A semiconductor package device includes a first dielectric layer, a first interconnection layer, a second interconnection layer, and a second dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The first interconnection layer is within the first dielectric layer. The second interconnection layer is on the second surface of the first dielectric layer and extends from the second surface of the first dielectric layer into the first dielectric layer to electrically connect to the first interconnection layer. The second dielectric layer covers the second surface and the lateral surface of the first dielectric layer and the second interconnection layer.
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2. The semiconductor device package of claim 1, wherein the second dielectric layer includes a molding compound.
The semiconductor device package relates to advanced packaging technologies for integrated circuits, addressing challenges in thermal management, electrical insulation, and structural integrity. The package includes multiple dielectric layers, with the second dielectric layer specifically incorporating a molding compound. This molding compound provides mechanical support, enhances thermal dissipation, and ensures electrical isolation between components. The molding compound is typically a polymer-based material, such as epoxy resin, filled with inorganic fillers to improve thermal conductivity and reduce thermal expansion mismatch with semiconductor materials. The second dielectric layer may also include additional features like vias or conductive traces, depending on the package design. The overall structure aims to improve reliability, performance, and manufacturability of semiconductor devices in high-density applications. The use of a molding compound in the second dielectric layer helps mitigate stress-induced failures and improves heat spreading, which is critical for high-power or high-performance integrated circuits. This approach is particularly relevant in modern packaging techniques like fan-out wafer-level packaging (FOWLP) or advanced system-in-package (SiP) designs.
3. The semiconductor device package of claim 2, wherein the second dielectric layer is in contact with the lateral surface of the first dielectric layer.
A semiconductor device package includes a substrate with a first dielectric layer and a second dielectric layer. The first dielectric layer is formed on the substrate and has a lateral surface. The second dielectric layer is in contact with the lateral surface of the first dielectric layer, providing electrical insulation and structural support. The package may also include conductive elements, such as conductive vias or traces, embedded within or on the dielectric layers to facilitate electrical connections. The second dielectric layer may be deposited or laminated onto the first dielectric layer, ensuring proper alignment and adhesion. This configuration enhances the package's reliability by minimizing delamination and improving thermal and mechanical stability. The dielectric layers may be composed of materials such as polyimide, epoxy, or other insulating polymers, selected based on their dielectric properties and compatibility with the substrate and conductive elements. The package is designed for use in integrated circuits, microelectronic devices, or other applications requiring compact, high-performance semiconductor packaging. The contact between the second dielectric layer and the lateral surface of the first dielectric layer ensures a robust interface, reducing the risk of defects and improving overall device performance.
4. The semiconductor device package of claim 1, wherein the second distance is greater than the first distance.
Semiconductor device packaging. This disclosure relates to a semiconductor device package featuring specific spatial arrangements between components. The package includes a first component and a second component positioned relative to the first component. A critical aspect of this package design is the defined spatial separation between these components. Specifically, there is a first distance that characterizes the separation between a reference point on the first component and a reference point on the second component. Concurrently, there is a second distance that also characterizes the separation between these components. The distinguishing feature of this embodiment is that the second distance is greater than the first distance. This arrangement is designed to manage thermal properties, electrical isolation, or signal integrity within the semiconductor package.
5. The semiconductor device package of claim 1, further comprising a first wiring layer disposed within the first dielectric layer, wherein the first metal layer is a seed layer, and the seed layer is between the first interconnection layer and the first wiring layer.
A semiconductor device package includes a substrate with a first dielectric layer and a first metal layer. The first metal layer is a seed layer that facilitates the deposition of conductive materials. A first interconnection layer is formed on the seed layer, providing electrical connections within the package. Additionally, a first wiring layer is embedded within the first dielectric layer, positioned such that the seed layer is between the first interconnection layer and the first wiring layer. This configuration enhances electrical conductivity and structural integrity by ensuring proper adhesion and signal transmission between the wiring layer and the interconnection layer. The seed layer acts as an intermediate conductive layer, improving the reliability of the electrical connections. The overall structure is designed to support high-performance semiconductor devices by optimizing signal pathways and reducing resistance in the conductive layers. This design is particularly useful in advanced packaging applications where efficient signal routing and robust electrical connections are critical.
7. The semiconductor device package of claim 1, further comprising a carrier supporting the first dielectric layer, wherein a width of the carrier is greater than a width of the first dielectric layer.
This invention relates to semiconductor device packaging, specifically addressing challenges in structural support and dimensional stability during manufacturing and operation. The package includes a carrier that supports a first dielectric layer, with the carrier having a width greater than that of the dielectric layer. This design ensures mechanical stability by preventing misalignment or deformation of the dielectric layer during assembly or thermal cycling. The carrier provides a rigid foundation, accommodating additional layers or components while maintaining precise dimensional control. The wider carrier also facilitates handling and integration into larger systems, reducing stress concentrations at the edges of the dielectric layer. This configuration is particularly useful in high-density packaging where thermal and mechanical stresses are significant. The invention improves reliability and manufacturability by minimizing defects caused by uneven support or thermal expansion mismatches. The carrier may be made of materials such as silicon, glass, or organic substrates, depending on the application requirements. The dielectric layer, typically composed of materials like silicon dioxide or polymer films, insulates and protects underlying conductive structures. This structural enhancement is critical for advanced semiconductor packages, including integrated circuits, memory modules, and power electronics, where performance and durability are paramount.
