A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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2. The method of claim 1, further comprising providing a plasma source and exposing the treatment reactant chemistry from the treatment reactant source to the plasma source to form one or more excited treatment reactant species.
This invention relates to a method for treating a substrate using plasma-enhanced chemical reactions. The method addresses the challenge of efficiently activating treatment reactants to enhance their reactivity for surface modification, cleaning, or deposition processes. The method involves supplying a treatment reactant chemistry from a treatment reactant source to a substrate. Additionally, a plasma source is provided to expose the treatment reactant chemistry to plasma, generating one or more excited treatment reactant species. These excited species are more reactive than their ground-state counterparts, improving the efficiency and effectiveness of the treatment process. The plasma source may be configured to generate a plasma discharge, such as a direct current (DC), radio frequency (RF), or microwave plasma, to ionize or dissociate the treatment reactant molecules. The excited species may include ions, radicals, or metastable molecules, which can interact with the substrate surface to achieve desired modifications. This approach enhances the reactivity of the treatment chemistry, enabling precise control over surface interactions for applications in semiconductor manufacturing, materials processing, or surface engineering. The method may be integrated into existing plasma treatment systems or adapted for specific industrial processes requiring high reactivity and selectivity.
3. The method of claim 1, wherein the treatment reactant chemistry is selected from the group consisting of one or more silanes, silicon hydrides, and boron hydrides.
This invention relates to a method for treating a surface, particularly for modifying its chemical or physical properties. The method involves applying a treatment reactant to the surface to induce a chemical reaction that alters the surface characteristics. The treatment reactant chemistry is selected from one or more silanes, silicon hydrides, or boron hydrides. These compounds are chosen for their ability to react with the surface, forming stable chemical bonds that enhance properties such as adhesion, corrosion resistance, or hydrophobicity. The method may involve depositing the reactant in a vapor phase or liquid phase, depending on the application. The surface to be treated can be metallic, ceramic, polymeric, or composite, and the treatment may be applied in industrial, electronic, or biomedical applications where surface modification is critical. The use of silanes, silicon hydrides, or boron hydrides ensures strong bonding and long-term durability of the modified surface. This approach addresses challenges in surface engineering where traditional coatings fail to provide sufficient adhesion or environmental stability. The method is particularly useful in applications requiring precise control over surface chemistry for functional performance.
4. The method of claim 1, wherein the step of providing a treatment reactant chemistry comprises providing ammonia to the reaction chamber.
This invention relates to a method for treating a substrate, such as a semiconductor wafer, using a treatment reactant chemistry in a reaction chamber. The method addresses the challenge of efficiently and uniformly applying chemical treatments to substrates in semiconductor manufacturing processes. The process involves introducing a treatment reactant into the reaction chamber to interact with the substrate, enhancing its properties or modifying its surface. Specifically, the method includes providing ammonia as the treatment reactant chemistry to the reaction chamber. Ammonia is used to facilitate chemical reactions that improve substrate quality, such as surface passivation, cleaning, or deposition of thin films. The method ensures precise control over the reaction conditions, such as temperature, pressure, and gas flow rates, to achieve desired treatment outcomes. The use of ammonia enables selective and controlled chemical interactions, improving process efficiency and substrate uniformity. This approach is particularly useful in semiconductor fabrication, where precise and repeatable chemical treatments are critical for device performance and yield. The method may also include additional steps, such as pre-treatment or post-treatment processes, to further enhance the substrate's properties. The invention provides a reliable and scalable solution for integrating ammonia-based chemical treatments into semiconductor manufacturing workflows.
5. The method of claim 1, wherein the treatment reactant chemistry comprises a material with the same chemical formula as a decomposition product of the metal CVD precursor.
This invention relates to chemical vapor deposition (CVD) processes for depositing metal films, addressing challenges in precursor decomposition and film purity. The method involves using a treatment reactant chemistry that shares the same chemical formula as a decomposition product of the metal CVD precursor. This approach ensures that the treatment reactant interacts effectively with the precursor, promoting controlled decomposition and minimizing impurities in the deposited metal film. The treatment reactant may be introduced during or after the precursor deposition step to enhance film quality, uniformity, and adhesion. The method is particularly useful in semiconductor manufacturing, where high-purity metal films are critical for device performance. By matching the chemical formula of the treatment reactant to the precursor's decomposition product, the process avoids introducing foreign species that could contaminate the film. This technique improves deposition efficiency and reduces defects, making it suitable for advanced microelectronic applications. The invention focuses on optimizing the interaction between the precursor and treatment reactant to achieve precise control over film properties.
