device. The data is divided into multiple segments, each containing one or more bits. The controller also generates additional bits for each segment, which are used for error detection and correction. The quantity of these additional bits is equal to the quantity of the original bits in each segment, and the values of the additional bits are identical to the values of the original bits. This redundancy allows the controller to compare the original and additional bits during read operations to verify data integrity. If a discrepancy is detected, the controller can correct the error by replacing the corrupted bits with the corresponding additional bits. This ensures that the data stored in the memory device remains accurate and reliable over time. The apparatus is particularly useful in systems where data integrity is critical, such as in medical devices, financial systems, or industrial control systems.
4. The apparatus of claim 2, wherein the third capacitor comprises a plurality of non-volatile capacitors coupled with the fourth line and the second line, wherein the plurality of non-volatile capacitors are configured to store the third charge representing the one or more additional bits.
5. The apparatus of claim 4, wherein the fourth capacitor comprises a plurality of capacitors coupled with the fourth line and the third line, wherein the plurality of capacitors are configured to build the fourth charge at the fourth capacitor based at least in part on the third charge stored in the third capacitor and the signal applied to the second line.
6. The apparatus of claim 1, wherein the second capacitor comprises a non-volatile capacitor.
7. The apparatus of claim 1, wherein the first capacitor comprises a plurality of non-volatile capacitors coupled with the first line and the second line, wherein the plurality of non-volatile capacitors are configured to store the first charge representing the one or more bits.
8. The apparatus of claim 7, wherein the second capacitor comprises a plurality of capacitors coupled with the first line and the third line, wherein the plurality of capacitors are configured to build the second charge at the second capacitor based at least in part on the first charge stored in the first capacitor and the signal applied to the second line.
12. The memory device of claim 11, wherein a quantity of the one or more bits is equal to a quantity of the one or more additional bits, and wherein the one or more bits have a same value as the one or more additional bits.
16. The memory device of claim 9, wherein the first capacitor comprises a ferroelectric capacitor.
A memory device includes a memory cell with a first capacitor and a second capacitor, where the first capacitor is a ferroelectric capacitor. The ferroelectric capacitor stores data by polarizing a ferroelectric material, allowing non-volatile data retention without continuous power. The second capacitor may be a linear capacitor, such as a metal-insulator-metal (MIM) capacitor, used for charge storage or compensation. The memory cell operates by storing data in the ferroelectric capacitor while the second capacitor assists in read or write operations, improving reliability and performance. The ferroelectric capacitor's polarization states represent binary data, enabling fast read/write cycles and low power consumption. The device may integrate these capacitors in a semiconductor substrate, with interconnects linking them to peripheral circuitry for memory access. This design leverages the ferroelectric capacitor's non-volatility and the linear capacitor's stability to enhance memory functionality, addressing challenges in high-density, low-power memory applications.
20. The memory device of claim 19, wherein a quantity of the one or more bits is equal to a quantity of the one or more additional bits, and wherein the one or more bits have a same value as the one or more additional bits.
This invention relates to memory devices, specifically addressing the need for efficient data storage and retrieval in systems where data integrity and consistency are critical. The memory device includes a storage medium configured to store data in the form of bits and additional bits, where the quantity of the one or more bits is equal to the quantity of the one or more additional bits. The one or more bits and the one or more additional bits have identical values, ensuring redundancy and error detection or correction capabilities. The memory device may also include a controller that manages the storage and retrieval of these bits, ensuring that the data remains consistent and accurate. The redundancy provided by the identical bits and additional bits enhances reliability, particularly in applications where data corruption or loss could have significant consequences. This design is useful in systems requiring high data integrity, such as in computing, telecommunications, or storage systems, where maintaining accurate data is essential. The invention improves upon existing memory devices by providing a straightforward yet effective method for ensuring data consistency through redundant bit storage.
22. The memory device of claim 17, wherein each latch unit comprises a third, non-volatile, capacitor and a fourth capacitor, and wherein reading the one or more bits stored at the first capacitor is based at least in part on one or more additional bits stored by the third capacitor.
