A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.
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1. A method for forming a transparent semi-conductor device, comprising: producing a plasma ball using a microwave plasma source in the presence of a mixture of gases, the plasma ball having a diameter; disposing the plasma ball at a first distance from a substrate, the substrate maintained at a first temperature; maintaining the plasma ball at the first distance from the substrate for a first time; depositing a nanocrystalline diamond film on the substrate, the nanocrystalline diamond film having a thickness, the nanocrystalline diamond film having a transparency of greater than about 80 percent; doping the nanocrystalline diamond film with at least one of a p-type dopant and a n-type dopant; and annealing the substrate with the nanocrystalline diamond film disposed thereon at a second temperature for a second time.
A method for creating a transparent semiconductor device involves using a microwave plasma source to generate a plasma ball within a gas mixture. The plasma ball, which has a specific diameter, is positioned at a defined distance from a substrate that is held at a particular temperature. The plasma ball remains at this distance for a set time, which allows a nanocrystalline diamond film to deposit onto the substrate. This diamond film has a defined thickness and a transparency exceeding 80%. The diamond film is then doped with either a p-type or n-type dopant to modify its electrical properties. Finally, the substrate with the diamond film is annealed at a second temperature for a second duration, which enhances the semiconductor properties of the final structure.
2. The method of claim 1 , wherein a frequency of the microwave plasma source is about 915 MHz.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, specifically uses a microwave plasma source operating at a frequency of approximately 915 MHz.
3. The method of claim 1 , wherein the diameter of the plasma ball is about 15 cms to about 30 cms.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, involves using a plasma ball with a diameter ranging from about 15 centimeters to about 30 centimeters.
4. The method of claim 1 , wherein the mixture of gases includes argon, methane and hydrogen.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, uses a mixture of gases including argon, methane, and hydrogen to create the plasma.
5. The method of claim 1 , wherein the first temperature is in the range of about 200 degrees Celsius to about 450 degrees Celsius.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, maintains the substrate at a first temperature between approximately 200 degrees Celsius and 450 degrees Celsius during the diamond film deposition process.
6. The method of claim 1 , wherein the thickness of the nanocrystalline diamond film is in the range of about 30 nm to about 150 nm.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, creates a nanocrystalline diamond film with a thickness ranging from about 30 nanometers to about 150 nanometers.
7. The method of claim 1 , wherein the second temperature is about 800 degrees Celsius to about 1,200 degrees Celsius.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, involves annealing the substrate and the deposited nanocrystalline diamond film at a temperature between approximately 800 degrees Celsius and 1,200 degrees Celsius.
8. The method of claim 1 , wherein the second time is less than about 20 seconds.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, performs the annealing process for a duration less than approximately 20 seconds.
9. The method of claim 1 , wherein the substrate includes at least one of silicon oxide, glass, quartz, indium tin oxide, aluminum oxide, magnesium oxide and sapphire.
This method for creating a transparent semiconductor device, which involves generating a plasma ball using a microwave plasma source in the presence of a gas mixture, positioning the plasma ball a defined distance from a substrate held at a particular temperature, depositing a nanocrystalline diamond film with high transparency by maintaining this distance for a set time, doping the film with p-type or n-type dopants, and annealing the substrate with the diamond film at a second temperature for a second duration, utilizes a substrate made of silicon oxide, glass, quartz, indium tin oxide, aluminum oxide, magnesium oxide, or sapphire.
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July 10, 2015
August 22, 2017
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