An image sensor package includes a die having an active side surface and a backside surface opposite to each other and having a bonding pad disposed on the active side surface, a through via penetrating the die and being electrically connected to the bonding pad, and a first dielectric layer disposed between the through via and the die. The first dielectric layer extends to cover the backside surface of the die. A redistribution line is disposed on the first dielectric layer and is electrically connected to the through via. The redistribution line extends onto the first dielectric layer on the backside surface of the die. A second dielectric layer is disposed on the first dielectric layer to cover the redistribution line and to extend onto an outer sidewall of the die. Related methods are also provided.
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1. An image sensor package comprising: an image sensor die having an active side surface, a backside surface opposite to the active side surface, a die body portion, a terrace portion thinner than the die body portion, and a bonding pad disposed on the active side surface; a through via penetrating the terrace portion and being electrically connected to the bonding pad; a first dielectric layer disposed between the through via and the terrace portion, the first dielectric layer covering backside surfaces of the die body portion and the terrace portion; a redistribution line disposed on the first dielectric layer and electrically connected to the through via, the redistribution line extending over a portion of the first dielectric layer on the backside surface of the terrace portion; a second dielectric layer disposed on the first dielectric layer, the second dielectric layer covering the redistribution line and covering an outer sidewall between the active side surface and a backside surface of the terrace portion, an optical lid over the active side surface of the image sensor die; and a dam-like support structure attached between the optical lid and the active side surface of the terrace portion, wherein the dam-like support structure includes a groove in an edge portion of an interface between the dam-like support structure and the active side surface of the terrace portion, wherein the second dielectric layer extends from the outer sidewall of the terrace portion into the groove to cover the edge portion of the interface, and wherein the active side surface includes an image sensor device region wherein the active side surface includes an image sensor device region.
An image sensor package contains an image sensor die which has an active side, a backside, a thicker main body, and a thinner terrace area. A bonding pad is located on the active side. A through-silicon via (TSV) goes through the terrace, connecting to the bonding pad. A first insulating layer (dielectric) is between the TSV and the terrace and covers the backsides of both the main body and terrace. A redistribution line (RDL) sits on this first layer and connects to the TSV, extending onto the backside of the terrace. A second insulating layer covers the RDL and the terrace's outer sidewall. An optical lid sits over the active side. A dam-like support structure, attached between the lid and terrace, includes a groove at their interface. The second insulating layer extends into this groove, covering the edge. The active side includes an image sensor device region.
2. The image sensor package of claim 1 , wherein the first dielectric layer extends between the dam-like support structure and a portion of the second dielectric layer covering the sidewall of the terrace portion.
The image sensor package described above, which has an image sensor die with an active side, a backside, a thicker main body, and a thinner terrace area where a bonding pad is on the active side and a through-silicon via (TSV) goes through the terrace to the bonding pad, a first insulating layer (dielectric) between the TSV and the terrace covering the backsides, a redistribution line (RDL) on the first layer connecting to the TSV and extending onto the backside, a second insulating layer covering the RDL and the terrace's outer sidewall, an optical lid over the active side, and a dam-like support structure attached between the lid and terrace with a groove filled by the second insulating layer, features the first insulating layer extending between the dam-like support and a part of the second insulating layer that covers the terrace sidewall.
3. The image sensor package of claim 1 , further comprising an outer tail portion that laterally protrudes from a lower portion of the sidewall of the terrace portion over the dam-like support structure, and a thickness of the outer tail portion is less than a thickness of the terrace portion.
The image sensor package described previously, including an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, also includes an outer tail that sticks out laterally from the lower part of the terrace sidewall, over the dam-like support. The thickness of this outer tail is less than the terrace thickness.
4. The image sensor package of claim 1 , wherein the dam-like support structure is extended to cover the bonding pad.
In the previously described image sensor package comprising an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, the dam-like support extends to cover the bonding pad.
5. The image sensor package of claim 4 , wherein the through via penetrates the bonding pad and contacts the dam-like support structure, and wherein the through via is disposed in a via hole passing through the bonding pad.
In the image sensor package previously described where the dam-like support extends to cover the bonding pad which comprises an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, the through-silicon via (TSV) goes through the bonding pad and touches the dam-like support. The TSV is located in a via hole that goes through the bonding pad.
6. The image sensor package of claim 1 , further comprising a cavity disposed between the optical lid and the active side surface of the die body portion, and a depth of the cavity is defined by a thickness of the dam-like support structure.
The image sensor package as previously described, which has an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, has a cavity between the optical lid and the active side of the main die body. The depth of this cavity is determined by the thickness of the dam-like support.
7. The image sensor package of claim 6 , further comprising a color filter array that is disposed on the image sensor device region in the cavity.
The image sensor package described in Claim 6, containing an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, dam-like support structure with a groove filled by the second dielectric, and a cavity between the optical lid and the active side of the die body defined by the dam-like support, contains a color filter array on the image sensor device region within the cavity.
8. The image sensor package of claim 1 , wherein the dam-like support structure includes an epoxy resin material, a polyimide material, a photoresist material or a solder resist material.
In the image sensor package containing an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, the dam-like support is made of epoxy resin, polyimide, photoresist, or solder resist.
9. The image sensor package of claim 1 , wherein the first dielectric layer includes an insulation layer containing silicon.
In the image sensor package comprising an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, the first insulating layer (dielectric) is an insulation layer containing silicon.
10. The image sensor package of claim 1 , wherein the second dielectric layer has an opening that exposes a solder pad portion corresponding to a portion of the redistribution line, and the image sensor package further comprises a solder ball attached to the solder pad portion.
The image sensor package as described, which includes an image sensor die (active/back sides, body/terrace, bonding pad), through-silicon via (TSV), first and second dielectric layers, redistribution line, optical lid, and dam-like support structure with a groove filled by the second dielectric, has an opening in the second insulating layer that exposes a solder pad which corresponds to a portion of the redistribution line. A solder ball is attached to this solder pad.
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June 30, 2015
May 2, 2017
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