A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.
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3. The semiconductor structure of claim 2, wherein the first insulation layer includes a vertex disposed between the third insulation layer and the substrate.
A semiconductor structure includes a substrate with a first insulation layer formed on its surface. The first insulation layer has a vertex positioned between a third insulation layer and the substrate. The third insulation layer is formed over the first insulation layer, creating a stepped or angled interface. The structure also includes a second insulation layer formed adjacent to the first insulation layer, with the second insulation layer having a different material composition or thickness compared to the first insulation layer. The first insulation layer may be a dielectric material, such as silicon oxide or silicon nitride, while the second insulation layer may be another dielectric or a conductive material. The vertex in the first insulation layer helps define a precise boundary or transition region between the third insulation layer and the substrate, which can be critical for controlling electrical properties, thermal conductivity, or mechanical stability in semiconductor devices. This configuration may be used in advanced semiconductor manufacturing processes, such as in the formation of isolation regions, gate structures, or interconnect layers, where precise material interfaces are required to optimize device performance. The stepped or angled interface created by the vertex can improve adhesion, reduce stress, or enhance electrical insulation between layers.
4. The semiconductor structure of claim 3, wherein the bottom surface of the first insulation layer is in contact with the third insulation layer, and the bottom surface of the first insulation layer and the first surface of the first insulation layer are in contact to form the vertex.
This invention relates to semiconductor structures, specifically addressing the integration of insulation layers to improve structural integrity and electrical performance. The structure includes a first insulation layer with a bottom surface and a first surface, where these surfaces meet to form a vertex. The bottom surface of the first insulation layer is in direct contact with a third insulation layer, ensuring a stable interface between these layers. The first insulation layer is positioned above a substrate, with the third insulation layer acting as an intermediate insulating barrier. The structure may also include a second insulation layer adjacent to the first insulation layer, forming a continuous insulating region. The vertex formed by the first insulation layer's surfaces enhances mechanical stability and prevents defects at the interface. This design is particularly useful in advanced semiconductor devices where precise insulation layer alignment and structural robustness are critical. The invention aims to minimize leakage currents and improve reliability by ensuring proper insulation layer contact and alignment. The configuration is applicable in semiconductor manufacturing processes requiring high-precision layer deposition and patterning.
5. The semiconductor structure of claim 1, wherein the first insulation layer includes a protrusion and a thickness of the protrusion is substantially between 50 and 20000 angstroms.
The semiconductor structure relates to an improved insulation layer design for semiconductor devices, addressing issues such as electrical leakage, mechanical stability, and integration challenges in advanced semiconductor manufacturing. The structure includes a first insulation layer with a protrusion feature, where the protrusion has a thickness substantially between 50 and 20,000 angstroms. This protrusion enhances electrical isolation between conductive elements, reduces parasitic capacitance, and improves structural integrity. The insulation layer may be composed of materials such as silicon dioxide, silicon nitride, or low-k dielectrics, depending on the application. The protrusion can be formed through deposition, etching, or planarization processes, ensuring precise control over its dimensions. The thickness range ensures sufficient insulation while maintaining manufacturability and performance. This design is particularly useful in high-density semiconductor devices, such as memory chips, logic circuits, and power electronics, where precise insulation and reliability are critical. The protrusion may also facilitate better adhesion between layers and improve resistance to mechanical stress, extending the device's operational lifespan. The structure can be integrated into various semiconductor fabrication processes, including CMOS, FinFET, and 3D stacking technologies.
6. The semiconductor structure of claim 1, wherein an aspect ratio of the conductive via is greater than 1.5.
A semiconductor structure includes a conductive via with an aspect ratio greater than 1.5. The structure is designed to address challenges in high-density interconnects, particularly in advanced semiconductor devices where increased aspect ratios are needed to accommodate tighter pitch requirements while maintaining electrical performance. The conductive via is formed within a dielectric material and connects different conductive layers, such as metal interconnects or active regions, in the semiconductor device. The high aspect ratio allows for deeper vias with narrower widths, enabling more efficient use of space in densely packed semiconductor layouts. The via is typically filled with a conductive material, such as copper or tungsten, and may include a barrier layer to prevent diffusion into the surrounding dielectric. The structure ensures reliable electrical connectivity while minimizing resistance and signal delay, which are critical for high-performance integrated circuits. The aspect ratio greater than 1.5 enhances the via's ability to support advanced node technologies, where traditional via geometries may fail due to manufacturing or reliability constraints. This design is particularly useful in applications requiring high-speed signaling and compact device footprints, such as in logic chips, memory devices, and system-on-chip (SoC) architectures.