8. The semiconductor device package of claim 7, wherein the second dielectric layer vertically overlaps a lateral surface of the carrier.
The semiconductor device package relates to advanced packaging technologies for integrated circuits, particularly addressing challenges in thermal management and structural integrity in high-density electronic systems. The invention involves a multi-layered structure where a second dielectric layer is positioned to vertically overlap a lateral surface of a carrier substrate. This configuration enhances thermal dissipation by providing a direct conductive path for heat generated by the semiconductor components, while also improving mechanical stability by reinforcing the interface between the carrier and the overlying layers. The second dielectric layer may be composed of materials with high thermal conductivity, such as ceramic or polymer composites, to further optimize heat transfer. The overlapping arrangement ensures that heat from the semiconductor devices is efficiently conducted away from the active regions, reducing thermal hotspots and improving overall device reliability. Additionally, the structural overlap strengthens the package against mechanical stresses, such as those encountered during manufacturing or operation, thereby preventing delamination or other failures. This design is particularly useful in high-performance computing, RF applications, and other fields where thermal and mechanical robustness are critical. The invention builds on prior art by integrating thermal management and structural reinforcement in a single layer, simplifying the packaging process while enhancing performance.
9. The semiconductor device package of claim 1, wherein a thickness of the second portion is substantially the same as the width of the first portion.
The semiconductor device package relates to an improved structure for integrated circuit packaging, addressing challenges in thermal management and mechanical stability. The package includes a substrate with a first portion having a defined width and a second portion with a thickness that is substantially equal to the width of the first portion. This design ensures uniform heat dissipation and structural integrity by balancing material distribution. The first portion may serve as a conductive path or support structure, while the second portion provides additional mechanical reinforcement or thermal conductivity. The package may also include electrical interconnects, such as solder bumps or conductive traces, to connect the semiconductor die to external circuitry. The uniform thickness-to-width ratio in the second portion optimizes stress distribution, reducing the risk of warping or cracking during thermal cycling. This configuration is particularly useful in high-performance applications where thermal efficiency and reliability are critical. The package may further incorporate insulating layers, heat spreaders, or encapsulation materials to enhance performance and durability. The invention improves upon existing packaging solutions by providing a more robust and thermally efficient design.
11. The semiconductor device package of claim 10, wherein a thickness of the third portion is substantially the same as a thickness of the first portion.
A semiconductor device package is designed to improve thermal management and structural integrity in high-performance electronic applications. The package includes a substrate with multiple conductive layers and a semiconductor die mounted thereon. The substrate has a first portion with a first thickness and a second portion with a second thickness, where the second thickness is greater than the first thickness to enhance mechanical support and heat dissipation. A third portion of the substrate, distinct from the first and second portions, has a thickness substantially equal to the first portion. This third portion may serve as a connection interface or a redistribution layer for electrical routing. The package also includes an encapsulant covering the semiconductor die and portions of the substrate, and conductive interconnects such as solder bumps or pillars for external connections. The design ensures uniform stress distribution and efficient heat spreading, addressing issues like thermal hotspots and mechanical failure in high-power devices. The third portion's thickness matching the first portion facilitates consistent electrical performance and reliable interconnections.
13. The semiconductor device package of claim 1, further comprising an electronic device disposed directly under the first interconnection layer.
A semiconductor device package includes an electronic device positioned directly beneath a first interconnection layer. The package is designed to enhance electrical performance and thermal management in integrated circuits. The electronic device, such as a transistor or sensor, is embedded directly under the interconnection layer, which consists of conductive traces and vias that route electrical signals. This configuration reduces signal propagation delays and improves power efficiency by minimizing the distance between the electronic device and the interconnection network. The package may also include additional interconnection layers stacked above the first layer, each providing further signal routing and connectivity. The electronic device is mounted on a substrate or within a cavity formed in the substrate, ensuring mechanical stability and thermal dissipation. The interconnection layers are fabricated using materials like copper or aluminum, while insulating layers, such as silicon dioxide or polymer dielectrics, electrically isolate the conductive traces. This design is particularly useful in high-density semiconductor applications where compact packaging and efficient signal transmission are critical. The direct placement of the electronic device under the interconnection layer optimizes space utilization and reduces parasitic capacitance, leading to improved overall device performance.
14. The semiconductor device package of claim 13, wherein the second dielectric layer covers a surface of the electronic device, and wherein a lateral surface of the second dielectric layer protrudes from a lateral surface of the electronic device.
