A multi-port memory cell including: first and second magnetoresistive elements, each of which is programmable so as to adopt at least two resistive states, in which: the first magnetoresistive element is coupled with a first output line and is programmable by the direction of a current which is passed through same; and the second magnetoresistive element is coupled with a second output line and is arranged so as to be magnetically coupled with the first magnetoresistive element, the second magnetoresistive element being programmable by a magnetic field generated by the first magnetoresistive element.
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1. A multiport memory cell comprising: first and second magnetoresistive elements each programmable to have one of at least two resistive states, wherein: the first magnetoresistive element is coupled to a first output line and is programmable by the direction of a current passed through it; and the second magnetoresistive element is coupled to a second output line and is arranged to be magnetically coupled to the first magnetoresistive element, the second magnetoresistive element being programmable by a magnetic field generated by the first magnetoresistive element.
A multi-port memory cell has two magnetoresistive elements (MREs), each able to store at least two resistance values. The first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it. The second MRE connects to a second output line and is programmed, changing its resistance, by the magnetic field generated by the first MRE. This creates a memory cell where data can be written via current and read from two separate output lines.
2. The memory cell of claim 1 , further comprising at least one further magnetoresistive element programmable to have one of at least two resistive states, wherein each of the at least one further magnetoresistive element is arranged to be programmable by a magnetic field generated by the first or second magnetoresistive element.
The multi-port memory cell from the initial description, which has two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, also includes at least one additional MRE. This additional MRE can also store at least two resistance values and is programmed by the magnetic field generated by either the first or second MRE. This allows for increased storage density and potentially more complex memory operations.
3. The memory cell of claim 1 , wherein said second magnetoresistive element comprises a free ferromagnetic layer arranged to be programmed by a magnetic field generated by a free ferromagnetic layer of the first magnetoresistive element.
In the multi-port memory cell described initially, which contains two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, the second MRE contains a free ferromagnetic layer. This layer's magnetic orientation, and therefore the resistance of the second MRE, is changed by the magnetic field created by a free ferromagnetic layer in the first MRE.
4. The memory cell of claim 1 , further comprising a magnetic flux guide arranged to guide magnetic flux between the first and second magnetoresistive elements.
The multi-port memory cell, which has two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, contains a magnetic flux guide. This guide directs the magnetic field generated by the first MRE towards the second MRE, improving the efficiency and reliability of the magnetic coupling between the two elements and ensuring proper programming of the second MRE.
5. The memory cell of claim 1 , wherein said first and second magnetoresistive elements comprise free ferromagnetic layers of different dimensions from each other.
In the multi-port memory cell with two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, the free ferromagnetic layers within the first and second MREs have different dimensions. This difference in size allows for tuning the magnetic properties of each element, such as coercivity and switching field, enabling more controlled and reliable programming and reading of the memory cell.
6. The memory cell of claim 1 , wherein the average resistance of the resistive states of the first magnetoresistive element is lower than that of the second magnetoresistive element.
The multi-port memory cell composed of two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, is designed so that the first MRE has a lower average resistance than the second MRE. This difference in resistance allows for better signal differentiation when reading the state of the memory cell, improving the signal-to-noise ratio and read accuracy.
7. The memory cell of claim 1 , wherein each of the first and second magnetoresistive elements is one of: a magnetic tunnel junction with in-plane anisotropy; and a magnetic tunnel junction with perpendicular-to-plane anisotropy.
The multi-port memory cell, which contains two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, uses magnetic tunnel junctions (MTJs) as the MREs. These MTJs can be either in-plane anisotropy MTJs or perpendicular-to-plane anisotropy MTJs. This allows for flexibility in design and optimization of the memory cell's performance characteristics.
8. The memory cell of claim 1 , wherein: the first and second magnetoresistive elements are magnetic tunnel junctions with in-plane anisotropy; the second magnetoresistive element is further programmable by a current passed through it; and the first magnetoresistive element is further programmable by a magnetic field generated by the second magnetoresistive element.
