A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, and a side surface between the first and second surfaces, and including a device region on the first surface a wiring structure on the surface of the semiconductor substrate, and having a dielectric layer and a metal wiring in the dielectric layer and electrically connected to the device region, and an insulating material layer on a side surface of the wiring structure and having a side surface connected to the side surface of the semiconductor substrate. The side surface of the insulating material layer has a first wave-shaped pattern in which concave-convex portions are repeated in a direction of the wiring structure that is perpendicular to the semiconductor substrate, and the side surface of the semiconductor substrate has a second wave-shaped pattern in which concave-convex portions are repeated in the direction.
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2. The method of claim 1, wherein the insulating material layer has a lower surface that is lower than the upper surface of the semiconductor substrate and higher than a lower surface the semiconductor substrate.
This invention relates to semiconductor device fabrication, specifically addressing challenges in forming insulating material layers on semiconductor substrates. The problem involves ensuring proper insulation while maintaining structural integrity and performance in semiconductor devices. The invention provides a method for forming an insulating material layer on a semiconductor substrate, where the insulating material layer has a lower surface positioned between the upper and lower surfaces of the semiconductor substrate. This configuration ensures effective insulation while avoiding excessive material buildup or structural weaknesses. The insulating material layer is deposited such that its lower surface is lower than the upper surface of the substrate but higher than the lower surface of the substrate, creating a balanced insulation profile. This method may be used in conjunction with other semiconductor processing steps, such as etching, deposition, or planarization, to achieve precise layer formation. The invention is particularly useful in applications requiring controlled insulation properties, such as in integrated circuits or microelectronic devices, where maintaining electrical isolation without compromising device performance is critical. The technique ensures reliable insulation while optimizing material usage and device functionality.
3. The method of claim 1, wherein the insulating material layer surrounds a chip wiring region of each of the plurality of semiconductor devices.
This invention relates to semiconductor device packaging, specifically addressing the challenge of insulating chip wiring regions to prevent electrical interference and improve reliability. The method involves forming an insulating material layer that fully encloses the wiring regions of multiple semiconductor devices within a package. This layer acts as a barrier, protecting the wiring from external electrical noise and potential short circuits, while also enhancing thermal management by isolating heat-generating components. The insulating material is applied in a controlled manner to ensure uniform coverage without damaging the delicate wiring structures. By surrounding the wiring regions, the method minimizes signal degradation and improves overall device performance. The approach is particularly useful in high-density semiconductor packages where proximity between components increases the risk of electrical crosstalk and thermal issues. The insulating layer may be composed of materials such as polymers, oxides, or other dielectric substances, chosen based on their insulating properties and compatibility with semiconductor manufacturing processes. This technique ensures long-term stability and functionality of the packaged devices, making it suitable for advanced electronic applications.
4. The method of claim 1, wherein cutting the isolation structure is performed by plasma etching periodically repeated in a thickness direction of the isolation structure.
This invention relates to semiconductor fabrication, specifically to methods for cutting isolation structures in integrated circuits. The problem addressed is the precise and efficient removal of isolation structures, such as shallow trench isolation (STI) regions, to enable subsequent processing steps like transistor formation or interconnect routing. Traditional etching methods may lack precision or uniformity, leading to defects or incomplete removal. The method involves cutting an isolation structure by plasma etching, where the etching process is periodically repeated in the thickness direction of the structure. This periodic etching approach allows for controlled and uniform material removal, reducing the risk of over-etching or under-etching. The plasma etching process may use reactive gases to selectively remove the isolation material while minimizing damage to surrounding structures. The periodic repetition ensures that the etching progresses incrementally, allowing for real-time monitoring and adjustment to maintain precision. This method is particularly useful in advanced semiconductor manufacturing where tight tolerances and high aspect ratios are required. The controlled etching process helps preserve the integrity of adjacent features, such as transistors or interconnects, while ensuring complete removal of the isolation structure. The technique may be applied to various isolation materials, including silicon dioxide or silicon nitride, commonly used in STI or other isolation schemes.
5. The method of claim 4, wherein cutting the plasma etching includes a Bosch process.
A method for plasma etching semiconductor materials, particularly for fabricating microelectromechanical systems (MEMS) or integrated circuits, addresses the challenge of achieving high-aspect-ratio, precise, and anisotropic etching. The method involves using a plasma etching process to selectively remove material from a substrate, such as silicon, while minimizing damage to the surrounding structure. The etching process is controlled by adjusting parameters like gas composition, pressure, and power to optimize etch rate, selectivity, and uniformity. The method may include multiple steps, such as deposition of a protective layer, etching, and removal of the protective layer, to achieve the desired etch profile. In one embodiment, the plasma etching process employs a Bosch process, which alternates between etching and passivation steps to create deep, vertical trenches with smooth sidewalls. The Bosch process uses a fluorocarbon gas for passivation and a sulfur hexafluoride (SF6) plasma for etching, allowing for precise control over the etch depth and profile. This method is particularly useful in applications requiring high-precision etching, such as semiconductor device fabrication, MEMS, and nanotechnology.
