A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.
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1. A method for producing an optoelectronic component, the method comprising: providing an optoelectronic semiconductor chip having a front side and rear side, wherein the front side of the optoelectronic semiconductor chip is provided for passage of electromagnetic radiation; applying a sacrificial layer on the rear side, wherein the sacrificial layer has substantially the same lateral dimensions as the rear side; forming a molded body, wherein the optoelectronic semiconductor chip is at least partly embedded into the molded body; and removing the sacrificial layer, wherein an electrically conducting conductive element with a conductive element sacrificial layer arranged on the conductive element is embedded together with the optoelectronic semiconductor chip into the molded body, and wherein the conductive element sacrificial layer is removed together with the sacrificial layer.
A method for making an optoelectronic component involves placing an optoelectronic semiconductor chip (with a front side for light passage and a back side) into a mold. A sacrificial layer, the same size as the back of the chip, is applied to the back side before molding. An electrically conductive element, also with its own sacrificial layer, is placed in the mold alongside the chip. After molding, both sacrificial layers (on the chip and the conductive element) are removed, exposing the back of the chip and conductive element for further processing or electrical connection.
2. The method as claimed in claim 1 , wherein, before removing the sacrificial layer, the method further comprises partly removing the molded body in order to make the sacrificial layer accessible.
The optoelectronic component production method described previously, where a chip with a sacrificial layer on its rear is embedded in a molded body, and an electrically conducting element with a sacrificial layer is also embedded, and both sacrificial layers are removed, further includes a step of partially removing some of the molded body to expose the sacrificial layer on the chip before its removal. This allows better access to the sacrificial layer for the removal process.
3. The method as claimed in claim 1 , wherein the optoelectronic semiconductor chip is embedded into the molded body in such a way that the front side of the optoelectronic semiconductor chip is flush with an underside of the molded body.
In the optoelectronic component production method where a chip with a sacrificial layer on its rear is embedded in a molded body, and an electrically conducting element with a sacrificial layer is also embedded, and both sacrificial layers are removed, the optoelectronic semiconductor chip is embedded in the molded body such that its light-transmitting front surface is level with the bottom surface of the molded body. This ensures the light emitting/receiving surface is easily accessible after the component is fabricated.
4. The method as claimed in claim 3 , further comprising, before forming the molded body, arranging the optoelectronic semiconductor chip on a carrier, wherein the front side of the optoelectronic semiconductor chip faces a surface of the carrier.
The optoelectronic component production method, where a chip with a sacrificial layer on its rear is embedded in a molded body such that its light-transmitting front surface is level with the bottom surface of the molded body, includes initially placing the chip on a carrier before molding. The light-transmitting front side of the chip faces the surface of the carrier during the molding process.
5. The method as claimed in claim 4 , wherein a first lateral section of the surface of the carrier is elevated relative to a second lateral section of the surface of the carrier.
The method of placing the optoelectronic semiconductor chip on a carrier before molding, where the light-transmitting front side of the chip faces the carrier surface, is further refined by having the carrier surface with different height levels. Specifically, a first area of the carrier surface is higher than a second area of the carrier surface. The optoelectronic semiconductor chip is placed on the elevated section of the carrier.
6. The method as claimed in claim 4 , further comprising detaching the molded body from the carrier.
The optoelectronic component production method, where a chip is placed on a carrier with the light-transmitting front side facing the carrier surface before molding, and the chip is embedded in a molded body, also includes detaching the molded body containing the embedded chip from the carrier after the molding process is complete.
7. The method as claimed in claim 1 , wherein the optoelectronic semiconductor chip is provided with a metallization arranged on the rear side.
In the optoelectronic component production method where a chip with a sacrificial layer on its rear is embedded in a molded body, and an electrically conducting element with a sacrificial layer is also embedded, and both sacrificial layers are removed, the optoelectronic semiconductor chip has a metal layer (metallization) already applied to its back surface before the sacrificial layer is applied.
8. The method as claimed in claim 7 , further comprising, after removing the sacrificial layer, electrolessly depositing a metal on the rear side of the optoelectronic semiconductor chip.
The optoelectronic component production method, where the chip has a metal layer on its rear and a sacrificial layer is applied over it, and after sacrificial layer removal, includes an additional step of depositing more metal on the now exposed back surface of the optoelectronic semiconductor chip by electroless plating. This builds up the metal contact on the back of the chip.
