There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.
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1. A method of manufacturing a semiconductor device, comprising: forming an oxide film on a surface of a substrate by alternately supplying a source gas and an ozone gas so as not to be mixed with each other by setting (a)-(e) as one cycle and repeating the cycle multiple times: (a) supplying the source gas into a processing chamber in which the substrate is accommodated; (b) first-exhausting an atmosphere in the processing chamber; (c) reserving the ozone gas into a gas reservoir connected to the processing chamber, with a volume ratio of 1/2100 to 1/105 to the processing chamber, by supplying the ozone gas into the gas reservoir; (d) flush-supplying the ozone gas reserved in the gas reservoir into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber while maintaining the supply of the ozone gas into the gas reservoir and so that the within a range of 0.1 to 1000 Pa, after a prescribed amount of the ozone gas is reserved in the gas reservoir; and (e) second-exhausting an atmosphere in the processing chamber.
A method for making semiconductor devices involves creating an oxide film on a substrate surface. This is done by alternating between a source gas and ozone gas, ensuring they don't mix. The process repeats the following steps: (a) introducing the source gas into the chamber holding the substrate; (b) removing the atmosphere from the chamber; (c) storing ozone gas in a reservoir connected to the chamber (reservoir volume is 1/2100 to 1/105 of the chamber volume); (d) rapidly injecting the stored ozone into the chamber while maintaining ozone supply to the reservoir and substantially stopping chamber exhaust, achieving a pressure between 0.1 and 1000 Pa after a set ozone amount is stored; (e) removing the chamber atmosphere again.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein at least a part of the first-exhaust and the reserve of the ozone gas are performed simultaneously.
The method of manufacturing a semiconductor device from the previous description involves forming an oxide film on a substrate by alternating a source gas and ozone gas. At least part of the process of first removing the chamber atmosphere (step b) and the reserving of the ozone gas (step c) are performed at the same time, which refers to removing atmosphere from the processing chamber while also reserving ozone gas into a gas reservoir connected to the processing chamber, with a volume ratio of 1/2100 to 1/105 to the processing chamber.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein in the supply of the ozone gas, the substrate is heated at a temperature of the substrate of 180° C. to 250° C. and a temperature in the gas reservoir is set to the temperature of the substrate or less.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by alternating source and ozone gas, uses a heated substrate. When supplying the ozone gas, the substrate temperature is kept between 180°C and 250°C, and the gas reservoir temperature is set to be the same as, or lower than, the substrate temperature. The process involves source gas introduction, atmosphere removal, ozone gas reservation into a small reservoir, rapid ozone injection while halting exhaust, and another atmosphere removal, repeated multiple times.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein in the supply of the ozone gas, the substrate is heated at the temperature of the substrate of 180° C. to 250° C., a temperature of an ozone gas supply path is set to the temperature of the substrate or less, and the temperature in the gas reservoir is set to the temperature of the ozone supply path or less.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by alternating source and ozone gas, uses temperature control. The substrate is heated to 180°C to 250°C during ozone gas supply. The ozone gas supply path temperature is also kept at or below the substrate temperature. Furthermore, the gas reservoir temperature is set at or below the ozone supply path temperature. The process involves source gas introduction, atmosphere removal, ozone gas reservation into a small reservoir, rapid ozone injection while halting exhaust, and another atmosphere removal, repeated multiple times.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein an inside of the gas reservoir is cooled.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by alternating source and ozone gas, involves cooling. The inside of the gas reservoir, which stores the ozone gas before it's rapidly injected into the processing chamber, is actively cooled to help stabilize the ozone. The process involves source gas introduction, atmosphere removal, ozone gas reservation into a small reservoir, rapid ozone injection while halting exhaust, and another atmosphere removal, repeated multiple times.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein an inner wall of the gas reservoir is coated with a film.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by alternating source and ozone gas, incorporates a coating. The inner wall of the gas reservoir, where ozone is stored before rapid injection, is coated with a film. This film may prevent ozone decomposition or reaction with the reservoir walls. The process involves source gas introduction, atmosphere removal, ozone gas reservation into a small reservoir, rapid ozone injection while halting exhaust, and another atmosphere removal, repeated multiple times.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the film is an oxide film.
