A method of manufacturing a semiconductor device includes: forming a resist separation layer on a first main surface of a SiC substrate; applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer; patterning the resist by photolithography; heating a stage an which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole; and after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate.
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1. A method of manufacturing a semiconductor device comprising: forming a resist separation layer on a first main surface of a SiC substrate; applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer; patterning the resist separation layer and the resist together by a single photolithography step; heating a stage on which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole; and after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate.
A method for manufacturing a semiconductor device involves these steps: First, a resist separation layer is formed on the primary surface of a silicon carbide (SiC) substrate. A resist material, which maintains its shape at temperatures of 200°C or higher, is then applied on top of the resist separation layer. Next, both the resist separation layer and the resist are patterned together in a single photolithography process. The SiC substrate is placed on a stage heated to 200°C or higher, and dry etching is performed, using the patterned resist as a mask, to create a via hole. Finally, after the via hole is formed, the resist separation layer is removed, separating the resist from the SiC substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the resist separation layer is a material soluble in an acid.
The method of manufacturing a semiconductor device described in Claim 1, which involves forming a resist separation layer on a SiC substrate, applying a high-temperature resist, patterning both layers with photolithography, dry etching to form a via hole at 200°C or higher, and removing the separation layer, specifies that the resist separation layer consists of a material that dissolves in acid. This acid-soluble material facilitates the removal of the resist separation layer after the via hole formation, allowing for easy separation of the resist from the SiC substrate.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the resist separation layer is polysilicon and removed by dry etching.
The method of manufacturing a semiconductor device described in Claim 1, which involves forming a resist separation layer on a SiC substrate, applying a high-temperature resist, patterning both layers with photolithography, dry etching to form a via hole at 200°C or higher, and removing the separation layer, specifies that the resist separation layer is made of polysilicon. The polysilicon layer is then removed using a dry etching process. This dry etching of the polysilicon layer facilitates the resist's separation from the SiC substrate after the via hole formation.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the resist separation layer is an aliphatic polyimide-based resist which is dissolved by a solvent containing N-methyl pyrrolidone when heated to a temperature of 200° C. or higher.
The method of manufacturing a semiconductor device described in Claim 1, which involves forming a resist separation layer on a SiC substrate, applying a high-temperature resist, patterning both layers with photolithography, dry etching to form a via hole at 200°C or higher, and removing the separation layer, specifies that the resist separation layer consists of an aliphatic polyimide-based resist. This specialized resist dissolves when heated to 200°C or higher in a solvent containing N-methyl pyrrolidone. This dissolution process is how the resist is separated from the SiC substrate after the via hole is formed.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the resist is an epoxy permanent resist retaining a shape at a temperature of 200° C. or higher.
The method of manufacturing a semiconductor device described in Claim 1, which involves forming a resist separation layer on a SiC substrate, applying a high-temperature resist, patterning both layers with photolithography, dry etching to form a via hole at 200°C or higher, and removing the separation layer, specifies that the resist material is an epoxy permanent resist. Crucially, this epoxy resist maintains its shape even at temperatures of 200°C or higher, ensuring it can withstand the etching process.
6. The method of manufacturing a semiconductor device according to claim 1 , further comprising: before forming the resist separation layer, forming an epitaxial layer and a source electrode on the SiC substrate; and forming the resist separation layer on a first main surface of the SiC substrate that is opposite to the epitaxial layer and the source electrode.
The method of manufacturing a semiconductor device described in Claim 1, which involves forming a resist separation layer on a SiC substrate, applying a high-temperature resist, patterning both layers with photolithography, dry etching to form a via hole at 200°C or higher, and removing the separation layer, further includes the following steps *before* the resist separation layer is formed: First, an epitaxial layer and a source electrode are created on the SiC substrate. Then, the resist separation layer is applied to the *opposite* surface of the SiC substrate, the surface that is *not* covered by the epitaxial layer and source electrode.
7. A method of manufacturing a semiconductor device comprising: forming a resist separation layer on a first main surface of a SiC substrate; applying a resist retaining a shape at a temperature of 200° C. or higher on the resist separation layer; patterning the resist by photolithography; heating a stage on which the SiC substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate by using the patterned resist as a mask to form a via hole; and after forming the via hole, removing the resist separation layer to separate the resist from the SiC substrate, and further comprising: forming a substrate separation layer on a second main surface opposite to the first main surface of the SiC substrate; applying an adhesive on the substrate separation layer; bonding the SiC substrate to a support substrate by curing the adhesive at a temperature of 200° C. or higher; forming the via hole in the SiC substrate bonded to the support substrate; and after forming the via hole, removing the substrate separation layer to separate the SiC substrate from the support substrate.
A method for manufacturing a semiconductor device comprises: forming a resist separation layer on one side of a SiC substrate; applying a high-temperature resist (stable at 200°C+) on the separation layer; patterning the resist using photolithography; dry-etching the SiC to form a via hole using the patterned resist as a mask, with the substrate heated to 200°C+; removing the resist separation layer after etching; AND also includes: forming a substrate separation layer on the *other* side of the SiC substrate; applying adhesive on this substrate separation layer; bonding the SiC to a support substrate by curing the adhesive at 200°C+; etching the via hole in the now-bonded SiC substrate; and removing the substrate separation layer to detach the SiC from the support.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein the substrate separation layer is a material soluble in an acid.
