An integrated circuit structure includes a first bank group and a second bank group sharing one set of data read and write drive circuits, and the set of data read and write drive circuits includes: a read control module that is connected to a read data bus, a first read and write data bus, and a second read and write data bus, and is configured to read data of the first bank group onto the read data bus, and to read data of the second bank group onto the read data bus; and a write control module that is connected to a write data bus, the first read and write data bus, and the second read and write data bus, and is configured to write data of the write data bus into the first bank group, and to write data of the write data bus into the second bank group.
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3. The integrated circuit structure according to claim 2, wherein the first write drive unit and the second write drive unit are located in a first region, the first write drive unit and the second write drive unit are arranged in parallel in a first direction, the write control unit and the first region are arranged in parallel in a second direction, and the second direction is perpendicular to the first direction.
This invention relates to an integrated circuit structure designed to improve the layout and efficiency of write drive units in memory devices. The structure addresses the challenge of optimizing space and signal integrity in high-density memory arrays by arranging write drive units in a specific geometric configuration. The integrated circuit includes a first write drive unit and a second write drive unit, both positioned within a first region. These units are aligned parallel to each other in a first direction, ensuring compact placement and minimizing signal interference. Additionally, a write control unit is positioned parallel to the first region but oriented in a second direction, which is perpendicular to the first direction. This orthogonal arrangement enhances signal routing efficiency and reduces layout congestion. The structure ensures that the write drive units and control unit are spatially optimized, improving performance and reliability in memory operations. The parallel and perpendicular alignment of components facilitates efficient signal propagation and minimizes cross-talk, making the design suitable for advanced memory technologies.
4. The integrated circuit structure according to claim 3, wherein the first write drive unit is located in a first column, the second write drive unit is located in a second column, and the write control unit occupies the first column and the second column in the first direction.
The invention relates to an integrated circuit structure designed for memory or logic circuits, specifically addressing the spatial arrangement of write drive units and a write control unit to optimize layout efficiency and performance. The structure includes a first write drive unit positioned in a first column and a second write drive unit positioned in a second column. A write control unit spans both the first and second columns in a first direction, ensuring efficient signal routing and minimizing area usage. This arrangement allows the write control unit to centrally manage the write operations of both drive units while maintaining a compact footprint. The design improves signal integrity and reduces latency by shortening interconnect distances between the control unit and the drive units. The structure is particularly useful in high-density memory arrays or logic circuits where space optimization and performance are critical. The layout ensures that the write control unit can simultaneously control multiple write drive units without requiring additional routing layers or complex wiring, thereby enhancing manufacturability and reliability. The invention focuses on balancing spatial constraints with functional performance, making it suitable for advanced semiconductor fabrication processes.
5. The integrated circuit structure according to claim 3, wherein a gap extending in the second direction is provided between the first write drive unit and the second write drive unit, and a projection of a section of the first read and write data bus and a projection of a section of the second read and write data bus are located in the gap.
The invention relates to an integrated circuit structure designed to improve data handling efficiency in memory devices, particularly focusing on the spatial arrangement of write drive units and data buses. The structure addresses the challenge of optimizing the layout of memory arrays to enhance performance and reduce interference between components. The integrated circuit includes a first write drive unit and a second write drive unit, each responsible for driving data to memory cells. A gap is provided between these units, extending in a second direction, which allows for the placement of sections of a first and second read and write data bus within this gap. This arrangement ensures that the data buses are positioned in close proximity to their respective write drive units, minimizing signal path lengths and reducing latency. The gap also helps isolate the write drive units from each other, reducing crosstalk and improving signal integrity. The overall design aims to enhance data transfer rates and reliability in memory operations by optimizing the physical layout of the circuit components.
6. The integrated circuit structure according to claim 3, wherein the first bank group and the second bank group are located in a second region, and the second region, the first region, and the write control unit are sequentially arranged in the second direction.