7. The semiconductor structure of claim 1, wherein the first surface of the first insulation layer facing the substrate has a plurality of slopes.
The semiconductor structure relates to an improved insulation layer design for semiconductor devices, addressing issues such as stress concentration and poor adhesion between the insulation layer and the substrate. The structure includes a substrate, a first insulation layer over the substrate, and a second insulation layer over the first insulation layer. The first insulation layer has a first surface facing the substrate and a second surface opposite the first surface. The first surface of the first insulation layer has a plurality of slopes, which reduce stress concentration and improve adhesion between the insulation layer and the substrate. The second surface of the first insulation layer may have a plurality of slopes as well, further enhancing mechanical stability. The second insulation layer is formed over the first insulation layer, providing additional structural support and electrical insulation. The slopes on the first surface of the first insulation layer are designed to distribute stress more evenly across the interface, preventing delamination and improving device reliability. This design is particularly useful in advanced semiconductor manufacturing where thin insulation layers are prone to mechanical failures. The structure may also include additional layers or features to further optimize performance.
9. The semiconductor structure of claim 8, wherein the thickness of the first insulation layer increases along the direction from the second surface to the first surface.
The semiconductor structure relates to an integrated circuit design addressing challenges in signal integrity and thermal management. The structure includes a substrate with a first surface and a second surface, where the second surface is opposite the first surface. A first insulation layer is formed on the second surface, and its thickness increases along the direction from the second surface toward the first surface. This graded thickness improves electrical insulation and thermal dissipation by optimizing material distribution. The structure also includes a second insulation layer on the first surface, which may be a dielectric material to isolate conductive elements. Conductive vias extend through the first insulation layer, connecting electrical components between the first and second surfaces. The increasing thickness of the first insulation layer enhances reliability by reducing stress concentrations and improving heat flow, particularly in high-density semiconductor devices. The design is suitable for applications requiring robust insulation and efficient thermal management, such as advanced microprocessors and memory chips.
11. The semiconductor structure of claim 10, wherein the conductive via is through the second insulation layer and the third insulation layer.
A semiconductor structure includes multiple insulation layers and conductive vias to improve electrical connectivity and reliability in integrated circuits. The structure addresses challenges in modern semiconductor fabrication, such as signal integrity, thermal management, and manufacturing defects, by optimizing the arrangement of conductive vias and insulation layers. The structure comprises a first insulation layer, a second insulation layer over the first insulation layer, and a third insulation layer over the second insulation layer. A conductive via extends through the second and third insulation layers, providing electrical connection between underlying and overlying conductive features. The via is positioned to minimize resistance and capacitance, enhancing signal transmission. The insulation layers are selected for their dielectric properties and thermal stability, ensuring long-term reliability. The structure may also include additional conductive vias and insulation layers, depending on the specific application. This design is particularly useful in advanced semiconductor devices where precise control of electrical and thermal properties is critical. The via's placement through multiple insulation layers ensures robust interconnectivity while maintaining structural integrity.
12. The semiconductor structure of claim 8, wherein the first insulation layer adjacent to the first surface of the substrate includes one or more planes.