6. The method of claim 5, wherein the decomposition product comprises a beta hydride elimination product of the metal CVD precursor.
The invention relates to chemical vapor deposition (CVD) processes, specifically methods for decomposing metal CVD precursors to form thin films. The problem addressed is controlling the decomposition of metal precursors to achieve desired film properties, such as purity and uniformity, while minimizing unwanted byproducts. The method involves decomposing a metal CVD precursor to produce a decomposition product, where the decomposition product includes a beta hydride elimination product of the metal precursor. Beta hydride elimination is a chemical reaction where a hydrogen atom adjacent to a metal center migrates to the metal, forming a metal-hydride bond and a double bond in the organic ligand. This process helps stabilize the decomposition pathway, reducing unwanted side reactions and improving film quality. The method may also involve selecting specific reaction conditions, such as temperature and pressure, to favor the beta hydride elimination pathway. The resulting decomposition product can then be used to deposit metal-containing films with improved properties. This approach is particularly useful in semiconductor manufacturing, where precise control over film deposition is critical. The invention ensures efficient precursor decomposition while minimizing impurities, leading to higher-quality thin films.
7. The method of claim 1, further comprising the step of exposing the treatment reactant to thermal excitation.
This invention relates to a method for treating a material using a treatment reactant, where the method includes exposing the treatment reactant to thermal excitation to enhance the treatment process. The treatment reactant is introduced into a treatment chamber containing the material to be treated, and the reactant interacts with the material to modify its properties. The thermal excitation step involves applying heat to the reactant, either directly or indirectly, to increase its reactivity or efficiency in treating the material. This thermal excitation may involve heating the reactant to a specific temperature range or applying controlled thermal energy to activate the reactant. The method may also include controlling the pressure, flow rate, or concentration of the reactant within the treatment chamber to optimize the treatment process. The thermal excitation step ensures that the reactant achieves the desired chemical or physical interaction with the material, improving the treatment outcome. This method is particularly useful in industrial or manufacturing processes where precise control of material properties is required, such as in semiconductor fabrication, surface coating, or material modification.
8. The method of claim 1, further comprising providing a carrier/purge gas source, wherein the metal halide source, the metal CVD source, and the treatment reactant source are separate from the carrier/purge gas source.
This invention relates to a chemical vapor deposition (CVD) process for depositing metal-containing films, particularly addressing challenges in precursor delivery and reaction control. The method involves using separate sources for a metal halide precursor, a metal CVD precursor, and a treatment reactant, each independently controlled to optimize film properties. A carrier or purge gas source is also provided, distinct from the precursor sources, to facilitate gas flow and prevent cross-contamination. The process ensures precise delivery of reactants, enhancing uniformity and purity of the deposited film. The separation of precursor sources from the carrier/purge gas source allows independent optimization of gas flow dynamics and reaction conditions, improving deposition efficiency and film quality. This approach is particularly useful in semiconductor manufacturing, where precise control over film composition and structure is critical. The method may be applied to various metal-containing films, including those used in electronic devices, catalysts, or coatings. The invention addresses limitations in conventional CVD processes where precursor mixing or gas flow issues can lead to inconsistencies in film deposition. By isolating precursor sources and using a dedicated carrier/purge gas system, the method achieves better process control and reproducibility.
9. The method of claim 1, wherein the step of providing a treatment reactant chemistry to the reaction chamber includes providing a reactant selected from one or more of the group consisting of hydrogen compounds including one or more hydrogen atoms and compounds including a halogen.