The invention relates to an integrated circuit structure designed to improve layout efficiency and performance in semiconductor devices. The structure includes multiple memory bank groups and a write control unit, arranged to optimize signal routing and reduce latency. The first and second bank groups are positioned in a second region, while a first region and the write control unit are sequentially aligned in a second direction, typically orthogonal to the primary data flow direction. This arrangement minimizes signal path lengths between the write control unit and the memory banks, enhancing data write operations. The first region may contain additional circuitry, such as sense amplifiers or peripheral logic, supporting the memory banks. The sequential alignment ensures efficient use of chip real estate while maintaining high-speed data access. The structure is particularly useful in high-density memory arrays, such as DRAM or SRAM, where minimizing signal delays and optimizing layout are critical for performance. The invention addresses challenges in modern semiconductor design, including signal integrity, power consumption, and spatial efficiency, by strategically placing functional blocks to reduce interference and improve operational speed.
8. The integrated circuit structure according to claim 7, wherein the first read control unit and the second read control unit are located in a third region, the first read control unit and the second read control unit are arranged in parallel in a first direction, the third region and the read drive unit are arranged in parallel in a second direction, and the second direction is perpendicular to the first direction.
This invention relates to an integrated circuit structure designed to improve the layout and efficiency of read control units in memory devices. The structure addresses the challenge of optimizing spatial arrangement to enhance performance and reduce signal interference in integrated circuits, particularly in memory arrays. The integrated circuit includes a read drive unit and multiple read control units. The read drive unit is positioned in a first region and is responsible for generating read signals to access memory cells. The first and second read control units are located in a third region, arranged parallel to each other in a first direction. This parallel arrangement ensures efficient signal routing and minimizes signal delay. Additionally, the third region, containing the read control units, is positioned parallel to the read drive unit in a second direction, which is perpendicular to the first direction. This orthogonal layout reduces interference between the read control units and the read drive unit, improving overall circuit performance. The structure ensures that the read control units are spatially optimized to facilitate high-speed data access while maintaining signal integrity. The perpendicular arrangement of the read control units and the read drive unit further enhances the circuit's reliability and efficiency. This design is particularly useful in high-density memory devices where space and signal integrity are critical.
9. The integrated circuit structure according to claim 7, wherein the first read control unit is located in a first column, the second read control unit is located in a second column, and the read drive unit occupies the first column and the second column in a first direction.
The integrated circuit structure is designed for memory devices, specifically addressing the challenge of efficiently managing read operations in high-density memory arrays. The structure includes multiple read control units and a read drive unit that collectively enhance read performance and reduce power consumption. The first read control unit is positioned in a first column of the memory array, while the second read control unit is placed in a second column. The read drive unit spans both the first and second columns in a first direction, allowing it to drive read operations across multiple columns simultaneously. This arrangement optimizes the layout by sharing the read drive unit between adjacent columns, reducing the overall footprint and improving signal integrity. The read control units independently manage read operations for their respective columns, ensuring precise data retrieval while minimizing interference. The structure is particularly useful in high-performance memory systems where efficient read access and compact design are critical. By integrating the read drive unit across multiple columns, the design reduces redundancy and enhances scalability, making it suitable for advanced memory technologies such as DRAM or flash memory. The overall architecture improves read efficiency, lowers power consumption, and supports higher memory densities.
10. The integrated circuit structure according to claim 8, wherein the first bank group and the second bank group are located in a second region, and the second region, the third region, and the read drive unit are sequentially arranged in the second direction.
The invention relates to an integrated circuit structure designed to optimize layout and performance in semiconductor devices. The structure addresses the challenge of efficiently arranging memory banks and associated circuitry to minimize signal delays and improve spatial utilization. The integrated circuit includes multiple memory bank groups and a read drive unit, which are arranged in a specific sequence to enhance data access efficiency. The first and second bank groups are positioned within a second region, while a third region and the read drive unit are sequentially aligned in a second direction relative to the second region. This arrangement ensures that data paths between the memory banks and the read drive unit are shortened, reducing latency and improving overall system performance. The structure also allows for better thermal management and power distribution by distributing the memory banks and drive units in a balanced manner. The invention is particularly useful in high-density memory systems, such as those used in advanced microprocessors and embedded systems, where efficient layout and low-latency data access are critical.
11. The integrated circuit structure according to claim 5, wherein the first read and write data bus and the second read and write data bus are arranged in the alternating manner.