6. The method of claim 1, wherein the isolation trench has a width greater than a cut width applied during the cutting the isolation structure.
The invention relates to semiconductor fabrication, specifically to methods for forming isolation structures in integrated circuits. The problem addressed is achieving precise and reliable isolation between active regions on a semiconductor substrate, particularly when cutting isolation structures to define active areas. The method involves forming an isolation trench in a semiconductor substrate, where the trench has a width greater than the cut width applied during the cutting of the isolation structure. This ensures that the isolation structure can be accurately trimmed to the desired dimensions without compromising the integrity of the surrounding material. The isolation trench is filled with an insulating material, such as an oxide, to electrically isolate adjacent active regions. The cutting process is then performed to define the final dimensions of the isolation structure, with the initial trench width providing a margin for precise cutting. This approach improves the accuracy of the isolation structure's dimensions and reduces the risk of defects during the cutting process. The method is particularly useful in advanced semiconductor manufacturing where tight tolerances are required for high-density integrated circuits.
7. The method of claim 1, wherein the wiring structure includes a dielectric layer and a metal wiring in the dielectric layer and electrically connected to each of the plurality of device regions.
A method for fabricating semiconductor devices involves forming a wiring structure that includes a dielectric layer and a metal wiring embedded within the dielectric layer. The metal wiring is electrically connected to multiple device regions on a semiconductor substrate. This wiring structure enables efficient signal routing and interconnection between different active or passive components formed in the device regions. The dielectric layer provides electrical insulation while the metal wiring facilitates low-resistance electrical pathways. The method ensures reliable electrical connections across the semiconductor device, improving performance and reducing signal interference. The wiring structure may be part of a larger integrated circuit, where the device regions include transistors, capacitors, or other semiconductor elements. The dielectric layer can be composed of materials such as silicon dioxide or low-k dielectrics, while the metal wiring may consist of copper, aluminum, or other conductive metals. This approach enhances signal integrity and minimizes parasitic effects, making it suitable for advanced semiconductor manufacturing processes.
9. The method of claim 8, wherein a remaining metal pattern is in physical contact with the insulating material layer.
A method for fabricating semiconductor devices involves forming a metal pattern on a substrate and depositing an insulating material layer over the metal pattern. The method includes etching the insulating material layer to expose a portion of the metal pattern, followed by removing the exposed portion of the metal pattern to create a recessed region. A remaining metal pattern is left in physical contact with the insulating material layer. The recessed region is then filled with a conductive material, such as a metal or semiconductor, to form a conductive structure. This process is used to create electrical connections or conductive pathways in integrated circuits, addressing challenges related to electrical isolation and conductivity in semiconductor manufacturing. The method ensures proper alignment and contact between the remaining metal pattern and the insulating material, improving device performance and reliability. The conductive material filling the recessed region may be selected based on its compatibility with the surrounding materials and desired electrical properties. This technique is particularly useful in advanced semiconductor fabrication where precise control over conductive pathways is required.
10. The method of claim 1, wherein each of the plurality of semiconductor devices comprises a first region overlapping the device region and a second region surrounding the first region, and wherein the second region has a width in a range of 5 μm to 30 μm.
This invention relates to semiconductor device fabrication, specifically addressing the structural design of semiconductor devices to improve performance and reliability. The problem being solved involves optimizing the layout of semiconductor devices to prevent defects, reduce stress, and enhance electrical characteristics. The invention describes a method for fabricating semiconductor devices where each device includes a first region overlapping a device region and a second region surrounding the first region. The second region acts as a protective or functional boundary around the active device area. The width of this second region is controlled within a specific range, between 5 micrometers and 30 micrometers, to balance structural integrity and space efficiency. This design ensures proper isolation, reduces the risk of electrical shorts or mechanical failures, and maintains consistent device performance. The first region is the primary active area where the semiconductor device operates, while the second region provides additional support, insulation, or stress relief. By defining the width of the second region within the specified range, the invention ensures optimal spacing for thermal management, electrical insulation, and mechanical stability. This structural configuration is particularly useful in high-density semiconductor layouts where minimizing space while maintaining reliability is critical. The method may be applied to various semiconductor devices, including transistors, diodes, or integrated circuits, to enhance their robustness and functionality.