A semiconductor structure includes a substrate with a first surface and a second surface, where the first surface has a first insulation layer adjacent to it. This insulation layer contains one or more planes, which may be parallel or oriented in other configurations. The structure also includes a second insulation layer adjacent to the second surface of the substrate, and a conductive layer embedded within the second insulation layer. The conductive layer is electrically connected to the substrate through a conductive via that extends through the second insulation layer. The conductive via may be formed by etching a hole in the second insulation layer and filling it with a conductive material. The first insulation layer may serve as a barrier or dielectric layer, while the second insulation layer provides insulation for the conductive layer and via. The planes within the first insulation layer may enhance structural integrity, thermal management, or electrical isolation properties. The conductive layer and via enable electrical connectivity between the substrate and external components, facilitating signal transmission or power distribution in integrated circuits. This structure is useful in semiconductor devices requiring robust insulation and reliable electrical connections.
13. The semiconductor structure of claim 8, wherein the thickness of the first insulation layer adjacent to the first surface of the substrate is substantially between 50 and 20000 angstroms.
The semiconductor structure relates to integrated circuit fabrication, specifically addressing the need for precise control of insulation layer thickness to optimize electrical performance and reliability. The structure includes a substrate with a first surface and a first insulation layer formed adjacent to this surface. The insulation layer has a thickness that is critically controlled to be substantially between 50 and 20,000 angstroms. This thickness range ensures proper electrical isolation while minimizing parasitic capacitance and leakage currents, which are critical for high-performance semiconductor devices. The insulation layer may be composed of materials such as silicon dioxide, silicon nitride, or other dielectric materials commonly used in semiconductor manufacturing. The controlled thickness is achieved through deposition techniques like chemical vapor deposition (CVD) or atomic layer deposition (ALD), followed by precise etching or polishing processes. The structure may also include additional layers, such as conductive interconnects or additional insulation layers, to form a complete integrated circuit. The precise thickness control of the first insulation layer is essential for maintaining signal integrity, reducing crosstalk, and ensuring long-term reliability in advanced semiconductor devices.
14. The semiconductor structure of claim 8, wherein the first insulation layer comprises an oxide liner layer.
The semiconductor structure relates to integrated circuit fabrication, specifically addressing challenges in insulating conductive features to prevent electrical interference and improve device reliability. The structure includes a first insulation layer formed over a substrate, where the first insulation layer comprises an oxide liner layer. This oxide liner layer serves as a barrier to enhance insulation properties, reducing leakage currents and improving dielectric performance. The structure further includes a second insulation layer over the first insulation layer, which may be a low-k dielectric material to minimize parasitic capacitance. The conductive features, such as metal lines or vias, are embedded within these insulation layers, with the oxide liner layer ensuring proper isolation. The structure may also include a capping layer over the conductive features to further enhance reliability. The oxide liner layer is particularly effective in preventing diffusion of conductive materials into the surrounding insulation, maintaining long-term electrical integrity. This design is critical for advanced semiconductor nodes where feature sizes are reduced, and insulation performance is paramount to device functionality. The use of an oxide liner layer in the first insulation layer improves adhesion and reduces defects, contributing to higher yield and performance in integrated circuits.
16. The semiconductor structure of claim 15, wherein a second sidewall of the first insulation layer is substantially free of the second insulation layer.
The semiconductor structure relates to integrated circuit fabrication, specifically addressing challenges in forming insulation layers with precise sidewall coverage. The problem involves ensuring selective deposition or removal of insulation material to avoid unintended coverage on certain sidewalls, which can interfere with subsequent processing steps or device performance. The structure includes a first insulation layer with a first sidewall and a second sidewall. A second insulation layer is selectively formed on the first sidewall of the first insulation layer while the second sidewall remains substantially free of the second insulation layer. This selective coverage is achieved through controlled deposition techniques, such as anisotropic etching or selective growth processes, ensuring that only the desired sidewall is coated. The remaining sidewall is left exposed, which may be critical for subsequent patterning, contact formation, or other fabrication steps where unobstructed access is required. The selective sidewall coverage prevents electrical shorts, improves isolation between conductive features, and enables precise alignment of subsequent layers. This technique is particularly useful in advanced node semiconductor manufacturing where tight tolerances and selective material placement are essential for device functionality and yield. The structure may be part of a larger integrated circuit, such as a transistor, capacitor, or interconnect system, where controlled insulation layer formation is necessary for reliable operation.