This invention relates to integrated circuit structures designed to improve data bus efficiency in memory or processing systems. The problem addressed is the need for optimized data routing to enhance performance and reduce congestion in high-density integrated circuits. The structure includes multiple read and write data buses arranged in an alternating manner to minimize interference and maximize throughput. The alternating arrangement ensures that adjacent buses do not overlap or compete for the same resources, reducing signal contention and improving data transfer reliability. The first and second read and write data buses are positioned in a staggered or interleaved configuration, allowing parallel data access without bottlenecks. This design is particularly useful in memory controllers, processors, or other high-speed data processing units where efficient data routing is critical. The alternating bus arrangement helps maintain signal integrity and reduces latency by ensuring that data paths are non-overlapping and optimized for simultaneous read and write operations. The structure may also include additional features such as shielding or buffering to further enhance performance. The overall goal is to provide a scalable and efficient data bus architecture that supports high-speed data transactions while minimizing power consumption and physical space requirements.
12. The integrated circuit structure according to claim 1, wherein the first bank group and the second bank group are arranged in parallel in a first direction.
The invention relates to an integrated circuit structure designed to improve memory organization and access efficiency. The structure includes multiple memory banks divided into at least two distinct bank groups, where each bank group contains one or more memory banks. The first bank group and the second bank group are arranged in parallel along a first direction, optimizing spatial layout and reducing access latency. This parallel arrangement enhances data retrieval and storage operations by allowing concurrent access to different bank groups, thereby improving overall system performance. The structure may also include additional features such as interleaved addressing schemes or hierarchical bank organization to further optimize memory operations. The invention addresses challenges in modern memory systems, such as high latency and inefficient data access patterns, by providing a scalable and efficient memory architecture. The parallel arrangement of bank groups ensures balanced load distribution and minimizes contention, making it suitable for high-performance computing applications.
13. The integrated circuit structure according to claim 1, wherein the plurality of read data lines and the plurality of write data lines are arranged in a first wiring region and a second wiring region in the alternating manner; the first wiring region, the read control module, and the second wiring region are arranged in parallel in a first direction; the read data lines and the write data lines extend in a second direction in the first wiring region and the second wiring region; and the second direction is perpendicular to the first direction.
This invention relates to an integrated circuit structure designed to optimize data line routing in memory or logic circuits. The structure addresses the challenge of efficiently arranging read and write data lines to minimize signal interference and improve circuit density. The key innovation involves alternating read and write data lines within two distinct wiring regions, ensuring spatial separation to reduce crosstalk and improve signal integrity. The first and second wiring regions are positioned parallel to each other in a first direction, with read and write data lines extending perpendicularly in a second direction within each region. A read control module is placed between the two wiring regions, facilitating coordinated data access. This arrangement enhances routing efficiency, reduces layout complexity, and supports higher-density circuit designs. The alternating pattern of read and write lines in separate regions minimizes electromagnetic interference while maintaining compactness. The structure is particularly useful in high-performance memory arrays, processors, or other integrated circuits requiring efficient data routing and low-latency access.
14. The integrated circuit structure according to claim 13, wherein a side of the first wiring region adjacent to the read control module is provided with a first power line extending in the second direction, and a side of the second wiring region adjacent to the read control module is provided with a second power line extending in the second direction.
This invention relates to integrated circuit structures, specifically addressing the layout and connectivity of wiring regions and power lines in semiconductor devices. The problem being solved involves optimizing the arrangement of power lines in relation to wiring regions and read control modules to improve signal integrity, reduce interference, and enhance overall circuit performance. The integrated circuit structure includes a first wiring region and a second wiring region, each connected to a read control module. The first wiring region is positioned adjacent to the read control module and includes a first power line extending in a second direction, perpendicular to the primary direction of the wiring regions. Similarly, the second wiring region, also adjacent to the read control module, includes a second power line extending in the same second direction. This configuration ensures that power lines are strategically placed to minimize signal distortion and cross-talk while maintaining efficient power distribution. The read control module is responsible for managing data read operations, and the power lines provide stable power supply to the wiring regions, which are likely used for data transmission or processing. The alignment of the power lines in the second direction ensures that they do not interfere with the primary signal paths in the wiring regions, thereby optimizing the circuit's electrical performance. This layout is particularly useful in high-density integrated circuits where space and signal integrity are critical.