The method of manufacturing a semiconductor device from the previous description involves the gas reservoir's inner wall being coated with a film, where the film is an oxide film. This process forms an oxide film on a substrate by alternating a source gas and ozone gas, with intermediate steps for atmosphere removal, ozone gas reservation into a small reservoir, rapid ozone injection while halting exhaust, and another atmosphere removal, repeated multiple times.
8. A method of manufacturing a semiconductor device, comprising: forming an oxide film on a surface of a substrate by setting (a)-(c) as one cycle and repeating the cycle multiple times: (a) reserving an ozone gas into a gas reservoir connected to the processing chamber, with a volume ratio of 1/2100 to 1/105 to the processing chamber, by supplying the ozone into the gas reservoir; (b) flush-supplying the ozone gas reserved in the gas reservoir into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber while maintaining the supply of the ozone gas into the gas reservoir, after a prescribed amount of the ozone gas is reserved in the gas reservoir and so that the pressure in the processing chamber immediately after supplying the ozone gas is set to be within a range of 0.1 to 1000 Pa; and (c) exhausting an atmosphere in the processing chamber.
A method for making semiconductor devices involves creating an oxide film on a substrate surface. This is done by repeating the following steps: (a) storing ozone gas in a reservoir connected to the chamber (reservoir volume is 1/2100 to 1/105 of the chamber volume); (b) rapidly injecting the stored ozone into the chamber while maintaining ozone supply to the reservoir and substantially stopping chamber exhaust, achieving a pressure between 0.1 and 1000 Pa immediately after ozone supply; (c) removing the chamber atmosphere.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein in the supply of the ozone gas, the substrate is heated at a temperature of the substrate of 180° C. to 250° C. and a temperature in the gas reservoir is set to the temperature of the substrate or less.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by reserving ozone, rapidly injecting it, and exhausting the chamber, uses a heated substrate. When supplying the ozone gas, the substrate temperature is kept between 180°C and 250°C, and the gas reservoir temperature is set to be the same as, or lower than, the substrate temperature. The reservoir has a volume ratio of 1/2100 to 1/105 to the processing chamber.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein in the supply of the ozone gas, the substrate is heated at the temperature of the substrate of 180° C. to 250° C., a temperature of an ozone gas supply path is set to the temperature of the substrate or less, and the temperature in the gas reservoir is set to the temperature of the ozone gas supply path or less.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by reserving ozone, rapidly injecting it, and exhausting the chamber, uses temperature control. The substrate is heated to 180°C to 250°C during ozone gas supply. The ozone gas supply path temperature is also kept at or below the substrate temperature. Furthermore, the gas reservoir temperature is set at or below the ozone supply path temperature. The reservoir has a volume ratio of 1/2100 to 1/105 to the processing chamber.
11. The method of manufacturing a semiconductor device according to claim 8 , wherein an inside of the gas reservoir is cooled.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by reserving ozone, rapidly injecting it, and exhausting the chamber, involves cooling. The inside of the gas reservoir, which stores the ozone gas before it's rapidly injected into the processing chamber, is actively cooled to help stabilize the ozone. The reservoir has a volume ratio of 1/2100 to 1/105 to the processing chamber.
12. The method of manufacturing a semiconductor device according to claim 8 , wherein an inner wall of the gas reservoir is coated with a film.
The method of manufacturing a semiconductor device that forms an oxide film on a substrate by reserving ozone, rapidly injecting it, and exhausting the chamber, incorporates a coating. The inner wall of the gas reservoir, where ozone is stored before rapid injection, is coated with a film. This film may prevent ozone decomposition or reaction with the reservoir walls. The reservoir has a volume ratio of 1/2100 to 1/105 to the processing chamber.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein the film is an oxide film.
The method of manufacturing a semiconductor device from the previous description involves the gas reservoir's inner wall being coated with a film, where the film is an oxide film. This process forms an oxide film on a substrate by reserving ozone, rapidly injecting it into the processing chamber while maintaining ozone supply and stopping exhaust, and exhausting the chamber. The reservoir has a volume ratio of 1/2100 to 1/105 to the processing chamber.