This invention relates to a chemical treatment process involving the introduction of specific reactants into a reaction chamber to facilitate a desired chemical reaction. The process addresses the challenge of efficiently controlling reaction conditions to achieve precise chemical transformations, particularly in applications such as semiconductor manufacturing, material synthesis, or environmental remediation. The method involves supplying a treatment reactant chemistry to the reaction chamber, where the reactant is selected from hydrogen compounds containing one or more hydrogen atoms or compounds containing a halogen. These reactants may include hydrogen gas (H2), hydrogen-containing molecules like ammonia (NH3) or silane (SiH4), or halogen-containing compounds such as chlorine (Cl2), fluorine (F2), or hydrogen halides like hydrogen chloride (HCl). The selection of these reactants allows for tailored chemical interactions, enabling processes like reduction, oxidation, etching, or deposition, depending on the application. The reactants are introduced in a controlled manner to ensure optimal reaction conditions, such as temperature, pressure, and concentration, to achieve the desired chemical outcome. This method enhances reaction efficiency, selectivity, and reproducibility, making it suitable for industrial-scale applications where precise chemical control is critical. The use of hydrogen or halogen-based reactants provides flexibility in addressing various chemical challenges, from material synthesis to surface modification.
12. The method of claim 11, further comprising exposing the treatment reactant chemistry to a plasma source.
This invention relates to a method for treating a substrate using a treatment reactant chemistry, particularly in semiconductor manufacturing or surface modification processes. The method addresses the challenge of efficiently and precisely modifying substrate surfaces to enhance properties such as adhesion, wettability, or chemical reactivity. The process involves applying a treatment reactant chemistry to the substrate, where the reactant interacts with the surface to induce desired chemical or physical changes. The method further includes exposing the treatment reactant chemistry to a plasma source, which activates or enhances the reactivity of the reactant. Plasma exposure can dissociate molecules, generate reactive species, or alter the energy state of the reactant, thereby improving the treatment efficiency or enabling new surface modifications. The plasma source may be generated using techniques such as capacitively coupled plasma, inductively coupled plasma, or microwave plasma, and can be applied in a controlled environment to ensure uniform treatment. This approach allows for fine-tuning of surface properties by adjusting plasma parameters like power, frequency, or gas composition. The method is particularly useful in applications requiring precise surface engineering, such as semiconductor device fabrication, biomedical coatings, or advanced materials processing.
13. The method of claim 11, further comprising exposing the treatment reactant chemistry to a thermal excitation source.
This invention relates to a method for treating a material, particularly for modifying its surface properties. The method involves applying a treatment reactant chemistry to the material, where the reactant chemistry includes a reactive species capable of chemically altering the material's surface. The treatment reactant chemistry is delivered in a controlled manner, such as through a nozzle or applicator, to ensure uniform application. The method further includes exposing the treatment reactant chemistry to a thermal excitation source, such as heat or infrared radiation, to enhance the reactivity of the reactant species. This thermal excitation accelerates the chemical reaction between the reactant and the material, improving the efficiency and effectiveness of the surface modification. The method is particularly useful in industrial applications where precise control over surface properties, such as adhesion, wettability, or corrosion resistance, is required. The thermal excitation step ensures that the reaction proceeds at an optimal rate, reducing processing time and energy consumption while achieving desired surface characteristics. The invention addresses the need for efficient and controllable surface treatment methods in manufacturing and material processing industries.
14. The method of claim 11, wherein the residue buildup comprises a polymerized decomposition product of the metal CVD precursor, wherein the treatment reactant chemistry comprises a material with a same chemical formula as the decomposition product of the metal CVD precursor.
This invention relates to a method for removing residue buildup in semiconductor manufacturing, specifically addressing the challenge of polymerized decomposition products from metal chemical vapor deposition (CVD) precursors. During metal CVD processes, these precursors decompose, forming residues that adhere to chamber surfaces and equipment, leading to contamination and reduced process efficiency. The method involves treating these residues with a reactant chemistry that matches the chemical formula of the decomposition product. By using a reactant with the same chemical structure as the residue, the treatment effectively breaks down or dissolves the buildup, restoring equipment performance and extending operational lifespan. The approach ensures compatibility with the original deposition process while minimizing additional chemical interactions that could introduce new contaminants. This selective treatment is particularly useful in high-precision semiconductor fabrication where residue removal must be precise and non-destructive to underlying materials. The method improves cleaning efficiency, reduces downtime, and enhances yield by preventing cross-contamination between different deposition processes.