11. The method of claim 1, wherein the insulating material layer comprises an oxide.
This invention relates to semiconductor device fabrication, specifically to methods for forming insulating material layers in integrated circuits. The problem addressed is improving the performance and reliability of semiconductor devices by optimizing the composition and properties of insulating layers, particularly those containing oxide materials. The method involves depositing an insulating material layer, where the layer includes an oxide. The oxide can be a dielectric material such as silicon dioxide, aluminum oxide, or other suitable oxides. The insulating layer is formed on a substrate, such as a semiconductor wafer, and may be used as a gate dielectric, interlayer dielectric, or passivation layer in a semiconductor device. The oxide layer can be deposited using techniques like chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The oxide layer may also be formed by thermal oxidation of the substrate surface. The method ensures that the oxide layer has desired electrical and mechanical properties, such as high dielectric strength, low leakage current, and good adhesion to underlying layers. The oxide layer may be further processed, such as by etching or planarization, to achieve the desired device structure. This method enhances device performance by providing a high-quality insulating layer that reduces leakage and improves reliability.
12. The method of claim 1, wherein the first wave-shaped pattern has a first repetition cycle that is different from a second repetition cycle of the second wave-shaped pattern.
This invention relates to a method for designing or manufacturing structures with wave-shaped patterns, addressing the need for improved control over material properties, such as strength, flexibility, or thermal conductivity, by varying the repetition cycles of the patterns. The method involves applying at least two distinct wave-shaped patterns to a surface or material, where the first pattern has a first repetition cycle and the second pattern has a second repetition cycle that differs from the first. The repetition cycle refers to the distance between consecutive peaks or troughs of the wave-shaped pattern. By adjusting the repetition cycles, the method allows for customization of the structural or functional properties of the material. For example, a shorter repetition cycle may increase stiffness, while a longer cycle may enhance flexibility. The patterns can be applied to various materials, including metals, polymers, or composites, and can be used in applications such as lightweight structures, heat exchangers, or biomedical implants. The method may also include additional steps, such as selecting the wave amplitude, phase shift, or pattern orientation, to further optimize performance. The invention provides a way to tailor material behavior by leveraging geometric variations in wave-shaped patterns.
14. The method of claim 13, wherein the insulating protective film comprises a polymer having a CF2 group.
This invention relates to a method for forming an insulating protective film on a substrate, particularly for use in semiconductor devices or electronic components. The problem addressed is the need for a durable, high-quality insulating film that can withstand harsh environmental conditions while maintaining electrical insulation properties. The method involves depositing an insulating protective film on a substrate using a chemical vapor deposition (CVD) process. The film is formed from a polymer material containing a CF2 (difluoromethylene) group, which enhances its chemical resistance, thermal stability, and dielectric properties. The CF2 group improves the film's resistance to moisture, chemicals, and thermal degradation, making it suitable for applications requiring long-term reliability. The deposition process may include plasma-enhanced CVD (PECVD) or other techniques to ensure uniform film formation. The polymer film is applied in a controlled environment to achieve precise thickness and composition. The CF2-containing polymer provides superior barrier properties against contaminants, reducing the risk of corrosion or electrical leakage in electronic devices. This method is particularly useful in semiconductor manufacturing, where insulating layers must protect underlying structures while allowing precise electrical performance. The CF2 group in the polymer enhances adhesion to the substrate and improves mechanical strength, ensuring the film remains intact under mechanical stress or thermal cycling. The resulting film is highly resistant to environmental factors, making it ideal for advanced electronic packaging and microelectronic applications.
18. The method of claim 15, wherein the insulating material layer comprises a first material that is different from a second material of the dielectric layer.
A method for fabricating semiconductor devices addresses the challenge of improving insulation and dielectric performance in integrated circuits. The method involves forming an insulating material layer adjacent to a dielectric layer, where the insulating material layer comprises a first material that is distinct from a second material of the dielectric layer. This differentiation in materials enhances electrical insulation properties, reduces leakage currents, and improves overall device reliability. The insulating material layer may be deposited using techniques such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), while the dielectric layer may be formed through processes like atomic layer deposition (ALD) or spin coating. The distinct materials are selected based on their dielectric constants, thermal stability, and compatibility with semiconductor fabrication processes. This approach ensures optimal insulation while maintaining high-performance electrical characteristics in advanced semiconductor devices. The method is particularly useful in applications requiring precise control over dielectric properties, such as in high-density memory devices or high-frequency circuits.
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October 6, 2022
March 19, 2024
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