A breakdown voltage measuring method includes the steps of measuring a breakdown voltage of a semiconductor element in a state where a surface of the semiconductor element formed in a semiconductor substrate is covered with a high boiling point fluorine fluid having a boiling point of 90° C. or higher, and cleaning the semiconductor substrate, including the semiconductor element for which the breakdown voltage is measured, with a low boiling point fluorine inert fluid having a boiling point of 80° C. or lower. Accordingly, a breakdown voltage measuring method capable of suppressing generation of an electric discharge during the measurement of the breakdown voltage and suppressing a residue of a foreign object on the cleaned semiconductor substrate, and a semiconductor device to which the breakdown voltage measuring method is implemented are provided.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A breakdown voltage measuring method comprising the steps of: measuring a breakdown voltage of a semiconductor element in a state where a surface of said semiconductor element formed in a semiconductor substrate is covered with a high boiling point fluorine inert fluid having a boiling point of 90° C. or higher; and cleaning said semiconductor substrate, including said semiconductor element for which the breakdown voltage is measured, with a low boiling point fluorine inert fluid having a boiling point of 80° C. or lower, wherein said step of cleaning includes an immersion cleaning step of cleaning said semiconductor substrate in a state where said semiconductor substrate is immersed in said low boiling point fluorine inert fluid, and wherein said step of cleaning further includes, in addition to said immersion cleaning step, a vapor cleaning step of cleaning said semiconductor substrate by means of vapor generated by evaporation of said low boiling point fluorine inert fluid.
A method for measuring the breakdown voltage of a semiconductor element involves two key steps. First, the breakdown voltage of the semiconductor element is measured while its surface, formed on a semiconductor substrate, is covered with a high boiling point fluorine inert fluid. This fluid has a boiling point of 90°C or higher. Second, the semiconductor substrate, including the semiconductor element that just had its breakdown voltage measured, is cleaned with a low boiling point fluorine inert fluid, which has a boiling point of 80°C or lower. This cleaning process includes immersing the semiconductor substrate in the low boiling point fluid and then exposing it to vapor generated by evaporating that same low boiling point fluid, ensuring thorough cleaning.
2. The breakdown voltage measuring method according to claim 1 , wherein said boiling point of said low boiling point fluorine inert fluid is 65° C. or lower.
The breakdown voltage measuring method, where the breakdown voltage of a semiconductor element is measured while covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), and the substrate is then cleaned using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C), is further refined. Specifically, the boiling point of the low boiling point fluorine inert fluid used for cleaning is 65°C or lower, optimizing the vapor cleaning process.
3. The breakdown voltage measuring method according to claim 1 , wherein a temperature of said low boiling point fluorine inert fluid in which said semiconductor substrate is immersed in said immersion cleaning step is maintained at 40° C. or lower.
The breakdown voltage measuring method, where the breakdown voltage of a semiconductor element is measured while covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), and the substrate is then cleaned using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C), includes a temperature control step. During the immersion cleaning phase, the temperature of the low boiling point fluorine inert fluid is maintained at 40°C or lower to improve cleaning efficiency and prevent damage to the semiconductor element.
4. The breakdown voltage measuring method according to claim 1 , wherein in said vapor cleaning step, said semiconductor substrate is cleaned by said vapor generated by evaporation of said low boiling point fluorine inert fluid used in said immersion cleaning step.
The breakdown voltage measuring method, where the breakdown voltage of a semiconductor element is measured while covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), and the substrate is then cleaned using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C), specifies the vapor source. In the vapor cleaning step, the vapor used to clean the semiconductor substrate is generated by evaporating the same low boiling point fluorine inert fluid that was used in the preceding immersion cleaning step, ensuring consistency and compatibility.
5. The breakdown voltage measuring method according to claim 1 , wherein a diameter of said semiconductor substrate is 150 mm or greater.
The breakdown voltage measuring method, where the breakdown voltage of a semiconductor element is measured while covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), and the substrate is then cleaned using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C), is suitable for large substrates. The semiconductor substrate being measured and cleaned has a diameter of 150 mm or greater, indicating the method's applicability to standard wafer sizes.
6. The breakdown voltage measuring method according to claim 1 , wherein said semiconductor element includes a plurality of semiconductor chips each having a quadrilateral shape with a side length of 10 mm or less.
The breakdown voltage measuring method, where the breakdown voltage of a semiconductor element is measured while covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), and the substrate is then cleaned using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C), is designed for use with multiple small semiconductor chips. The semiconductor element comprises a plurality of semiconductor chips, each having a quadrilateral shape with a side length of 10 mm or less, demonstrating the method's capability for testing densely packed chips.
7. A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate in which a semiconductor element is formed; and measuring a breakdown voltage of said semiconductor element, in said step of measuring a breakdown voltage of said semiconductor element, the breakdown voltage measuring method according to claim 1 being implemented to measure said breakdown voltage of said semiconductor element.
A method for manufacturing a semiconductor device includes two main steps: preparing a semiconductor substrate with a semiconductor element formed on it and measuring the breakdown voltage of that semiconductor element. The breakdown voltage measurement employs a specific technique: measuring the breakdown voltage while the semiconductor element is covered with a high boiling point fluorine inert fluid (boiling point >= 90°C), followed by cleaning the substrate using immersion and vapor cleaning with a low boiling point fluorine inert fluid (boiling point <= 80°C). This voltage measurement method is integral to the semiconductor device manufacturing process.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 29, 2015
October 24, 2017
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.