The method of manufacturing a semiconductor device described in Claim 7, involving resist and substrate separation layers, high-temperature processing, bonding to a support substrate, via hole etching, and subsequent separation, specifies that the substrate separation layer is made of a material that dissolves in acid. This acid-soluble material allows the SiC substrate to be easily detached from the support substrate after the via hole is formed.
9. The method of manufacturing a semiconductor device according to claim 7 , wherein the substrate separation layer is polysilicon and removed by dry etching.
The method of manufacturing a semiconductor device described in Claim 7, involving resist and substrate separation layers, high-temperature processing, bonding to a support substrate, via hole etching, and subsequent separation, specifies that the substrate separation layer is made of polysilicon. The polysilicon layer is removed using a dry etching process. This dry etching of the polysilicon separates the SiC substrate from the support substrate after via hole formation.
10. The method of manufacturing a semiconductor device according to claim 7 , wherein the substrate separation layer is an aliphatic polyimide-based resist which is dissolved by a solvent containing N-methyl pyrrolidone when heated to a temperature of 200° C. or higher.
The method of manufacturing a semiconductor device described in Claim 7, involving resist and substrate separation layers, high-temperature processing, bonding to a support substrate, via hole etching, and subsequent separation, specifies that the substrate separation layer is an aliphatic polyimide-based resist. This resist dissolves in a solvent containing N-methyl pyrrolidone when heated to 200°C or higher, facilitating the separation of the SiC substrate from the support substrate.
11. The method of manufacturing a semiconductor device according to claim 7 , wherein the adhesive is an epoxy permanent resist having adhesion at a temperature of 200° C. or higher.
The method of manufacturing a semiconductor device described in Claim 7, involving resist and substrate separation layers, high-temperature processing, bonding to a support substrate, via hole etching, and subsequent separation, specifies that the adhesive used to bond the SiC substrate to the support substrate is an epoxy permanent resist. This resist maintains its adhesive properties even at temperatures of 200°C or higher.
12. The method of manufacturing a semiconductor device according to claim 7 , further comprising: before forming the resist separation layer, forming an epitaxial layer and a source electrode on the SiC substrate; and forming the resist separation layer on a first main surface of the SiC substrate that is opposite to the epitaxial layer and the source electrode.
The method of manufacturing a semiconductor device described in Claim 7, involving resist and substrate separation layers, high-temperature processing, bonding to a support substrate, via hole etching, and subsequent separation, further comprises, *before* forming the resist separation layer, forming an epitaxial layer and a source electrode on the SiC substrate. The resist separation layer is then formed on the opposite side of the SiC substrate from the epitaxial layer and source electrode.
13. A method of manufacturing a semiconductor device comprising: forming a substrate separation layer on a SiC substrate; applying an adhesive on the substrate separation layer; bonding the SiC substrate to a support substrate by using the adhesive at a temperature of 200° C. or higher; heating a stage on which the SiC substrate bonded to the support substrate is placed to a temperature of 200° C. or higher by a temperature control function, and dry-etching the SiC substrate to form a via hole; and after forming the via hole, removing the substrate separation layer to separate the SiC substrate from the support substrate.
A method for manufacturing a semiconductor device includes: forming a substrate separation layer on a SiC substrate; applying an adhesive on the substrate separation layer; bonding the SiC substrate to a support substrate using the adhesive at a temperature of 200°C or higher; heating the combined SiC and support substrate to 200°C or higher; dry-etching the SiC substrate to form a via hole; and removing the substrate separation layer after forming the via hole to separate the SiC substrate from the support substrate.
14. The method of manufacturing a semiconductor device according to claim 13 , wherein the substrate separation layer is a material soluble in an acid.
The method of manufacturing a semiconductor device described in Claim 13, which involves forming a substrate separation layer, bonding to a support substrate at high temperature, etching a via hole, and then separating, specifies that the substrate separation layer is made of a material that dissolves in acid, simplifying the separation process.
15. The method of manufacturing a semiconductor device according to claim 13 , wherein the substrate separation layer is polysilicon and removed by dry etching.
The method of manufacturing a semiconductor device described in Claim 13, which involves forming a substrate separation layer, bonding to a support substrate at high temperature, etching a via hole, and then separating, specifies that the substrate separation layer is made of polysilicon. The polysilicon layer is removed using a dry etching process.
16. The method of manufacturing a semiconductor device according to claim 13 , wherein the substrate separation layer is an aliphatic polyimide-based resist which is dissolved by a solvent containing N-methyl pyrrolidone when heated to a temperature of 200° C. or higher.
The method of manufacturing a semiconductor device described in Claim 13, which involves forming a substrate separation layer, bonding to a support substrate at high temperature, etching a via hole, and then separating, specifies that the substrate separation layer is an aliphatic polyimide-based resist that dissolves in a solvent containing N-methyl pyrrolidone when heated to 200°C or higher.
17. The method of manufacturing a semiconductor device according to claim 13 , wherein the adhesive is an epoxy permanent resist having adhesion at a temperature of 200 ° C. or higher.
The method of manufacturing a semiconductor device described in Claim 13, which involves forming a substrate separation layer, bonding to a support substrate at high temperature, etching a via hole, and then separating, specifies that the adhesive used is an epoxy permanent resist that maintains adhesion even at temperatures of 200°C or higher.
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October 31, 2016
October 31, 2017
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