A manufacturing method of a substrate structure is provided. The method includes the following steps. Firstly, a conductive carrier is provided. Then, a first metal layer is formed on the conductive carrier. Then, a second metal layer is formed on the first metal layer. Then, a third metal layer is formed on the second metal layer, wherein each of the second metal layer and the third metal layer has a first surface and a second surface opposite to the first surface, the first surface of the third metal layer is connected to the second surface of the second metal layer, the surface area of the first surface of the third metal layer is larger than the surface area of the second surface of the second metal layer, and the first metal layer, the second metal layer and the third metal layer form a conductive structure.
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1. A manufacturing method of substrate structure, comprising: providing a conductive carrier; forming a first photoresist layer on the conductive carrier, wherein the first photoresist layer is patterned to form a plurality of first openings exposing the conductive carrier; forming a first metal layer in the plurality of first openings; forming a second photoresist layer on the first photoresist layer and the first metal layer, wherein the second photoresist layer is patterned to form a plurality of second openings exposing the first metal layer; forming a second metal layer in the plurality of second openings; and forming a third metal layer on the second metal layer; wherein each of the second metal layer and the third metal layer has a first surface and a second surface opposite the first surface, the first surface of the third metal layer is connected to the second surface of the second metal layer, and a surface area of the first surface of the third metal layer is larger than a surface area of the second surface of the second metal layer.
A method for manufacturing a substrate structure involves first providing a conductive carrier. A patterned photoresist layer with openings is formed on the carrier, and a first metal layer is deposited in these openings. A second patterned photoresist layer with openings is formed, and a second metal layer is deposited in those openings on top of the first metal layer. Finally, a third metal layer is formed on top of the second metal layer. The second and third metal layers are designed such that the third metal layer's bottom surface (contacting the second metal layer) has a larger surface area than the top surface of the second metal layer. This creates a conductive structure on the conductive carrier using photoresist and metal deposition.
2. The manufacturing method of substrate structure according to claim 1 , wherein the second metal layer comprises at least one of copper or nickel.
The substrate manufacturing method detailed in Claim 1, which involves forming first, second, and third metal layers using patterned photoresist on a conductive carrier, specifies that the second metal layer, which is sandwiched between the first and third, is made of either copper or nickel.
3. The manufacturing method of substrate structure according to claim 1 , wherein a thickness of the third metal layer is larger than or equal to a thickness of the second metal layer.
The substrate manufacturing method detailed in Claim 1, which involves forming first, second, and third metal layers using patterned photoresist on a conductive carrier, specifies that the third metal layer (the topmost metal layer) is equal to or thicker than the second metal layer.
4. The manufacturing method of substrate structure according to claim 1 , wherein each of the first metal layer and the third metal layer comprises at least one of copper, nickel, palladium or gold.
The substrate manufacturing method detailed in Claim 1, which involves forming first, second, and third metal layers using patterned photoresist on a conductive carrier, specifies that the first and third metal layers are composed of copper, nickel, palladium, or gold.
5. The manufacturing method of substrate structure according to claim 1 , wherein the first metal layer, the second metal layer and the third metal layer is formed by an electroplating process.
The substrate manufacturing method detailed in Claim 1, which involves forming first, second, and third metal layers using patterned photoresist on a conductive carrier, specifies that electroplating is the method used to form the first, second, and third metal layers.
6. The manufacturing method of substrate structure according to claim 1 , wherein the step of forming the third metal layer comprises: forming a third photoresist layer on the second photoresist layer and the second metal layer, wherein the third photoresist layer is patterned to form a plurality of third openings exposing the second metal layer; forming the third metal layer in the third openings.
The substrate manufacturing method detailed in Claim 1, which involves forming first, second, and third metal layers using patterned photoresist on a conductive carrier, forms the third metal layer by first applying a third patterned photoresist layer with openings to expose the second metal layer. The third metal layer is then deposited within these openings, effectively building it on top of the second metal layer, using photoresist as a mask.
7. The manufacturing method of substrate structure according to claim 6 , further comprising: removing the first photoresist layer, the second photoresist layer and the third photoresist layer.
The substrate manufacturing method described in Claim 6, which involves creating metal layers using multiple photoresist layers (first, second, and third) to build up the layers, further includes the step of removing all of the photoresist layers (first, second and third) after the metal layers are formed, leaving only the metal structure on the conductive carrier.
