Power amplifier having staggered cascode layout for enhanced thermal ruggedness. In some embodiments, a radio-frequency (RF) amplifier such as a power amplifier (PA) can be configured to receive and amplify an RF signal. The PA can include an array of cascoded devices connected electrically parallel between an input node and an output node. Each cascoded device can include a common emitter transistor and a common base transistor arranged in a cascode configuration. The array can be configured such that the common base transistors are positioned in a staggered orientation relative to each other.
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1. A radio-frequency amplifier comprising: an input node and an output node configured to receive a signal and provide an amplified signal, respectively; and an array of cascoded devices implemented between the input node and the output node to generate the amplified signal and including a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including a common emitter transistor and a common base transistor arranged in a cascode configuration, each of the first and second rows configured such that the common base transistors are positioned in a staggered orientation relative to each other, the staggered arrangement of cascoded devices in the first row offset relative to the staggered arrangement of cascoded devices in the second row to avoid a direct row-to-row adjacent pair of common base transistors.
A radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
2. The radio-frequency amplifier of claim 1 wherein the staggered orientation of the common base transistors provide an increase in a nearest pair spacing in the corresponding row, when compared to a non-staggered orientation.
In the RF amplifier, the staggered arrangement of the common base transistors increases the distance between the nearest common base transistors within a row, compared to a non-staggered arrangement. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
3. The radio-frequency amplifier of claim 2 wherein the common base transistor is configured to handle more power than the common emitter transistor.
The RF amplifier uses common base transistors that are designed to handle more power than the common emitter transistors. This is in addition to the staggered layout of the common base transistors increasing the distance between them, compared to a non-staggered arrangement. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
4. The radio-frequency amplifier of claim 3 wherein the increased spacing results in a smaller rise in temperature due to the operation of the radio-frequency amplifier, when compared to the non-staggered orientation.
The increased spacing between common base transistors, due to the staggered arrangement, results in a smaller temperature rise during RF amplifier operation compared to a non-staggered layout. The amplifier also uses common base transistors that are designed to handle more power than the common emitter transistors. This is in addition to the staggered layout of the common base transistors increasing the distance between them, compared to a non-staggered arrangement. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
5. The radio-frequency amplifier of claim 4 wherein the rise in temperature resulting from the staggered orientation is less than half of the rise in temperature resulting from the non-staggered orientation.
The temperature rise in the RF amplifier, resulting from the staggered orientation of the common base transistors, is less than half the temperature rise that would occur with a non-staggered orientation. The increased spacing between common base transistors, due to the staggered arrangement, results in a smaller temperature rise during RF amplifier operation compared to a non-staggered layout. The amplifier also uses common base transistors that are designed to handle more power than the common emitter transistors. This is in addition to the staggered layout of the common base transistors increasing the distance between them, compared to a non-staggered arrangement. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
6. The radio-frequency amplifier of claim 1 wherein at least some of the cascoded devices are electrically connected in parallel such that each of the input node and the output node is a respective common node for the cascoded devices electrically connected in parallel.
In the RF amplifier, at least some of the cascoded devices are electrically connected in parallel. The input node serves as a common node for the parallel-connected cascoded devices, and the output node serves as another common node for the same devices. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
7. The radio-frequency amplifier of claim 1 wherein the plurality of cascoded devices in the first row are electrically connected in parallel.
In the RF amplifier, the multiple cascoded devices in the first row are electrically connected in parallel. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance. At least some of the cascoded devices are electrically connected in parallel. The input node serves as a common node for the parallel-connected cascoded devices, and the output node serves as another common node for the same devices.
8. The radio-frequency amplifier of claim 7 wherein the plurality of cascoded devices in the second row are electrically connected in parallel.
In the RF amplifier, the multiple cascoded devices in the second row are electrically connected in parallel. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance. At least some of the cascoded devices are electrically connected in parallel. The input node serves as a common node for the parallel-connected cascoded devices, and the output node serves as another common node for the same devices. The multiple cascoded devices in the first row are electrically connected in parallel.