15. The integrated circuit structure according to claim 14, wherein a side of the first wiring region away from the read control module is provided with a first shielding line extending in the second direction, and a side of the second wiring region away from the read control module is provided with a second shielding line extending in the second direction.
This invention relates to integrated circuit structures designed to reduce interference in memory arrays, particularly focusing on shielding techniques for wiring regions connected to read control modules. The problem addressed is signal crosstalk and noise in memory circuits, which can degrade read performance and accuracy. The solution involves integrating shielding lines adjacent to wiring regions that connect memory cells to read control circuitry. The structure includes a first wiring region and a second wiring region, each electrically coupled to a read control module. To minimize interference, a first shielding line is positioned on the side of the first wiring region opposite the read control module, extending in a second direction perpendicular to the primary wiring direction. Similarly, a second shielding line is placed on the side of the second wiring region opposite the read control module, also extending in the second direction. These shielding lines act as barriers to electromagnetic interference, preventing signal degradation between adjacent wiring regions or external noise sources. The shielding lines may be conductive traces or grounded structures, depending on the specific implementation. This design ensures reliable signal transmission during read operations, improving memory circuit performance in high-density integrated circuits.
16. The integrated circuit structure according to claim 13, wherein the first read and write data bus and the second read and write data bus extend in a third wiring region in the second direction, the third wiring region is arranged between the first wiring region and the second wiring region, a side of the third wiring region adjacent to the first wiring region is provided with a third power line, a side of the third wiring region adjacent to the second wiring region is provided with a fourth power line, and both the third power line and the fourth power line extend in the second direction.
This invention relates to integrated circuit structures, specifically addressing the layout and routing of data buses and power lines in semiconductor devices. The problem being solved involves optimizing the arrangement of read and write data buses and power lines to improve signal integrity, reduce interference, and enhance overall circuit performance. The integrated circuit structure includes a first read and write data bus and a second read and write data bus, both extending in a third wiring region in a second direction. This third wiring region is positioned between a first wiring region and a second wiring region. To minimize interference and ensure stable power distribution, a third power line is placed on the side of the third wiring region adjacent to the first wiring region, while a fourth power line is placed on the opposite side adjacent to the second wiring region. Both the third and fourth power lines extend in the same second direction as the data buses, ensuring consistent power delivery and reducing noise. The first wiring region and the second wiring region may contain additional circuitry or interconnects, but their specific functions are not detailed. The arrangement ensures that the data buses are shielded by power lines, reducing crosstalk and improving signal integrity. This configuration is particularly useful in high-density integrated circuits where efficient use of space and reliable signal transmission are critical. The invention focuses on the spatial relationship between the data buses and power lines to enhance performance in semiconductor devices.
18. The memory structure according to claim 17, wherein the first bank group, the second bank group, the third bank group, and the fourth bank group are commonly connected to the read data bus and the write data bus, the read data bus comprises the plurality of read data lines, the write data bus comprises the plurality of write data lines, and the plurality of read data lines and the plurality of write data lines extend in the second direction.
This invention relates to a memory structure designed to improve data access efficiency in semiconductor memory devices. The problem addressed is the need for efficient data routing between multiple memory banks and peripheral circuits, particularly in high-density memory arrays where traditional bus architectures can create bottlenecks or increase latency. The memory structure includes a plurality of memory banks organized into at least four distinct bank groups: a first bank group, a second bank group, a third bank group, and a fourth bank group. Each bank group contains multiple memory banks, and all four bank groups are commonly connected to a shared read data bus and a shared write data bus. The read data bus consists of multiple read data lines, and the write data bus consists of multiple write data lines. Both the read and write data lines extend in a second direction, which is typically perpendicular to the direction in which the memory banks are arranged. This shared bus architecture allows simultaneous data access from multiple bank groups, reducing contention and improving throughput. The design ensures that data can be read from or written to any bank group without requiring dedicated buses for each group, thereby optimizing space and reducing complexity in the memory layout. The structure is particularly useful in high-performance memory systems where low-latency and high-bandwidth access are critical.
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June 1, 2022
April 30, 2024
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