14. A method of manufacturing a semiconductor device, comprising: setting (a)-(d) as one cycle and repeating the cycle several times: (a) supplying a source gas into a processing chamber, by opening a first valve provided in a source gas supply path for supplying the source gas into the processing chamber in which a substrate is accommodated; (b) reserving an ozone gas in a gas reservoir with a volume ratio of 1/2100 to 1/105 to the processing chamber, provided in an ozone gas supply path for supplying the ozone gas into the processing chamber by opening a third valve provided at an upstream side of the gas reservoir in the ozone gas supply path with a second valve provided at a downstream side of the gas reservoir in the ozone gas supply path closed and with a fourth valve provided in an exhaust path for exhausting the atmosphere in the processing chamber opened; (c) flush-supplying the ozone gas reserved in the gas reservoir into the processing chamber by opening the second valve with the third valve opened and the fourth valve closed; and (d) exhausting an atmosphere in the processing chamber.
A method for manufacturing semiconductor devices involves repeating these steps: (a) supplying a source gas into the processing chamber by opening a valve in the source gas supply path; (b) reserving ozone gas in a reservoir (volume ratio 1/2100 to 1/105 of the processing chamber) by opening a valve upstream of the reservoir and opening the exhaust valve, while the valve downstream of the reservoir is closed; (c) rapidly supplying the reserved ozone gas into the processing chamber by opening the downstream valve, while the upstream valve remains open and the exhaust valve is closed; and (d) exhausting the atmosphere from the processing chamber.
15. The method of manufacturing a semiconductor device according to claim 14 , wherein in the supply of the ozone gas, the substrate is heated at a temperature of the substrate of 180° C. to 250° C. and a temperature in the gas reservoir is set to the temperature of the substrate or less.
The method of manufacturing a semiconductor device that includes sequentially opening and closing valves to control source gas and ozone flow to form an oxide film, uses a heated substrate. When supplying the ozone gas, the substrate temperature is kept between 180°C and 250°C, and the gas reservoir temperature is set to be the same as, or lower than, the substrate temperature. The process includes opening a valve for source gas, reserving ozone in a small reservoir, rapidly injecting ozone by opening other valves, and exhausting the chamber.
16. The method of manufacturing a semiconductor device according to claim 15 , wherein in the supply of the ozone gas, the substrate is heated at the temperature of the substrate of 180° C. to 250° C., a temperature of an ozone gas supply path is set to the temperature of the substrate or less, and the temperature in the gas reservoir is set to the temperature of the ozone supply path or less.
The method of manufacturing a semiconductor device that includes sequentially opening and closing valves to control source gas and ozone flow to form an oxide film, uses temperature control. The substrate is heated to 180°C to 250°C during ozone gas supply. The ozone gas supply path temperature is also kept at or below the substrate temperature. Furthermore, the gas reservoir temperature is set at or below the ozone supply path temperature. The process includes opening a valve for source gas, reserving ozone in a small reservoir, rapidly injecting ozone by opening other valves, and exhausting the chamber.
17. The method of manufacturing a semiconductor device according to claim 14 , wherein an inside of the gas reservoir is cooled.
The method of manufacturing a semiconductor device that includes sequentially opening and closing valves to control source gas and ozone flow to form an oxide film, involves cooling. The inside of the gas reservoir, which stores the ozone gas before it's rapidly injected into the processing chamber, is actively cooled to help stabilize the ozone. The process includes opening a valve for source gas, reserving ozone in a small reservoir, rapidly injecting ozone by opening other valves, and exhausting the chamber.
18. The method of manufacturing a semiconductor device according to claim 14 , wherein an inner wall of the gas reservoir is coated with a film.
The method of manufacturing a semiconductor device that includes sequentially opening and closing valves to control source gas and ozone flow to form an oxide film, incorporates a coating. The inner wall of the gas reservoir, where ozone is stored before rapid injection, is coated with a film. This film may prevent ozone decomposition or reaction with the reservoir walls. The process includes opening a valve for source gas, reserving ozone in a small reservoir, rapidly injecting ozone by opening other valves, and exhausting the chamber.
19. The method of manufacturing a semiconductor device according to claim 18 , wherein the film is an oxide film.
The method of manufacturing a semiconductor device from the previous description involves the gas reservoir's inner wall being coated with a film, where the film is an oxide film. The manufacturing method includes controlling gas flow with valves in a sequence of supplying a source gas, reserving ozone in a small reservoir by opening a valve upstream of the gas reservoir in the ozone gas supply path with a second valve provided at a downstream side of the gas reservoir in the ozone gas supply path closed and with a fourth valve provided in an exhaust path for exhausting the atmosphere in the processing chamber opened, rapidly injecting ozone, and exhausting the chamber.
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May 13, 2015
September 19, 2017
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