Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.
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2. The thin film deposition method according to claim 1, wherein the source gas includes silicon, the plasma atmosphere is generated by applying at least one of the high-frequency power and low-frequency power, and the reactive gas includes nitrogen and oxygen.
This invention relates to a thin film deposition method for forming a silicon oxynitride film. The method addresses the challenge of precisely controlling the composition and properties of the deposited film, which is critical for applications in semiconductor devices, displays, and other advanced technologies. The process involves introducing a source gas containing silicon into a deposition chamber, where a plasma atmosphere is generated by applying high-frequency power, low-frequency power, or a combination of both. A reactive gas mixture of nitrogen and oxygen is also introduced to react with the source gas, facilitating the deposition of a silicon oxynitride film on a substrate. The plasma atmosphere enhances the reactivity of the gases, enabling uniform and controlled film growth. The method allows for fine-tuning the film's composition by adjusting the ratio of nitrogen to oxygen in the reactive gas, as well as the power levels applied to generate the plasma. This ensures the deposited film exhibits desired electrical, optical, and mechanical properties for specific applications. The technique is particularly useful in manufacturing high-performance semiconductor devices where precise material properties are essential.
3. The thin film deposition method according to claim 1, wherein, a ratio of the source gas is 1.2˜2.5 to 1.
A thin film deposition method addresses the challenge of achieving uniform and high-quality film deposition in semiconductor or display manufacturing. The method involves controlling the ratio of a source gas to a carrier gas during the deposition process. Specifically, the source gas ratio is maintained between 1.2 and 2.5 to 1, ensuring optimal film properties such as thickness, density, and uniformity. This ratio range is critical for balancing deposition efficiency and film quality, preventing defects like uneven coating or excessive material waste. The method may include pre-treatment steps to prepare the substrate surface, such as cleaning or surface activation, and post-treatment steps like annealing to enhance film stability. The deposition process can be performed using techniques such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), where precise gas flow control is essential. The method ensures consistent film characteristics across large substrates, making it suitable for applications in microelectronics, photovoltaics, and flat-panel displays. By optimizing the source gas ratio, the method improves yield and reliability in thin film manufacturing.
4. The thin film deposition method according to claim 1, wherein the source gas includes a SiH4 gas.
This invention relates to a thin film deposition method, specifically addressing the challenge of efficiently depositing high-quality thin films in semiconductor manufacturing. The method involves using a source gas containing silane (SiH4) to deposit a silicon-containing thin film onto a substrate. The process is conducted in a deposition chamber where the substrate is heated to a controlled temperature, and the source gas is introduced into the chamber. The gas undergoes a chemical reaction, typically decomposition or reaction with other gases, to form a thin film on the substrate surface. The method ensures uniform film thickness and composition by precisely controlling parameters such as gas flow rate, chamber pressure, and substrate temperature. The use of SiH4 as the source gas enables the deposition of silicon-based films, which are critical for applications in microelectronics, photovoltaics, and other semiconductor devices. The method may also include additional steps, such as pre-treatment of the substrate or post-deposition annealing, to enhance film properties like adhesion, crystallinity, and electrical conductivity. This approach improves deposition efficiency, reduces defects, and ensures high-quality thin films suitable for advanced semiconductor applications.
5. The thin film deposition method according to claim 4, wherein the reactive gas includes at least one of N2O and NO.
This invention relates to a thin film deposition method, specifically addressing the challenge of improving film quality and deposition efficiency in semiconductor manufacturing. The method involves depositing a thin film on a substrate by introducing a reactive gas into a deposition chamber containing a precursor gas. The reactive gas reacts with the precursor gas to form a thin film on the substrate. The reactive gas includes at least one of N2O (nitrous oxide) or NO (nitric oxide), which enhances the reactivity and uniformity of the deposited film. The method may also involve controlling the flow rate of the reactive gas to optimize film properties. The precursor gas may be a metal-containing compound, such as a metal halide or metal organic compound, which reacts with the reactive gas to form a metal-containing thin film. The deposition process may be performed at elevated temperatures to promote chemical reactions between the gases. The method is particularly useful for depositing high-quality dielectric or conductive films in semiconductor devices, improving performance and reliability. The use of N2O or NO as the reactive gas ensures efficient film formation while minimizing defects and impurities.
6. The thin film deposition method according to claim 1, wherein the upper thin film is deposited under a pressure of 1.5 Torr to 4.0 Torr.
