The present disclosure provides a semiconductor component including a substrate, a plurality of metallic lines, a passivation layer and a spacer. The metallic lines are disposed on the substrate, the passivation layer is disposed over the substrate and the metallic lines, and the spacer is interposed between the substrate and the dielectric layer and between the metallic lines and the dielectric layer. The passivation layer has a first dielectric constant, and the spacer has a second dielectric constant less than the first dielectric constant.
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2. The semiconductor component of claim 1, wherein the spacer is filled with ambient air.
3. The semiconductor component of claim 1, further comprising a plurality of voids buried in the passivation layer.
A semiconductor component includes a passivation layer with a plurality of voids embedded within it. The passivation layer is applied over a semiconductor substrate, which may contain active or passive devices such as transistors, resistors, or capacitors. The voids are distributed throughout the passivation layer, creating a porous structure that can improve mechanical flexibility, reduce stress, or enhance thermal insulation properties. The passivation layer itself is typically an insulating material, such as silicon dioxide, silicon nitride, or a polymer, and serves to protect underlying semiconductor structures from environmental damage, contamination, or mechanical stress. The voids may be formed during deposition of the passivation layer or through post-processing techniques like etching or laser ablation. The presence of voids can also influence electrical properties, such as capacitance or dielectric breakdown strength, depending on their size, shape, and distribution. This design may be used in flexible electronics, high-performance integrated circuits, or other applications where controlled mechanical or thermal properties are desired.
4. The semiconductor component of claim 3, wherein the voids are disposed between the metallic lines.
5. The semiconductor component of claim 1, further comprising a plurality of first barrier liners sandwiched between the substrate and the metallic lines and surrounded by the spacer.
6. The semiconductor component of claim 5, further comprising a capping layer disposed over upper surfaces of the metallic lines.
7. The semiconductor component of claim 6, further comprising a plurality of second barrier liners interposed between the metallic lines and the capping layer and surrounded by the spacer.
8. The semiconductor component of claim 1, wherein the metallic lines have a width that gradually decreases at positions of increasing distance from an upper surface of the substrate, and the spacer has a thickness that gradually increases at positions of increasing distance from the upper surface of the substrate.
9. The semiconductor component of claim 1, wherein the passivation layer and the spacer include oxide-based dielectrics.
The semiconductor component relates to integrated circuit (IC) packaging and addresses challenges in protecting sensitive IC regions from environmental damage and electrical interference. The invention involves a passivation layer and a spacer structure that shield underlying conductive features, such as interconnects or bond pads, from moisture, contaminants, and mechanical stress. The passivation layer provides a barrier against external elements, while the spacer maintains structural integrity and electrical isolation between components. Both the passivation layer and the spacer are composed of oxide-based dielectrics, which offer high reliability, thermal stability, and compatibility with semiconductor fabrication processes. Oxide-based materials, such as silicon dioxide or silicon oxynitride, are chosen for their excellent insulating properties, resistance to chemical corrosion, and ease of integration into existing manufacturing workflows. The use of oxide-based dielectrics ensures long-term performance and reduces the risk of defects during IC operation. This design is particularly useful in advanced semiconductor devices where miniaturization and high-density interconnects demand robust protective layers. The invention improves device reliability, extends operational lifespan, and enhances manufacturing yield by preventing degradation of critical IC regions.
10. The semiconductor components of claim 1, wherein the metallic lines are electrically coupled to main features in the substrate.
The invention relates to semiconductor components with improved electrical connectivity between metallic lines and main features in a substrate. In semiconductor devices, efficient electrical coupling between conductive lines and underlying substrate features is critical for performance and reliability. Traditional designs often suffer from poor connectivity, leading to signal integrity issues and reduced device efficiency. This invention addresses the problem by ensuring robust electrical coupling between metallic lines and main features in the substrate, enhancing signal transmission and overall device functionality. The semiconductor components include a substrate with main features, such as transistors, interconnects, or other active/passive elements, and metallic lines formed above the substrate. The metallic lines are specifically designed to establish direct and reliable electrical connections with these main features. This coupling may involve conductive vias, bonding pads, or other interconnect structures that minimize resistance and ensure stable signal pathways. The invention may also incorporate additional layers or materials to enhance adhesion, conductivity, or thermal management between the metallic lines and substrate features. By optimizing the electrical coupling, the invention improves signal integrity, reduces power loss, and enhances the overall performance of semiconductor devices. This solution is particularly useful in high-density integrated circuits, advanced packaging, and applications requiring low-resistance interconnects. The design ensures compatibility with existing semiconductor manufacturing processes while providing superior electrical connectivity.
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March 16, 2021
November 22, 2022
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