Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.
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2. The cover ring of claim 1, wherein the cover ring includes a first ring that extends downward from a lower surface of the annular body, wherein an inner surface of the first ring is tapered to extend downward and radially outward and an outer surface of the first ring extends vertically downward, wherein the first ring and the inner lip define a first channel therebetween to accommodate a deposition ring.
This invention relates to a cover ring used in semiconductor processing, particularly for plasma etching or deposition systems. The cover ring is designed to protect the processing chamber while allowing precise control of the deposition or etching process. The problem addressed is ensuring proper sealing and alignment of the cover ring with other components, such as a deposition ring, while maintaining structural integrity during high-temperature or plasma environments. The cover ring includes an annular body with an inner lip extending downward from its lower surface. A first ring also extends downward from the annular body, positioned outward from the inner lip. The first ring has a tapered inner surface that slopes downward and outward, while its outer surface extends vertically downward. This design creates a first channel between the first ring and the inner lip, which is specifically shaped to accommodate a deposition ring. The tapered inner surface of the first ring ensures proper alignment and seating of the deposition ring, while the vertical outer surface provides structural stability. The channel's geometry helps maintain precise positioning of the deposition ring, preventing misalignment or damage during processing. This configuration improves process uniformity and reduces particle contamination in semiconductor manufacturing.
3. The cover ring of claim 2, wherein a second ring extends downward from a lower surface of the annular body, wherein an inner surface of the second ring extends downward and radially outward.
This invention relates to a cover ring for a mechanical assembly, particularly for sealing or guiding components in rotating machinery. The problem addressed is improving the structural integrity and sealing performance of cover rings in such applications, where traditional designs may suffer from inadequate sealing or misalignment due to manufacturing tolerances or operational stresses. The cover ring includes an annular body with a second ring extending downward from its lower surface. The second ring has an inner surface that slopes downward and outward, creating a tapered or flared geometry. This design enhances sealing by ensuring tight contact with mating components, compensates for misalignment, and improves load distribution. The annular body may also include features like a flange or groove for additional structural support or attachment to other parts. The second ring's outward taper helps guide components during assembly and maintains alignment under dynamic conditions, reducing wear and improving longevity. The invention is particularly useful in high-precision applications where sealing and alignment are critical, such as in turbomachinery or rotating shafts. The tapered second ring ensures consistent performance even under varying operational conditions.
4. The cover ring of claim 3, wherein an outer lip extends downward from the annular body, wherein the second ring and the outer lip define a second channel therebetween to accommodate an inner lip of a process shield.
This invention relates to a cover ring for semiconductor processing equipment, specifically addressing the need for improved sealing and alignment between the cover ring and a process shield. The cover ring includes an annular body with an outer lip extending downward from its perimeter. The outer lip and a second ring (which is part of the cover ring) form a second channel between them. This channel is designed to receive and secure an inner lip of a process shield, ensuring precise alignment and a tight seal during semiconductor fabrication processes. The cover ring's structure helps prevent contamination and improves process stability by minimizing gaps and misalignments between components. The second channel's configuration allows for efficient assembly and disassembly while maintaining consistent performance. This design is particularly useful in plasma etching or deposition systems where tight tolerances and reliable sealing are critical. The cover ring's features enhance durability and reduce maintenance requirements by providing a robust interface between the cover ring and the process shield.
5. The cover ring of claim 4, wherein the outer lip extends downward from the annular body beyond the inner lip.
This invention relates to a cover ring for a mechanical assembly, particularly for sealing or protecting components in rotating machinery such as turbines or pumps. The problem addressed is ensuring proper sealing and alignment while maintaining structural integrity under high-speed rotational forces and thermal conditions. The cover ring includes an annular body with an inner lip and an outer lip extending radially. The outer lip extends downward from the annular body beyond the inner lip, creating an asymmetrical structure. This design improves sealing performance by ensuring the outer edge of the ring maintains contact with a mating surface, even under dynamic conditions. The inner lip provides structural support and alignment, while the extended outer lip enhances sealing efficiency by increasing contact area and pressure distribution. The annular body may be made of a durable material such as metal or composite, with the lips designed to flex slightly under operational loads to maintain a tight seal. The downward extension of the outer lip beyond the inner lip ensures that the outer edge remains in contact with a mating surface, preventing leaks or misalignment. This configuration is particularly useful in high-speed applications where precise sealing and stability are critical. The invention may also include additional features such as grooves or coatings to further enhance sealing performance and durability.