8. A manufacturing method of substrate structure, comprising: providing a conductive carrier; forming a first photoresist layer on the conductive carrier, wherein the first photoresist layer is patterned to form a plurality of first openings exposing the conductive carrier; forming a first metal layer in the plurality of first openings; forming a second photoresist layer on the first photoresist layer and the first metal layer, wherein the second photoresist layer is patterned to form a plurality of second openings exposing the first metal layer; forming a third photoresist layer on the second photoresist layer, wherein the third photoresist layer is patterned to form a plurality of third openings exposing the plurality of second openings and a part of the second photoresist layer forming a second metal layer and a third metal layer in the plurality of second openings and the plurality of third openings at the same time; and removing the first photoresist layer, the second photoresist layer and the third photoresist layer, wherein the first metal layer, the second metal layer and the third metal layer form a conductive structure on the conductive carrier; wherein each of the second metal layer and the third metal layer has a first surface and a second surface opposite the first surface, the first surface of the third metal layer is connected to the second surface of the second metal layer, and a surface area of the first surface of the third metal layer is larger than a surface area of the second surface of the second metal layer.
A method for manufacturing a substrate structure involves providing a conductive carrier. A first patterned photoresist layer with openings is formed, followed by a first metal layer in the openings. A second patterned photoresist layer is formed. Then, a third patterned photoresist layer is formed, where the openings in the third photoresist expose both the openings in the second photoresist AND a portion of the second photoresist itself. The second and third metal layers are then formed *simultaneously* in the combined openings. Finally, the photoresist layers are removed. The second and third metal layers are designed such that the third metal layer's bottom surface (contacting the second metal layer) has a larger surface area than the top surface of the second metal layer. This creates a conductive structure.
9. The manufacturing method of substrate structure according to claim 1 or claim 8 , further comprising: forming a dielectric layer to encapsulate the first metal layer, the second metal layer and the third metal layer.
The substrate manufacturing method, described either as a method of sequential metal deposition using multiple photoresist layers (Claim 1), or as simultaneous deposition of the second and third metal layers through a combined photoresist mask (Claim 8), further involves encapsulating the formed metal layers (first, second, and third) in a dielectric layer, providing insulation and structural support.
10. The manufacturing method of substrate structure according to claim 9 , wherein the step of forming the dielectric layer comprises: disposing the conductive structure in a cavity of a mold; introducing a thermosetting material into the cavity to cover the conductive structure; and curing the thermosetting material to form the dielectric layer.
The method of Claim 9, which encapsulates the metal structure (first, second, and third layers) in a dielectric material, forms this dielectric layer by placing the conductive structure into a mold cavity. A thermosetting material is then injected into the cavity to completely surround the metal structure, and the material is cured to form the solid dielectric layer.
11. The manufacturing method of substrate structure according to claim 9 , further comprising: removing a part of the dielectric layer to expose the second surface of the third metal layer.
The substrate manufacturing method described in Claim 9, which encapsulates the metal structure in a dielectric layer, includes the additional step of removing a portion of the dielectric layer to expose the top surface of the third metal layer. This allows access to the metal structure for further processing or connection.
12. The manufacturing method of substrate structure according to claim 11 , further comprising: etching the second surface of the third metal layer, such that the second surface of the third metal layer is recessed corresponding to a bottom surface of the dielectric layer.
The substrate manufacturing method of Claim 11, which exposes the top surface of the third metal layer, continues by etching that exposed surface so that it is recessed relative to the surrounding dielectric layer. The etching creates a step or depression in the third metal layer.
13. The manufacturing method of substrate structure according to claim 9 , further comprising: etching the conductive carrier to expose a surface of the first metal layer.
The substrate manufacturing method described in Claim 9, which encapsulates the metal structure in a dielectric layer, includes the additional step of etching away a portion of the original conductive carrier material to expose the bottom surface of the first metal layer. This allows access to the metal structure from the opposite side.
14. The manufacturing method of substrate structure according to claim 13 , further comprising: etching the surface of the first metal layer, such that the surface of the first metal layer is recessed corresponding to a to surface of the dielectric layer.
The method of Claim 13, which etches the conductive carrier to expose the bottom surface of the first metal layer, then etches the exposed bottom surface of the first metal layer. This etching creates a recessed surface on the first metal layer relative to the surrounding dielectric layer, forming a step or depression.
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March 4, 2016
May 16, 2017
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