23. The memory device of claim 17, wherein the first capacitor comprises a ferroelectric capacitor.
A memory device includes a memory cell with a first capacitor and a second capacitor, where the first capacitor is a ferroelectric capacitor. The ferroelectric capacitor stores data by polarizing its ferroelectric material, allowing for non-volatile data retention. The second capacitor may be a linear capacitor, such as a metal-insulator-metal (MIM) capacitor, which provides a reference or complementary storage element. The memory cell operates by comparing the stored charge or polarization states of the two capacitors to determine the stored data. The ferroelectric capacitor enables high-density, low-power, and fast-access memory storage, addressing limitations of traditional volatile memory technologies like DRAM and non-volatile memory like flash. The device may integrate these capacitors in a semiconductor substrate, with interconnects and control circuitry to manage read and write operations. The use of ferroelectric materials allows for scalable, high-endurance memory solutions suitable for embedded applications, IoT devices, and high-performance computing. The memory cell design may also include transistors or other switching elements to isolate the capacitors during read/write cycles, ensuring reliable data access. This approach leverages the unique properties of ferroelectric materials to provide a compact, energy-efficient memory solution.
26. The method of claim 25, wherein a quantity of the one or more bits is equal to a quantity of the one or more additional bits, and wherein the one or more bits have a same value as the one or more additional bits.
This invention relates to data processing systems and methods for managing bit values in digital circuits. The problem addressed involves ensuring consistency and synchronization between sets of bits in digital systems, particularly where maintaining identical values between corresponding bit groups is critical for correct operation. The method involves processing one or more bits and one or more additional bits, where the number of bits in each group is equal. The key feature is that the bits in the first group must have the same value as the corresponding bits in the second group. This ensures that when these bit groups are used in subsequent operations, they remain synchronized, preventing errors that could arise from mismatched values. The method may be applied in various digital systems, such as memory controllers, data encoders, or error correction circuits, where bit consistency is essential for reliable performance. By enforcing this equality, the invention helps maintain data integrity and operational stability in digital processing environments.
27. The method of claim 25, wherein the second line is coupled with a fourth capacitor, and wherein the fourth capacitor is coupled with the sense amplifier, and wherein storing the one or more additional bits at the third capacitor is based at least in part on the third capacitor and the fourth capacitor being coupled with each other.
31. The method of claim 30, wherein a quantity of the one or more bits is equal to a quantity of the one or more additional bits, and wherein the one or more bits have a same value as the one or more additional bits.
32. The method of claim 30, wherein the second line is coupled with a fourth capacitor, and wherein the fourth capacitor is coupled with the sense amplifier, and wherein reading the one or more additional bits from the third capacitor is based at least in part on the third capacitor and the fourth capacitor being coupled with each other.
This invention relates to memory circuits, specifically to a method for reading additional bits from a memory cell using coupled capacitors. The problem addressed is improving data storage density and read efficiency in memory systems by leveraging parasitic or additional capacitors to extract extra bits without significantly increasing circuit complexity. The method involves a memory cell with a primary storage capacitor and one or more additional capacitors. A sense amplifier is used to detect the stored data. The key innovation is coupling a second line (e.g., a bitline or wordline) to a fourth capacitor, which is then connected to the sense amplifier. When reading data from a third capacitor (an additional storage element), the sense amplifier's operation is influenced by the interaction between the third and fourth capacitors. This coupling allows the sense amplifier to distinguish multiple bit states by detecting combined charge or voltage effects from the coupled capacitors, enabling multi-bit storage per cell. The technique may use parasitic capacitance or intentionally added capacitors to enhance storage capacity without requiring additional physical memory cells. The method improves memory density and read efficiency by leveraging existing or minimal additional circuitry to extract extra data bits.
35. The method of claim 34, wherein the first line is reactivated and the second line is activated substantially simultaneously.
This invention relates to a method for managing power distribution in an electrical system, particularly for controlling multiple power lines to ensure efficient and reliable energy delivery. The problem addressed is the need to balance power flow between lines to prevent overloads, reduce energy loss, and maintain system stability. The method involves selectively activating and reactivating power lines to optimize distribution. The method includes a first power line and a second power line, where the first line is initially in a deactivated state and the second line is in an activated state. The method reactivates the first line while simultaneously activating the second line. This coordinated control ensures that power is distributed evenly, preventing overloading of any single line and improving overall system efficiency. The simultaneous activation and reactivation of the lines help maintain voltage stability and reduce energy losses during transitions. The method may also include monitoring power conditions, such as voltage levels or current loads, to determine when activation or reactivation is necessary. By dynamically adjusting the state of the power lines based on real-time data, the system can adapt to changing demand and prevent disruptions. This approach is particularly useful in smart grid applications, where automated control of power distribution is essential for reliability and efficiency. The invention enhances power management by ensuring balanced load distribution and minimizing energy waste.
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June 30, 2020
October 4, 2022
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