6. The cover ring of claim 1, wherein the plurality of protrusions have rounded edges.
A cover ring for a mechanical or electronic device is designed to protect internal components from environmental damage, such as dust, moisture, or physical impact. The cover ring includes a base structure with a plurality of protrusions extending outward to engage with a mating component, ensuring secure attachment and proper alignment. The protrusions have rounded edges to reduce stress concentrations and prevent damage to the mating component during assembly or disassembly. This design improves durability and reliability by minimizing wear and tear on both the cover ring and the mating part. The rounded edges also facilitate smoother engagement, reducing the risk of misalignment or improper fitting. The cover ring may be used in various applications, including consumer electronics, automotive components, or industrial machinery, where protection and secure attachment are critical. The rounded protrusions enhance the overall performance and longevity of the assembly.
7. The cover ring of claim 1, wherein the terminal portion of the inner lip extends radially inward beyond the planar substrate contact surface of the plurality of protrusions.
This invention relates to a cover ring for a semiconductor processing system, specifically addressing the challenge of maintaining a secure and uniform seal between the cover ring and a planar substrate during processing. The cover ring includes an inner lip with a terminal portion that extends radially inward beyond the planar substrate contact surface of a plurality of protrusions. These protrusions are positioned on the inner lip and are designed to contact the substrate, ensuring proper alignment and minimizing particle generation. The terminal portion of the inner lip extends further inward than the contact points of the protrusions, which helps to prevent substrate damage and improves sealing performance. The cover ring is typically used in semiconductor manufacturing processes, such as chemical mechanical planarization (CMP), where precise control of substrate positioning and sealing is critical. The design ensures that the substrate remains flat and stable during processing, reducing defects and enhancing yield. The protrusions distribute contact pressure evenly, while the extended terminal portion provides additional support and alignment, contributing to overall process reliability.
8. A process kit comprising the cover ring of claim 1, and further comprising a deposition ring, wherein an upper surface of the deposition ring and the plurality of protrusions of the cover ring, together, are configured to clamp an outer rim of a substrate.
A process kit for semiconductor manufacturing includes a cover ring and a deposition ring designed to securely clamp the outer rim of a substrate during processing. The cover ring features a plurality of protrusions on its lower surface, which engage with the upper surface of the deposition ring to hold the substrate in place. The deposition ring is positioned beneath the cover ring, and its upper surface aligns with the protrusions to create a clamping mechanism. This configuration ensures the substrate remains stable during deposition or etching processes, preventing misalignment or damage. The cover ring and deposition ring are typically made of materials compatible with plasma processing, such as ceramic or metal, to withstand high temperatures and corrosive environments. The design minimizes particle generation and improves process uniformity by providing consistent pressure distribution across the substrate's edge. This system is particularly useful in plasma-enhanced chemical vapor deposition (PECVD) or physical vapor deposition (PVD) applications where precise substrate handling is critical. The clamping mechanism reduces edge defects and enhances yield by maintaining substrate integrity throughout the process.
9. The process kit of claim 8, wherein the cover ring, when disposed on the deposition ring, has a space of about 700 to about 850 micrometers between a clamping surface of the deposition ring and the planar substrate contact surface of the plurality of protrusions.
This invention relates to a process kit for semiconductor manufacturing, specifically addressing the challenge of maintaining precise spacing and alignment between components during deposition processes. The process kit includes a deposition ring and a cover ring designed to interface with a planar substrate. The deposition ring has a clamping surface that secures the substrate, while the cover ring features a plurality of protrusions with a planar substrate contact surface. The cover ring is positioned on the deposition ring such that there is a controlled gap of approximately 700 to 850 micrometers between the clamping surface of the deposition ring and the planar substrate contact surface of the protrusions. This precise spacing ensures uniform deposition and minimizes defects by preventing excessive contact or misalignment during processing. The cover ring may also include a recessed region to accommodate variations in substrate thickness, further enhancing process consistency. The design ensures that the substrate remains properly supported while allowing for efficient material deposition, addressing issues related to uneven deposition or substrate damage in semiconductor fabrication.
11. The process chamber of claim 10, wherein the cover ring includes a first ring that extends downward from a lower surface of the cover ring, wherein an inner surface of the ring extends downward and radially outward, wherein the first ring and the inner lip define a first channel therebetween to accommodate a deposition ring.
