A method of manufacturing a substrate includes: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror. An area of a second region of the target layer is greater than an area of a first region of the target layer, wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.
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1. A method of manufacturing a substrate, the method comprising: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion of the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror, wherein an area of a second region of the target layer is greater than an area of a first region of the target layer, and wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.
A method for manufacturing a substrate with a crystallized layer involves directing a laser beam from a source onto a target layer on a substrate positioned on a stage. A portion of the laser beam that interacts with the target layer is then reflected back onto the target layer using a mirror. The area where the reflected laser beam hits (second region) is larger than the area initially hit by the laser beam (first region). The initial laser beam (first path) irradiates the first region, and the reflected beam (second path) irradiates the second region.
2. The method of claim 1 , wherein the second region comprises the first region.
The substrate manufacturing method directs a laser beam onto a target layer and reflects it back onto the same layer using a mirror, where the reflected beam covers a larger area than the initial beam. In this configuration, the larger area covered by the reflected beam (second region) includes the smaller area covered by the initial beam (first region).
3. The method of claim 2 , wherein, the reflection mirror comprises a convex reflection surface.
The substrate manufacturing method directs a laser beam onto a target layer and reflects it back onto the same layer using a mirror, where the reflected beam covers a larger area (second region) that includes the initial beam's area (first region). The reflecting mirror used in this method has a convex reflection surface. This convex shape helps to spread the reflected laser beam and increase the area of the second region.
4. The method of claim 2 , further comprising moving the stage in a first direction, wherein the second region comprises a region of the target layer outside the first region in a second direction opposite to the first direction.
The substrate manufacturing method directs a laser beam onto a target layer and reflects it back onto the same layer using a mirror, where the reflected beam covers a larger area (second region) that includes the initial beam's area (first region). The method also involves moving the stage holding the substrate in one direction. The larger area (second region) extends beyond the initial area (first region) in the opposite direction of the stage's movement.
5. The method of claim 2 , further comprising moving the stage in a first direction, wherein the second region comprises a region of the target layer outside the first region in the first direction.
The substrate manufacturing method directs a laser beam onto a target layer and reflects it back onto the same layer using a mirror, where the reflected beam covers a larger area (second region) that includes the initial beam's area (first region). The method also involves moving the stage holding the substrate in one direction. The larger area (second region) extends beyond the initial area (first region) in the same direction as the stage's movement.
6. The method of claim 2 , further comprising moving the stage in a first direction, wherein the second region comprises a region of the target layer outside the first region in a second direction opposite to the first direction and a region of the target layer outside the first region in the first direction.
The substrate manufacturing method directs a laser beam onto a target layer and reflects it back onto the same layer using a mirror, where the reflected beam covers a larger area (second region) that includes the initial beam's area (first region). The method also involves moving the stage holding the substrate in one direction. The larger area (second region) extends beyond the initial area (first region) both in the direction of the stage's movement and in the opposite direction.
7. The method of claim 1 , wherein the first path is not perpendicular to the target layer.
A method for manufacturing a substrate with a crystallized layer involves directing a laser beam from a source onto a target layer on a substrate positioned on a stage. A portion of the laser beam that interacts with the target layer is then reflected back onto the target layer using a mirror, where the area of the reflected beam (second region) is larger than the initial beam's area (first region). The initial laser beam strikes the target layer at an angle that is not perpendicular to the target layer's surface.
8. The method of claim 1 , wherein the target layer includes a silicon layer.
A method for manufacturing a substrate with a crystallized layer involves directing a laser beam from a source onto a target layer on a substrate positioned on a stage. A portion of the laser beam that interacts with the target layer is then reflected back onto the target layer using a mirror, where the area of the reflected beam (second region) is larger than the initial beam's area (first region). The target layer on the substrate includes a silicon layer.
9. The method of claim 8 , wherein the silicon layer includes an amorphous silicon layer.
A method for manufacturing a substrate with a crystallized layer involves directing a laser beam from a source onto a target layer on a substrate positioned on a stage. A portion of the laser beam that interacts with the target layer is then reflected back onto the target layer using a mirror, where the area of the reflected beam (second region) is larger than the initial beam's area (first region). The target layer includes a silicon layer, specifically an amorphous silicon layer.
10. The method of claim 1 , wherein the target layer is crystallized.
A method for manufacturing a substrate with a crystallized layer involves directing a laser beam from a source onto a target layer on a substrate positioned on a stage. A portion of the laser beam that interacts with the target layer is then reflected back onto the target layer using a mirror, where the area of the reflected beam (second region) is larger than the initial beam's area (first region). The target layer is crystallized during the manufacturing process.
11. A method of manufacturing a substrate to have a crystallized layer, the method comprising: providing a laser beam onto a first region of a substrate disposed in a chamber; reflecting a portion of the laser beam that contacted the substrate back onto a second region of the substrate by using a reflecting mirror disposed in the chamber, wherein an area of the second region is greater than an area of the first region; and moving a stage on which the substrate is disposed while the substrate is contacted with the laser beam.
This invention relates to a method for manufacturing a substrate with a crystallized layer using laser irradiation. The process addresses the challenge of efficiently crystallizing large areas of a substrate while maintaining precise control over the crystallization process. The method involves directing a laser beam onto a first region of a substrate placed in a chamber. A portion of the laser beam that interacts with the substrate is reflected back onto a second region of the substrate using a reflecting mirror positioned within the chamber. The second region has a larger area than the first region, allowing for broader crystallization coverage. The substrate is mounted on a movable stage, which is adjusted during the laser irradiation to ensure uniform exposure across the substrate. This approach enhances crystallization efficiency by leveraging reflected laser energy, reducing the need for additional laser sources while maintaining high-quality crystallization. The method is particularly useful in semiconductor and display manufacturing, where precise and scalable crystallization techniques are essential.
12. The method of claim 11 , wherein the laser beam first pre-heats a target layer on the substrate and then processes the target layer.
A method to manufacture a substrate having a crystallized layer includes providing a laser beam onto a first region of a substrate, reflecting a portion of the laser beam back onto a second region of the substrate using a mirror, and moving the stage holding the substrate while the laser beam irradiates the substrate, where the reflected region is larger than the initial region. The laser beam first pre-heats a target layer on the substrate and then processes (crystallizes) that same target layer.
13. The method of claim 12 , wherein the target layer includes amorphous silicon.
A method to manufacture a substrate having a crystallized layer includes providing a laser beam onto a first region of a substrate, reflecting a portion of the laser beam back onto a second region of the substrate using a mirror, and moving the stage holding the substrate while the laser beam irradiates the substrate, where the reflected region is larger than the initial region. The laser beam first pre-heats a target layer on the substrate and then crystallizes that target layer, where the target layer is amorphous silicon.
14. The method of claim 11 , wherein the laser beam is provided from a single laser source.
A method to manufacture a substrate having a crystallized layer includes providing a laser beam onto a first region of a substrate, reflecting a portion of the laser beam back onto a second region of the substrate using a mirror, and moving the stage holding the substrate while the laser beam irradiates the substrate, where the reflected region is larger than the initial region. The laser beam for both the initial irradiation and the reflection originates from a single laser source.
15. The method of claim 11 , wherein the area of the second region is about two times greater than the area of the first region.
A method to manufacture a substrate having a crystallized layer includes providing a laser beam onto a first region of a substrate, reflecting a portion of the laser beam back onto a second region of the substrate using a mirror, and moving the stage holding the substrate while the laser beam irradiates the substrate, where the reflected region is larger than the initial region. The area of the second region (reflected beam) is approximately two times greater than the area of the first region (initial beam).
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 17, 2015
April 25, 2017
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