9. The method as claimed in claim 8 , further comprising surface grinding the metal deposited on the rear side of the optoelectronic semiconductor chip, and the molded body.
The optoelectronic component production method, where additional metal is deposited on the chip back surface after sacrificial layer removal, further includes grinding the newly deposited metal on the back of the optoelectronic semiconductor chip and also grinding the surface of the molded body itself to achieve a desired flatness or thickness.
10. The method as claimed in claim 1 , wherein a plurality of optoelectronic semiconductor chips are embedded together into the molded body, and wherein the molded body is divided in order to obtain a plurality of optoelectronic components.
The optoelectronic component production method, where a chip with a sacrificial layer on its rear is embedded in a molded body, and an electrically conducting element with a sacrificial layer is also embedded, and both sacrificial layers are removed, can be scaled up to embed multiple optoelectronic semiconductor chips together within the same molded body. After processing, the molded body is then cut into individual components.
11. The method as claimed in claim 1 , wherein the front side of the optoelectronic semiconductor chip comprises a light emitting surface.
In the optoelectronic component production method where a chip with a sacrificial layer on its rear is embedded in a molded body, and an electrically conducting element with a sacrificial layer is also embedded, and both sacrificial layers are removed, the light-transmitting front surface of the optoelectronic semiconductor chip is a light-emitting surface (LED).
12. A method for producing a plurality of optoelectronic components, the method comprising: adhering a plurality of optoelectronic semiconductor chips to a top side of a carrier, each optoelectronic semiconductor chip having a front side and a rear side, the rear side opposite the front side, wherein each front side faces the top side of the carrier, each front side being provided for passage of electromagnetic radiation, and wherein each rear side has a sacrificial layer formed thereon, wherein the sacrificial layers have substantially the same lateral dimensions as the rear sides; adhering a plurality of electrically conductive elements to the top side of the carrier, each electrically conductive element comprising a sacrificial layer, wherein the electrically conductive elements are embedded together with the optoelectronic semiconductor chips into a molded body; forming the molded body over the top side of the carrier, wherein each optoelectronic semiconductor chip is embedded in the molded body; removing a portion of the molded body in order to expose the sacrificial layer of each optoelectronic semiconductor chip; removing the sacrificial layer of each optoelectronic semiconductor chip; forming a metallization on the rear side of each optoelectronic semiconductor chip; exposing the metallization of the rear side and a surface of the front side of each optoelectronic semiconductor chip by surface grinding the molded body over the rear side and detaching the molded body from the carrier; and singulating the molded body to obtain the plurality of optoelectronic components, each optoelectronic component including an electrically conductive element.
A method for manufacturing multiple optoelectronic components. Optoelectronic chips, each with a front (light-passage) and back side, are attached front-side-down to a carrier. A sacrificial layer is applied to the back of each chip. Conductive elements, also with sacrificial layers, are also attached to the carrier. A mold is formed, embedding all chips and elements. The mold is partially removed to expose the sacrificial layers, which are then removed. Metal is applied to the back of each chip to form a metallization layer. The metallization and the chip's front surface are exposed by grinding and detachment from the carrier. Finally, the mold is cut to separate the individual components, each containing a chip and a conductive element.
13. The method as claimed in claim 12 , wherein forming the metallization comprises electrolessly depositing a metal on the rear side of the optoelectronic semiconductor chip.
The method for manufacturing multiple optoelectronic components (attaching chips and conductive elements to a carrier, molding, removing sacrificial layers, grinding, and singulating) refines the metallization step. The metal application to the rear of each chip is done using electroless plating, which simplifies the process of forming an electrical contact.
14. The method as claimed in claim 12 , wherein the top side of the carrier includes a plurality of elevated sections, the optoelectronic semiconductor chips being adhered to the elevated sections.
The method for manufacturing multiple optoelectronic components (attaching chips and conductive elements to a carrier, molding, removing sacrificial layers, grinding, and singulating) further specifies the carrier. The carrier's top surface has raised sections, and the optoelectronic chips are attached to these elevated sections.
15. The method as claimed in claim 14 , wherein, after the singulating, the optoelectronic semiconductor chip of each optoelectronic component is disposed within a cavity of material of the molded body.
In the method for manufacturing multiple optoelectronic components, where the chips are attached to raised sections on the carrier, after the molded body is cut into individual components (singulation), the optoelectronic semiconductor chip within each component is situated within a cavity of the mold material.
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January 15, 2014
October 10, 2017
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