This invention relates to process chambers used in semiconductor manufacturing, specifically addressing the challenge of managing deposition buildup on chamber components. The process chamber includes a cover ring positioned around a substrate support to protect the chamber walls from deposition material. The cover ring has a first ring extending downward from its lower surface, with an inner surface that slopes downward and outward. This first ring, along with an inner lip of the cover ring, forms a first channel between them. This channel is designed to accommodate a deposition ring, which collects and retains deposition material that would otherwise accumulate on the chamber walls. The deposition ring can be easily removed and replaced, reducing maintenance downtime. The cover ring's design ensures that the deposition ring is securely held in place while allowing for efficient material collection. This configuration improves process consistency and extends the operational life of the chamber by minimizing contamination and reducing the need for frequent cleaning. The invention is particularly useful in plasma-enhanced deposition processes where material deposition on chamber surfaces is a significant issue.
12. The process chamber of claim 11, further comprising a deposition ring disposed on the substrate support, the deposition ring having a first raised portion that extends into the first channel when the cover ring and the deposition ring clamp the outer rim of the substrate therebetween.
The invention relates to a process chamber for semiconductor manufacturing, specifically addressing the challenge of maintaining substrate edge uniformity during deposition processes. The process chamber includes a substrate support with a cover ring and a deposition ring that clamp the outer rim of a substrate. The deposition ring has a first raised portion that extends into a first channel formed in the substrate support when the rings clamp the substrate. This configuration ensures precise alignment and sealing of the substrate edge, preventing deposition material from accumulating on the substrate's backside or edge, which can lead to defects. The deposition ring's raised portion interacts with the channel to create a controlled deposition environment, improving uniformity and yield. The substrate support may also include additional channels and features to manage gas flow and deposition uniformity. The cover ring and deposition ring work together to securely hold the substrate while allowing for thermal expansion, reducing stress and warping. This design is particularly useful in plasma-enhanced chemical vapor deposition (PECVD) and other deposition processes where edge uniformity is critical. The invention aims to enhance process consistency and reduce defects in semiconductor fabrication.
13. The process chamber of claim 10, further comprising a process shield disposed in the interior volume about the substrate support, wherein an inner lip of the process shield overlaps with an outer lip of the cover ring to form a tortuous flow path therebetween.
This invention relates to a process chamber for semiconductor manufacturing, specifically addressing the challenge of controlling gas flow and particle contamination during substrate processing. The process chamber includes a substrate support for holding a substrate, such as a semiconductor wafer, and a cover ring surrounding the substrate support to protect its edges. The cover ring has an outer lip that extends upward. A process shield is positioned within the chamber's interior volume, surrounding the substrate support. The process shield has an inner lip that overlaps with the outer lip of the cover ring, creating a tortuous flow path between them. This overlapping design disrupts and redirects gas flow, reducing particle deposition on the substrate and improving process uniformity. The tortuous path also minimizes the risk of contaminants entering the processing area, enhancing yield and reliability. The process shield and cover ring work together to manage gas dynamics, ensuring consistent processing conditions across the substrate surface. This configuration is particularly useful in plasma etching, deposition, or other semiconductor fabrication steps where precise gas flow control is critical.
14. The process chamber of claim 10, wherein the plurality of protrusions have rounded edges.
The invention relates to a process chamber used in semiconductor manufacturing, particularly for plasma etching or deposition processes. The chamber is designed to improve uniformity and efficiency in plasma distribution, addressing issues such as uneven etching or deposition due to edge effects or plasma non-uniformity. The chamber includes a plurality of protrusions extending from an inner surface, which help control plasma flow and reduce edge effects. These protrusions are arranged in a specific pattern to enhance plasma uniformity across the substrate. The protrusions have rounded edges to minimize sharp corners that could disrupt plasma flow or cause localized electric field concentrations, which could lead to non-uniform processing. The rounded edges ensure smoother plasma distribution, reducing defects and improving yield. The chamber may also include other features, such as a gas distribution system and a substrate support, to further optimize processing conditions. The overall design aims to enhance process consistency and reliability in semiconductor fabrication.
16. The method of claim 15, further comprising chucking a central portion of the substrate via an electrostatic chuck.
A system and method for handling substrates, particularly in semiconductor or microelectronic manufacturing, addresses the challenge of precise substrate positioning and stabilization during processing. The invention involves a substrate handling apparatus that includes a support structure with a plurality of support pins configured to engage a peripheral region of the substrate. These support pins are movable to adjust the substrate's position, ensuring alignment and flatness. The system further incorporates an electrostatic chuck designed to secure a central portion of the substrate, enhancing stability during processing. The electrostatic chuck applies an electrostatic force to hold the substrate in place, preventing movement or deformation. The combination of peripheral support pins and central electrostatic chucking provides precise control over substrate positioning, reducing misalignment and improving processing accuracy. This method is particularly useful in applications requiring high-precision substrate handling, such as lithography, etching, or deposition processes in semiconductor fabrication. The invention ensures consistent substrate stability, minimizing defects and improving yield in manufacturing operations.