The multi-port memory cell, composed of two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, uses magnetic tunnel junctions (MTJs) with in-plane anisotropy for both MREs. Furthermore, the second MRE can also be programmed by a current passed through it, and the first MRE can also be programmed by a magnetic field generated by the second MRE, enabling more complex and potentially faster writing schemes.
9. The memory cell of claim 1 , further comprising at least one further magnetoresistive element programmable to have one of at least two resistive states, and wherein the first, second and at least one further magnetoresistive elements are magnetic tunnel junctions with in-plane anisotropy arranged in a line.
In the described multiport memory cell, which includes two magnetoresistive elements (MREs) each programmable to have one of at least two resistive states, wherein the first MRE is coupled to a first output line and is programmable by the direction of a current passed through it, and the second MRE is coupled to a second output line and is arranged to be magnetically coupled to the first magnetoresistive element, the second MRE being programmable by a magnetic field generated by the first MRE, there is at least one additional MRE, also programmable to have one of at least two resistive states. The first, second, and at least one additional MRE are all magnetic tunnel junctions with in-plane anisotropy and are arranged in a line.
10. The memory cell of claim 1 , wherein the first and second magnetoresistive elements are magnetic tunnel junctions with in-plane anisotropy separated from each other by a distance of between 100 and 300 nm.
In the multi-port memory cell using two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, both MREs are magnetic tunnel junctions (MTJs) with in-plane anisotropy, and they are separated by a distance of between 100 and 300 nanometers. This specific spacing optimizes the magnetic coupling efficiency between the two MTJs.
11. The memory cell of claim 1 , further comprising at least one further magnetoresistive element programmable to have one of at least two resistive states, and wherein the first, second and at least one further magnetoresistive elements are magnetic tunnel junctions with perpendicular-to-plane anisotropy, and wherein the second and at least one further magnetoresistive elements are each positioned an equal distance from said first magnetoresistive element.
In the multi-port memory cell that uses two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE, there is at least one additional MRE, also programmable to have one of at least two resistive states. The first, second, and at least one additional MRE are all magnetic tunnel junctions with perpendicular-to-plane anisotropy. The second and any further MREs are positioned at equal distances from the first MRE.
12. A memory device comprising: an array of the memory cells of claim 1 ; and a read/write circuit adapted to program the resistive state of said first magnetoresistive element and read the resistive state of said second magnetoresistive element.
A memory device consists of an array of multi-port memory cells. Each memory cell has two magnetoresistive elements (MREs) each able to store at least two resistance values, where the first MRE connects to a first output line and changes its resistance based on the direction of current flowing through it, and the second MRE connects to a second output line and is programmed by the magnetic field generated by the first MRE. A read/write circuit is included to program the resistance value of the first MRE and to read the resistance value of the second MRE.
13. A method of forming a multiport memory cell comprising: forming first and second magnetoresistive elements each programmable to have one of at least two resistive states, the elements being separated by a distance chosen such that the second magnetoresistive element is magnetically coupled to the first magnetoresistive element and is programmable by a magnetic field generated by the first magnetoresistive element; coupling the first magnetoresistive element to a first output line; and coupling the second magnetoresistive element to a second output line.
A method for creating a multi-port memory cell includes forming two magnetoresistive elements (MREs), each capable of storing at least two resistance values. These MREs are placed at a specific distance such that the second MRE is magnetically linked to the first and can be programmed by the magnetic field that the first MRE generates. The first MRE is then connected to a first output line, and the second MRE is connected to a second output line. This creates a memory cell where data is written via current and read from separate outputs.
14. The method of claim 13 , further comprising forming a magnetic flux guide for guiding magnetic flux between the first and second magnetoresistive elements.
The method for creating a multi-port memory cell that involves forming two magnetoresistive elements (MREs) each capable of storing at least two resistance values, where these MREs are placed at a specific distance to be magnetically coupled, the second MRE being programmable by the magnetic field of the first MRE, connecting the first MRE to a first output line, and connecting the second MRE to a second output line, also includes forming a magnetic flux guide. This guide directs the magnetic flux between the first and second MREs, improving the efficiency of magnetic coupling.
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December 15, 2014
May 16, 2017
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