9. The radio-frequency amplifier of claim 1 wherein the plurality of cascoded devices in each of the first row and the second row are coupled to a common input and a common output.
In the RF amplifier, the cascoded devices in each row (first and second) are connected to a common input and a common output. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
10. The radio-frequency amplifier of claim 1 wherein each cascoded device is configured such that a base of the common emitter transistor is coupled to the input node, a collector of the common emitter transistor is coupled to an emitter of the common base transistor, and a collector of the common base transistor is coupled to the output node.
Within each cascoded device, the base of the common emitter transistor is connected to the input node, the collector of the common emitter transistor is connected to the emitter of the common base transistor, and the collector of the common base transistor is connected to the output node. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
11. The radio-frequency amplifier of claim 10 wherein a base of the common base transistor is coupled to an emitter of the common emitter transistor through a bypass capacitance.
A bypass capacitor connects the base of the common base transistor to the emitter of the common emitter transistor. The base of the common emitter transistor is connected to the input node, the collector of the common emitter transistor is connected to the emitter of the common base transistor, and the collector of the common base transistor is connected to the output node. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
12. The radio-frequency amplifier of claim 1 wherein the radio-frequency amplifier is a power amplifier.
The radio-frequency amplifier described is specifically a power amplifier. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
13. The radio-frequency amplifier of claim 12 wherein the power amplifier is configured to operate with a high-voltage supply.
This power amplifier is designed to operate with a high-voltage supply. The radio-frequency amplifier described is specifically a power amplifier. The radio-frequency (RF) amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
14. A semiconductor die comprising: a substrate; and a power amplifier implemented on the substrate and configured to receive and amplify a signal, the power amplifier including an array of cascoded devices implemented between an input node and an output node, the array including a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including a common emitter transistor and a common base transistor arranged in a cascode configuration, each of the first and second rows configured such that the common base transistors are positioned in a staggered orientation relative to each other, the staggered arrangement of cascoded devices in the first row offset relative to the staggered arrangement of cascoded devices in the second row to avoid a direct row-to-row adjacent pair of common base transistors.
A semiconductor die contains a substrate on which a power amplifier is implemented. The power amplifier amplifies an RF signal using cascoded transistors. It has an input and output for signal flow. The amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
15. A radio-frequency module comprising: a packaging substrate configured to receive a plurality of components; and a power amplification system implemented on the packaging substrate, the power amplification system including a power amplifier configured to receive and amplify a signal, the power amplifier including an input node and an output node configured to facilitate the amplification of the signal, the power amplifier further including an array of cascoded devices implemented between the input node and the output node, the array including a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row, each cascoded device including a common emitter transistor and a common base transistor arranged in a cascode configuration, each of the first and second rows configured such that the common base transistors are positioned in a staggered orientation relative to each other, the staggered arrangement of cascoded devices in the first row offset relative to the staggered arrangement of cascoded devices in the second row to avoid a direct row-to-row adjacent pair of common base transistors.
A radio-frequency module includes a packaging substrate that holds various components, including a power amplification system. The power amplification system includes a power amplifier that amplifies RF signals and has an input and an output. The power amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
16. The radio-frequency module of claim 15 wherein the radio-frequency module is a power amplifier module.
The radio-frequency module described is a power amplifier module. The radio-frequency module includes a packaging substrate that holds various components, including a power amplification system. The power amplification system includes a power amplifier that amplifies RF signals and has an input and an output. The power amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
17. The radio-frequency module of claim 15 wherein the radio-frequency module is a front-end module.
The radio-frequency module described is a front-end module. The radio-frequency module includes a packaging substrate that holds various components, including a power amplification system. The power amplification system includes a power amplifier that amplifies RF signals and has an input and an output. The power amplifier contains multiple cascoded devices (common emitter transistor + common base transistor in series). These cascoded devices are arranged in at least two rows. Within each row, the common base transistors are staggered (offset) relative to each other. The staggering in one row is offset from the staggering in the other row to avoid common base transistors in adjacent rows being directly next to each other. This staggered layout enhances thermal performance.
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February 13, 2016
October 10, 2017
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