A semiconductor device package includes a substrate with a first dielectric layer and a conductive structure embedded within the first dielectric layer. An electronic device is mounted on the substrate and electrically connected to the conductive structure. A second dielectric layer is formed over the substrate and the electronic device, covering the surface of the electronic device while leaving its lateral surface exposed. The second dielectric layer extends laterally beyond the electronic device, creating a protruding lateral surface that surrounds the electronic device. This configuration improves structural integrity and electrical insulation while allowing for precise alignment and connection of the electronic device within the package. The conductive structure may include conductive traces, vias, or pads that facilitate electrical connections between the electronic device and external components. The second dielectric layer provides protection against environmental factors and mechanical stress, enhancing the reliability of the semiconductor device package. The protruding lateral surface of the second dielectric layer ensures proper spacing and alignment during subsequent assembly processes, such as stacking or integration with other components. This design is particularly useful in advanced packaging technologies where miniaturization and high-density interconnects are required.
15. The semiconductor device package of claim 13, wherein a thickness of the second dielectric layer is greater than a thickness of the electronic device.
The semiconductor device package relates to advanced packaging technologies for electronic devices, particularly addressing challenges in thermal management and structural integrity in high-performance integrated circuits. The invention involves a layered structure where a second dielectric layer is integrated into the package to enhance electrical insulation and mechanical stability. This second dielectric layer is specifically designed to have a thickness greater than that of the electronic device it encapsulates, ensuring sufficient insulation and protection while maintaining optimal thermal dissipation. The package may include multiple conductive layers and interconnects to facilitate electrical connections between the electronic device and external components. The increased thickness of the second dielectric layer helps prevent electrical shorts, reduces stress concentrations, and improves overall reliability in high-density packaging applications. The design is particularly useful in applications where miniaturization and high thermal efficiency are critical, such as in microprocessors, memory chips, and power electronics. By optimizing the dielectric layer thickness relative to the electronic device, the package achieves a balance between insulation performance and thermal management, extending the lifespan and reliability of the device.
16. The semiconductor device package of claim 1, wherein a first horizontal width of the first portion of the first wiring layer in contact with the first dielectric layer is different from a second horizontal width of the second portion of the first wiring layer in contact with the first dielectric layer.
This invention relates to semiconductor device packaging, specifically addressing the challenge of optimizing electrical performance and reliability in integrated circuits by controlling the geometry of wiring layers within the package. The invention involves a semiconductor device package with a first wiring layer that includes at least two distinct portions, each having different horizontal widths where they interface with a first dielectric layer. The first portion of the wiring layer has a first horizontal width at its contact point with the dielectric layer, while the second portion has a second, different horizontal width at its contact point. This variation in width allows for tailored electrical properties, such as resistance and capacitance, across different sections of the wiring layer, improving signal integrity and reducing signal loss. The dielectric layer provides electrical insulation and mechanical support, while the varying widths of the wiring layer portions enable precise control over current distribution and thermal management. This design is particularly useful in high-density semiconductor packages where minimizing signal interference and enhancing thermal dissipation are critical. The invention ensures efficient signal transmission and reliable operation by optimizing the interaction between the wiring layer and the dielectric layer through controlled width variations.
17. The semiconductor device package of claim 16, wherein the first interconnection layer partially overlaps the first portion of the first wiring layer in a perpendicular direction.
The semiconductor device package relates to advanced packaging techniques for integrated circuits, addressing challenges in electrical connectivity and space efficiency. The invention involves a multi-layered structure where a first interconnection layer is positioned to partially overlap a first portion of a first wiring layer in a perpendicular direction. This overlapping configuration enhances signal routing flexibility and reduces footprint while maintaining reliable electrical connections. The first wiring layer may include multiple portions, with the first portion being specifically aligned to interface with the interconnection layer. The interconnection layer is designed to facilitate vertical and horizontal signal transmission, improving overall package density and performance. The partial overlap ensures precise alignment and minimizes parasitic effects, such as capacitance and inductance, which can degrade signal integrity. This design is particularly useful in high-density semiconductor packages where efficient use of space and optimized electrical performance are critical. The overlapping arrangement allows for more complex routing schemes without increasing the package size, making it suitable for applications requiring compact yet high-performance integrated circuits.
18. The semiconductor device package of claim 17, wherein a pitch of the first interconnection layer is greater than of a pitch the first portion of the first wiring layer.
The semiconductor device package relates to advanced packaging technologies for integrated circuits, addressing challenges in achieving high-density interconnections while maintaining manufacturability and reliability. The invention focuses on optimizing the layout and pitch of interconnection layers to improve signal integrity, reduce parasitic effects, and enhance thermal performance in densely packed semiconductor packages. The package includes a first wiring layer divided into at least two portions, where the first portion has a finer pitch compared to the first interconnection layer. This design allows for high-density routing in critical areas while using a coarser pitch in the interconnection layer to simplify manufacturing processes and reduce costs. The first interconnection layer is electrically connected to the first wiring layer, facilitating signal transmission between different components within the package. The pitch difference ensures compatibility with various fabrication techniques, such as lithography or etching, while minimizing signal loss and crosstalk. The package may also include additional wiring layers and interconnection layers, each with tailored pitch configurations to optimize performance for specific applications, such as high-speed data processing or power delivery. This approach balances electrical performance and manufacturing feasibility, making it suitable for advanced semiconductor devices in computing, telecommunications, and other high-performance electronics.
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July 25, 2022
April 9, 2024
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