17. The semiconductor structure of claim 15, wherein the second insulation layer stops at an interface between the substrate and the first insulation layer.
The semiconductor structure relates to an improved insulation layer configuration in semiconductor devices, addressing issues such as leakage current, reliability, and performance degradation caused by improper insulation layer placement. The structure includes a substrate, a first insulation layer formed on the substrate, and a second insulation layer positioned over the first insulation layer. The second insulation layer is designed to terminate precisely at the interface between the substrate and the first insulation layer, ensuring optimal insulation properties without extending into the substrate. This precise alignment prevents defects, reduces parasitic capacitance, and enhances device reliability. The first insulation layer may be a dielectric material, such as silicon dioxide, while the second insulation layer may be a different dielectric or a composite material tailored for specific electrical or thermal properties. The structure may be part of a transistor, memory cell, or other semiconductor component where controlled insulation is critical. The alignment of the second insulation layer at the substrate-insulation interface ensures consistent performance and minimizes manufacturing variability. This configuration is particularly useful in advanced semiconductor nodes where precise layer control is essential for device functionality.
18. The semiconductor structure of claim 15, further comprising a seed layer between the second insulation layer and the conductive via.
The semiconductor structure relates to an integrated circuit with improved electrical connectivity, addressing issues such as poor adhesion, high resistance, or reliability problems in conductive vias. The structure includes a substrate with a first insulation layer and a conductive via extending through the first insulation layer to contact an underlying conductive feature. A second insulation layer is deposited over the first insulation layer and the conductive via, and a seed layer is positioned between the second insulation layer and the conductive via. The seed layer enhances adhesion and reduces contact resistance between the conductive via and the second insulation layer, improving overall electrical performance and reliability. The seed layer may be composed of a conductive material such as titanium, tantalum, or a combination of metals, ensuring compatibility with subsequent processing steps. The structure may also include additional layers, such as a barrier layer or a diffusion prevention layer, to further enhance electrical and mechanical properties. This design is particularly useful in advanced semiconductor manufacturing, where precise control of material interfaces is critical for device performance.
19. The semiconductor structure of claim 18, wherein the second insulation layer stops at an interface between the seed layer and the first insulation layer.
A semiconductor structure includes a substrate with a first insulation layer formed on its surface. A seed layer is deposited on the first insulation layer, and a second insulation layer is formed over the seed layer. The second insulation layer is configured to stop at the interface between the seed layer and the first insulation layer, ensuring precise alignment and preventing material diffusion between layers. The structure may also include a conductive layer formed on the second insulation layer, which can be patterned to create electrical connections. The seed layer facilitates uniform deposition of subsequent layers, improving structural integrity and electrical performance. This design addresses challenges in semiconductor fabrication, such as layer misalignment and material contamination, by providing a controlled interface between the seed layer and the first insulation layer. The precise stopping of the second insulation layer at this interface enhances reliability and performance in integrated circuits.
20. The semiconductor structure of claim 18, wherein the second insulation layer is entirely separated from the conductive via by the seed layer.
A semiconductor structure includes a substrate with a conductive via extending through an insulation layer. The conductive via is formed by depositing a seed layer over the insulation layer and within a via opening, followed by electroplating a conductive material onto the seed layer to fill the via. The structure further includes a second insulation layer deposited over the conductive via and the seed layer. The second insulation layer is entirely separated from the conductive via by the seed layer, ensuring electrical isolation between the via and the second insulation layer. The seed layer acts as a barrier, preventing direct contact between the conductive via and the second insulation layer, which may be necessary to avoid contamination, diffusion, or electrical shorting. The insulation layers may be dielectric materials such as silicon dioxide or silicon nitride, while the conductive via may be copper, tungsten, or another metal. The seed layer, typically a thin conductive film like titanium or tantalum, ensures uniform plating and adhesion while maintaining isolation between the via and subsequent layers. This configuration is useful in integrated circuit manufacturing to prevent defects and improve reliability in multi-layer semiconductor devices.
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February 6, 2021
April 9, 2024
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