In the semiconductor device, a bump electrode which connects a semiconductor chip and a wiring board is made up of a first part surrounded by an insulating film and a second part exposed from the insulating film. Since it is possible to reduce a width of the bump electrode while increasing a height of the bump electrode, a distance between the neighboring bump electrodes can be increased, and a filling property of a sealing material can be improved.
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1. A semiconductor device comprising: a semiconductor substrate; a conductive layer formed on the semiconductor substrate; a first insulating film which is formed on the conductive layer and covers the conductive layer; a second insulating film which is formed on the first insulating film and includes an opening which exposes a part of a surface of the conductive layer; a bump electrode which is made up of a first part which is in contact with the conductive layer and positioned in the opening and a second part which is positioned on the opening and exposed from the second insulating film; a terminal which is connected to the bump electrode and is formed on a surface of a wiring board; and a sealing material which fills a gap between the semiconductor substrate and the wiring board, wherein the sealing material is in contact with the first insulating film on an outer side of the second insulating film which covers the periphery of the first part of the bump electrode.
A semiconductor device connects a semiconductor chip to a wiring board using a bump electrode. This electrode has two parts: a first part in contact with a conductive layer on the chip, surrounded by an insulating film, and a second part on top, exposed from the insulating film. A terminal on the wiring board connects to the bump electrode. A sealing material fills the gap between the chip and board, touching the insulating film outside the area where the bump electrode connects. This design allows for narrower bump electrodes without sacrificing height, increasing spacing between them and improving how well the sealing material fills the gaps.
2. The semiconductor device according to claim 1 , wherein a height of the first part is larger than a height of the second part.
The semiconductor device, which connects a semiconductor chip and a wiring board using a bump electrode with a first part in contact with a conductive layer and a second part exposed from an insulating film, has a specific height relationship between the electrode parts. The first part of the bump electrode, the portion in contact with the conductive layer, is taller than the second part, the portion exposed from the insulating film. This difference in height further optimizes the electrode's shape for improved connectivity and sealing.
3. The semiconductor device according to claim 1 , wherein a width of the first part is smaller than a width of the second part.
The semiconductor device, which connects a semiconductor chip and a wiring board using a bump electrode with a first part in contact with a conductive layer and a second part exposed from an insulating film, has a specific width relationship between the electrode parts. The first part of the bump electrode, the portion in contact with the conductive layer, is narrower than the second part, the portion exposed from the insulating film. This width difference contributes to better electrode spacing and sealing material flow.
4. The semiconductor device according to claim 1 , wherein the second insulating film covers a periphery of the first part of the bump electrode.
In the semiconductor device connecting a semiconductor chip to a wiring board using a bump electrode, an insulating film covers the area around the first part of the bump electrode which is in contact with a conductive layer on the chip. This ensures insulation and proper electrical isolation around the base of the electrode where it connects to the chip. The insulating film's placement relative to the bump electrode's first part is crucial for preventing short circuits and ensuring reliable performance.
5. The semiconductor device according to claim 4 , wherein a film thickness of the second insulating film is larger than a film thickness of the first insulating film.
The semiconductor device has two insulating films, a first and a second, where the second insulating film, covering the area around the base of the bump electrode, is thicker than the first insulating film. The bump electrode connects a semiconductor chip to a wiring board, with the first part in contact with a conductive layer and a second part exposed. The thicker second insulating film provides enhanced insulation and protection around the electrode's base compared to the first film.
6. The semiconductor device according to claim 1 , wherein the sealing material covers a periphery of the second part of the bump electrode and is in contact with a side surface of the second part.
The semiconductor device, connecting a semiconductor chip to a wiring board with a bump electrode, includes a sealing material that not only fills the gap between the chip and the board but also covers the outer edge of the exposed portion (second part) of the bump electrode. This sealing material is in direct contact with the side surface of this second part, providing additional mechanical support and environmental protection to the connection. This improves reliability and longevity.
7. The semiconductor device according to claim 1 further comprising: a third insulating film which covers the surface of the wiring board and exposes the terminal.
The semiconductor device connecting a semiconductor chip to a wiring board includes an additional insulating layer on the wiring board itself. This third insulating film covers the surface of the wiring board but leaves the terminal, which connects to the bump electrode, exposed. This ensures that only the intended connection point is accessible, preventing unwanted electrical contacts or shorts on the wiring board surface.
8. The semiconductor device according to claim 7 , wherein the sealing material is in contact with the third insulating film.
The semiconductor device, which connects a semiconductor chip to a wiring board with a bump electrode and includes a third insulating film exposing the terminal on the wiring board, features a sealing material that is also in contact with this third insulating film. The sealing material filling the gap between the chip and board adheres to the insulating film on the wiring board, creating a more robust and reliable seal for the entire device, protecting it from environmental factors.
9. The semiconductor device according to claim 1 further comprising: a pad electrode provided on the semiconductor substrate, wherein the conductive layer is connected to the pad electrode.
In this semiconductor device, connecting a semiconductor chip to a wiring board, a pad electrode is present on the semiconductor substrate. The conductive layer, which the bump electrode connects to, is itself connected to this pad electrode. The pad electrode serves as an intermediary connection point on the chip, allowing for easier connection between the chip's internal circuitry and the external bump electrode.
10. The semiconductor device according to claim 9 , wherein a film thickness of the conductive layer is larger than a film thickness of the pad electrode.
The semiconductor device, containing a pad electrode on the chip connected to a conductive layer, which in turn connects to the bump electrode, has a specific thickness relationship. The conductive layer is thicker than the pad electrode. This greater thickness of the conductive layer improves current carrying capacity and reduces electrical resistance in the connection between the pad and the bump electrode.
11. The semiconductor device according to claim 1 , wherein the second insulating film is made of a polyimide film.
In the semiconductor device that connects a semiconductor chip to a wiring board using a bump electrode, the insulating film covering the periphery of the base of the bump electrode is specifically made of polyimide. Polyimide is chosen for its excellent insulating properties, heat resistance, and chemical stability, making it suitable for protecting the electrical connection in the device.
12. The semiconductor device according to claim 1 , wherein the first insulating film is made of a polyimide film.
In the semiconductor device that connects a semiconductor chip to a wiring board using a bump electrode, the first insulating film is made of a polyimide film. Polyimide provides good electrical insulation and temperature resistance, ensuring reliable performance in the device by isolating the conductive layer on the semiconductor substrate.
13. The semiconductor device according to claim 1 , wherein the bump electrode is made of ternary alloy containing tin, silver and copper.
In the semiconductor device where a bump electrode connects a semiconductor chip to a wiring board, the bump electrode itself is composed of a ternary alloy containing tin, silver, and copper. This alloy composition is selected for its desirable properties such as good solderability, electrical conductivity, and mechanical strength, which are essential for a reliable electrical connection between the chip and the wiring board.
14. The semiconductor device according to claim 1 , wherein the semiconductor substrate has a rectangular shape, the semiconductor device further comprising: a dummy bump electrode that is arranged at a corner portion of the semiconductor substrate.
The semiconductor device, connecting a semiconductor chip (rectangular shaped) to a wiring board with bump electrodes, includes an extra "dummy" bump electrode placed at each corner of the chip. This dummy electrode doesn't necessarily carry a signal but is added to improve the mechanical stability and structural integrity of the device, reducing stress concentrations at the corners of the chip and improving overall reliability.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 21, 2016
October 31, 2017
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