17. The method of claim 15, further comprising placing the substrate on at a portion of a deposition ring prior to placing the substrate on the substrate support.
A method for handling substrates in a deposition process involves positioning a substrate on a portion of a deposition ring before transferring it to a substrate support. This technique is used in semiconductor or thin-film manufacturing, where precise substrate placement is critical for uniform deposition. The deposition ring helps stabilize the substrate during transfer, reducing misalignment or damage. The method ensures accurate positioning before the substrate reaches the final support, improving deposition uniformity and yield. The deposition ring may include features like alignment guides or temperature control to enhance substrate stability during the transfer process. This approach is particularly useful in processes requiring high-precision deposition, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), where substrate positioning directly impacts film quality. The method may also include additional steps like preheating the substrate or adjusting the deposition ring's position to optimize the transfer process. By integrating the deposition ring into the handling sequence, the method minimizes substrate movement errors and enhances overall deposition efficiency.
18. The method of claim 15, wherein the outer rim of the substrate comprises a region about 1.0 mm to about 3.0 mm from an outer sidewall of the substrate.
This invention relates to semiconductor processing, specifically to methods for treating the outer rim of a substrate to improve uniformity during etching or deposition processes. The problem addressed is non-uniform processing at the substrate's edge, which can lead to defects or yield loss. The method involves selectively treating a defined region of the substrate's outer rim, located approximately 1.0 mm to 3.0 mm from the outer sidewall. This region is identified as critical for maintaining process consistency across the substrate surface. The treatment may include modifying material properties, applying protective coatings, or adjusting surface chemistry to mitigate edge effects. The method ensures that the outer rim does not adversely affect the central processing area, enhancing overall uniformity and yield. The approach is particularly useful in semiconductor manufacturing where edge defects can compromise device performance. By precisely controlling the treatment of this specific rim region, the method provides a solution to edge-related processing challenges without requiring additional complex equipment or steps.
19. The method of claim 15, wherein the substrate is clamped between the plurality of protrusions of the cover ring and a deposition ring disposed on the substrate support.
A method for securing a substrate during a semiconductor manufacturing process involves clamping the substrate between a cover ring and a deposition ring. The cover ring includes multiple protrusions that engage with the substrate's edge, while the deposition ring is positioned on a substrate support. This arrangement ensures precise alignment and stabilization of the substrate, preventing movement or misalignment during deposition processes. The deposition ring may be part of a larger substrate support structure, such as a susceptor or electrostatic chuck, and is designed to support the substrate while allowing deposition materials to accumulate on its surface. The cover ring, with its protrusions, applies downward pressure on the substrate, ensuring it remains securely in place. This method is particularly useful in processes like chemical vapor deposition (CVD) or physical vapor deposition (PVD), where substrate stability is critical for uniform coating and high yield. The protrusions on the cover ring may be adjustable or fixed, depending on the specific application, to accommodate different substrate sizes or thicknesses. The deposition ring may also include features to enhance heat transfer or electrical conductivity, further improving process control. This clamping technique minimizes substrate warping, edge defects, and particle contamination, leading to higher-quality semiconductor devices.
20. The method of claim 15, wherein the substrate has a thickness of about 20 microns to about 150 microns.
A method for processing a substrate involves handling a thin, flexible substrate with a thickness ranging from approximately 20 microns to 150 microns. The substrate is positioned on a support surface, and a fluid is applied to the substrate to facilitate its movement. The fluid is then removed, allowing the substrate to be transferred to a target location. The method ensures precise handling of the thin substrate, preventing damage during transfer. The fluid application and removal steps are controlled to maintain substrate integrity and alignment. This technique is particularly useful in manufacturing processes where delicate, ultra-thin materials, such as flexible electronics or display components, require precise positioning without deformation or breakage. The method addresses challenges in handling thin substrates that are prone to bending, tearing, or misalignment during conventional transfer processes. By using a controlled fluid medium, the substrate remains stable and accurately positioned throughout the transfer operation. The thickness range of 20 to 150 microns ensures compatibility with various thin-film applications, balancing flexibility and structural stability.
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November 18, 2020
May 28, 2024
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