This invention relates to a thin film deposition method, specifically addressing the challenge of optimizing deposition conditions to achieve desired film properties. The method involves depositing an upper thin film on a substrate under controlled pressure conditions. The upper thin film is deposited at a pressure ranging from 1.5 Torr to 4.0 Torr. This pressure range is selected to enhance film uniformity, adhesion, and other critical characteristics. The deposition process may involve techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), where the pressure is carefully regulated to ensure optimal film growth. The method may also include pre-treatment steps, such as substrate cleaning or surface activation, to improve film adhesion and quality. Additionally, the deposition may involve multiple layers, where the upper thin film is deposited after one or more lower layers, each with specific properties tailored to the application. The controlled pressure during deposition ensures that the upper thin film achieves the desired thickness, density, and structural integrity, making it suitable for applications in electronics, optics, or protective coatings. The method may further include post-deposition treatments, such as annealing or etching, to refine the film's properties. By maintaining the deposition pressure within the specified range, the method ensures consistent and high-quality film formation.
7. The thin film deposition method according to claim 1, wherein the upper thin film includes a silicon oxynitride film.
This invention relates to a thin film deposition method, specifically for forming a silicon oxynitride film as part of a multilayer structure. The method addresses challenges in semiconductor manufacturing where precise control of film composition and properties is critical for device performance. The process involves depositing a lower thin film on a substrate, followed by the deposition of an upper thin film. The upper thin film is a silicon oxynitride film, which is a compound containing silicon, oxygen, and nitrogen. This film is deposited using a chemical vapor deposition (CVD) technique, where precursor gases react to form the desired material on the substrate. The silicon oxynitride film serves as a barrier or insulating layer, providing electrical insulation, moisture resistance, or protection against diffusion of impurities. The deposition parameters, such as temperature, pressure, and gas flow rates, are controlled to achieve the desired film properties, including thickness, composition, and uniformity. This method is particularly useful in semiconductor fabrication, where silicon oxynitride films are commonly used in transistors, capacitors, or interlayer dielectrics. The invention ensures high-quality film deposition with controlled stoichiometry, enhancing device reliability and performance.
8. The thin film deposition method according to claim 1, wherein the power supply unit supplies the high frequency power having a center frequency band of 10 MHz to 40 MHz, and the low frequency power having a center frequency band of 300 kHz to 500 kHz.
A thin film deposition method involves depositing a thin film on a substrate using a plasma-enhanced process. The method addresses challenges in achieving uniform film properties and high deposition rates by controlling plasma density and ion energy distribution. The process uses a power supply unit that provides both high-frequency and low-frequency power to a plasma generation chamber. The high-frequency power operates within a center frequency band of 10 MHz to 40 MHz, while the low-frequency power operates within a center frequency band of 300 kHz to 500 kHz. The high-frequency power enhances plasma density, improving film uniformity and deposition efficiency, while the low-frequency power controls ion energy, optimizing film adhesion and quality. The combined use of these frequency bands allows precise tuning of plasma characteristics, enabling the deposition of high-quality thin films with desired properties. This method is particularly useful in semiconductor manufacturing, where precise control over film thickness, uniformity, and composition is critical. The dual-frequency approach ensures consistent film performance across large substrates, addressing limitations of single-frequency deposition techniques.
9. The thin film deposition method according to claim 1, wherein the upper thin film is treated by supplying the reactive gas without supplying the source gas under the plasma atmosphere generated by the high-frequency power and low-frequency power.
This invention relates to a thin film deposition method, specifically addressing challenges in controlling film properties during plasma-enhanced deposition processes. The method involves depositing a thin film by supplying a source gas and a reactive gas under a plasma atmosphere generated by both high-frequency and low-frequency power. The key improvement lies in treating the upper portion of the deposited film by supplying only the reactive gas, without the source gas, while maintaining the plasma atmosphere. This selective treatment step enhances film uniformity, density, or other desired properties by allowing independent control over the upper film layer's characteristics. The method is particularly useful in semiconductor manufacturing, where precise film properties are critical for device performance. By decoupling the deposition and treatment steps, the process achieves better control over film composition, stress, and adhesion compared to conventional single-step deposition methods. The use of dual-frequency plasma further enables fine-tuning of the plasma density and energy distribution, improving film quality. This approach is applicable to various thin film materials, including dielectrics, metals, and semiconductors, and can be integrated into existing deposition systems with minimal modifications. The invention solves the problem of achieving high-quality films with tailored properties in a single process without requiring additional post-deposition treatments.