15. The method of claim 11, wherein the treatment reactant chemistry comprises a chlorine-terminated molecule.
This invention relates to a method for treating a substrate, particularly for modifying its surface properties. The method addresses the challenge of achieving precise and controlled surface modifications, which is critical in applications such as semiconductor manufacturing, biomedical devices, and material coatings. The process involves applying a treatment reactant chemistry to the substrate, where the reactant chemistry includes a chlorine-terminated molecule. This chlorine-terminated molecule facilitates selective chemical reactions on the substrate surface, enabling tailored functionalization. The method may also involve pre-treating the substrate to activate or clean the surface, ensuring optimal interaction with the chlorine-terminated reactant. The treatment can be performed under specific conditions, such as controlled temperature, pressure, or exposure time, to achieve desired surface properties. The chlorine-terminated molecule may be part of a larger reactant system, which could include additional components to enhance reactivity or stability. The resulting modified substrate exhibits improved characteristics, such as enhanced adhesion, biocompatibility, or chemical resistance, depending on the application. This approach provides a versatile and efficient way to engineer surface properties for various industrial and scientific uses.
16. The method of claim 11, wherein the treatment reactant chemistry comprises chlorine.
This invention relates to a method for treating water or wastewater using a treatment reactant chemistry that includes chlorine. The method involves introducing a treatment reactant into a water stream to remove contaminants, such as organic compounds, pathogens, or other impurities. The chlorine-based chemistry reacts with the contaminants to neutralize or degrade them, improving water quality. The method may also include monitoring the water stream to determine the presence and concentration of contaminants, adjusting the treatment reactant dosage based on the monitoring results to ensure effective treatment. The system may further include a reactor or contact chamber where the treatment reactant and water stream interact, allowing sufficient time for the reaction to occur. The method is particularly useful in water purification, industrial wastewater treatment, or municipal water systems where chlorine-based disinfection is required. The use of chlorine ensures broad-spectrum disinfection and oxidation of contaminants, making the method effective for various applications. The invention may also include additional steps such as pH adjustment or filtration to enhance treatment efficiency.
17. The method of claim 11, wherein the step of providing the treatment reactant chemistry comprises providing hydrogen chloride.
This invention relates to a chemical treatment process for removing contaminants from a substrate, particularly in semiconductor manufacturing. The process addresses the challenge of effectively cleaning surfaces without damaging delicate structures or leaving harmful residues. The method involves exposing the substrate to a treatment reactant chemistry that reacts with contaminants to form volatile byproducts, which are then removed from the substrate surface. The treatment reactant chemistry includes hydrogen chloride, which selectively reacts with contaminants such as oxides, metals, or organic residues. The process may also involve controlling environmental conditions like temperature, pressure, or gas flow to optimize the reaction efficiency. The substrate may be a semiconductor wafer, and the treatment can be performed in a reaction chamber or a batch processing system. The method ensures thorough cleaning while minimizing surface damage and residue buildup, improving the yield and performance of semiconductor devices. The use of hydrogen chloride as a reactant enables precise control over the cleaning process, allowing for selective removal of specific contaminants without affecting the underlying material. The process may also include pre-treatment or post-treatment steps to enhance cleaning effectiveness or prepare the substrate for subsequent processing stages.
18. The method of claim 11, wherein the residue buildup comprises organic material.
This invention relates to methods for managing residue buildup in industrial or manufacturing processes, particularly focusing on organic material accumulation. The problem addressed is the inefficiency and potential contamination caused by organic residue buildup in equipment, pipelines, or processing systems, which can lead to reduced performance, increased maintenance costs, and product quality issues. The method involves detecting and removing organic residue buildup using a combination of monitoring and cleaning techniques. A monitoring system tracks residue accumulation in real-time, identifying areas where organic material has accumulated beyond acceptable thresholds. Once detected, a cleaning process is initiated, which may include mechanical, chemical, or thermal methods to dislodge and remove the organic residue. The cleaning process is designed to be automated or semi-automated, minimizing manual intervention and downtime. The method may also incorporate predictive analytics to anticipate residue buildup based on historical data and process conditions, allowing for preemptive cleaning before significant accumulation occurs. Additionally, the system may adjust cleaning parameters dynamically to optimize efficiency and minimize resource usage. The invention ensures that industrial processes maintain optimal performance by preventing organic residue from impairing system functionality.
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May 16, 2022
April 23, 2024
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