10. The thin film deposition method according to claim 1, wherein the upper thin film is sequentially treated while maintaining the plasma atmosphere during deposition of the upper thin film.
This invention relates to thin film deposition methods, specifically addressing challenges in maintaining film quality and process efficiency during the deposition of multiple layers. The method involves depositing an upper thin film onto a substrate while sequentially treating the film in a continuous plasma atmosphere. This ensures that the film properties are uniformly controlled without exposing the substrate to atmospheric conditions between treatments, which can degrade film quality. The sequential treatment may include processes such as etching, doping, or surface modification, all performed while sustaining the plasma environment. By avoiding breaks in the plasma atmosphere, the method minimizes contamination, improves adhesion between layers, and enhances overall film uniformity and performance. The approach is particularly useful in semiconductor manufacturing, where precise control of thin film properties is critical for device functionality. The method can be applied to various deposition techniques, including chemical vapor deposition (CVD) and physical vapor deposition (PVD), and is compatible with different substrate materials. The invention aims to streamline the deposition process while maintaining high-quality film characteristics.
11. The thin film deposition method according to claim 1, wherein the lower thin film is an amorphous carbon film, a titanium oxide film, or a spin on glass (SOG).
This invention relates to thin film deposition methods, specifically for forming a lower thin film layer in semiconductor or microelectronic fabrication. The method addresses challenges in achieving uniform, high-quality thin films with desired properties such as adhesion, density, and thermal stability. The lower thin film layer is deposited as an amorphous carbon film, a titanium oxide film, or a spin-on glass (SOG) layer. Amorphous carbon films provide excellent thermal and chemical resistance, while titanium oxide films offer high refractive indices and dielectric properties. SOG layers are used for planarization and gap-filling due to their spin-coating process. The deposition process ensures precise control over film thickness, composition, and uniformity, which is critical for subsequent layers in device fabrication. The method may involve chemical vapor deposition (CVD), atomic layer deposition (ALD), or spin-coating techniques, depending on the material. The lower thin film serves as a base layer for additional thin films, improving adhesion and preventing defects. This approach enhances device performance and reliability in applications such as integrated circuits, sensors, and optical coatings.
13. The method according to claim 12, wherein the plasma treatment is performed by supplying only the reactive gas under a plasma atmosphere generated by the high-frequency power and low-frequency power.
This invention relates to plasma treatment methods for modifying material surfaces, particularly in semiconductor or materials processing. The problem addressed is achieving precise and controlled surface modification without relying on additional energy sources or complex setups. The method involves generating a plasma atmosphere using both high-frequency and low-frequency power to treat a material surface. The key improvement is performing the plasma treatment by supplying only a reactive gas under this dual-frequency plasma atmosphere. This eliminates the need for additional energy inputs or auxiliary processes, simplifying the treatment while maintaining effectiveness. The reactive gas interacts with the material surface under the influence of the combined high-frequency and low-frequency plasma, enabling controlled chemical reactions or physical modifications. This approach is particularly useful for applications requiring fine-tuned surface properties, such as adhesion enhancement, contamination removal, or surface activation, without introducing unwanted byproducts or damage. The method ensures uniform treatment and reduces process complexity by relying solely on the reactive gas and the dual-frequency plasma environment.
14. The method according to claim 13, wherein the source gas is a SiH4 gas and the reactive gas is at least one of a N2O gas and NO gas.
This invention relates to a method for depositing a silicon-containing film on a substrate using a chemical vapor deposition (CVD) process. The method addresses the challenge of achieving high-quality, uniform film deposition with precise control over film properties. The process involves introducing a source gas and a reactive gas into a deposition chamber containing the substrate. The source gas provides silicon atoms for film formation, while the reactive gas reacts with the source gas to facilitate deposition. The method ensures optimal gas flow rates, chamber pressure, and temperature to enhance film uniformity and adhesion. In this specific embodiment, the source gas is silane (SiH4) gas, and the reactive gas is either nitrous oxide (N2O) gas, nitric oxide (NO) gas, or a combination of both. These reactive gases enable the formation of silicon oxide or silicon nitride films with tailored electrical and mechanical properties. The method may also include pre-treatment steps to clean the substrate surface and post-treatment steps to improve film stability. The process is particularly useful in semiconductor manufacturing for applications requiring high-purity, conformal films.
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June 28, 2021
April 23, 2024
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