Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.
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1. An apparatus comprising: a memory array comprising a plurality of memory cells; and support circuitry coupled to the memory array, the support circuitry comprising a semiconductor device comprising a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity; a tap to the well comprising an active area having a lightly doped area outside a boundary of the well and a more heavily doped area outside a boundary of the semiconductor structure.
A memory device includes a memory array and supporting circuitry. The support circuitry contains a semiconductor device that has a well of one conductivity type (N or P) within a semiconductor structure of the opposite conductivity type. A tap provides connection to the well. The tap includes an active area with two doping regions: a lightly doped region outside the well and a more heavily doped region outside the semiconductor structure that contains the well. This tap configuration is part of the support circuitry for the memory array.
2. The apparatus of claim 1 , wherein the memory array and the support circuitry are included in a memory device.
The memory array and support circuitry described in the previous memory device description are combined into a single, integrated memory device component. This memory device implements the tap structure.
3. The apparatus of claim 2 , further comprising a processor coupled to the memory device.
The memory device described in the previous memory device description is further connected to a processor. Therefore, the apparatus is a system that includes a processor coupled to the memory device, where the memory device contains a memory array, support circuitry, a well within a semiconductor structure, and a tap to the well comprising an active area having a lightly doped area outside a boundary of the well and a more heavily doped area outside a boundary of the semiconductor structure.
4. The apparatus of claim 1 , wherein the semiconductor structure comprises a P-well, the well comprises an N-well, the more heavily doped area comprises an N+ area, and the lightly doped area comprises an N− area.
In the memory device described previously, the semiconductor structure is a P-well, the well is an N-well, the more heavily doped area of the tap is an N+ region, and the lightly doped area of the tap is an N− region. This specifies the conductivity types and doping concentrations in one configuration of the device.
5. The apparatus of claim 4 , wherein the semiconductor structure comprises a N-well, the well comprises an P-well, the more heavily doped area comprises a P+ area, and the lightly doped area comprises a P− area.
Alternatively, in another configuration of the memory device, the semiconductor structure is an N-well, the well is a P-well, the more heavily doped area of the tap is a P+ region, and the lightly doped area of the tap is a P− region. This describes the complementary conductivity types and doping concentrations to the previous claim.
6. The apparatus of claim 1 , comprising a contact over the more heavily doped area.
The memory device described previously includes a conductive contact placed over the more heavily doped area of the tap. This contact allows electrical connection to the well through the tap.
7. The apparatus of claim 6 , wherein the active area is over a substantially vertical junction between the lightly doped area and the more heavily doped area, and wherein the contact is entirely over the more heavily doped area.
In the memory device with the tap described previously, the active area of the tap is positioned over a substantially vertical junction between the lightly doped area and the more heavily doped area. The conductive contact is entirely positioned over the more heavily doped area, not extending onto the lightly doped area. This ensures proper electrical contact and reduces parasitic effects.
8. The apparatus of claim 1 , wherein the more heavily doped area is limited to under the contact.
In the memory device containing the described tap configuration, the more heavily doped area of the tap is limited to only the region directly underneath the conductive contact. This minimizes the area of higher doping, potentially reducing capacitance or other unwanted effects.
9. The apparatus of claim 1 , wherein the well creates an electric field peak at the edge of the well within lightly doped area of the active area to increase breakdown voltage of the apparatus.
The well in the memory device tap design creates an electric field peak at the edge of the well within the lightly doped area of the tap. This electric field peak is designed to increase the breakdown voltage of the device, improving its robustness against voltage spikes.
10. The apparatus of claim 1 , comprising an isolation area, wherein the lightly doped area is between the contact and the isolation area.
The memory device with the described tap configuration also includes an isolation area. The lightly doped area of the tap is positioned between the conductive contact and this isolation area. This placement helps isolate the tap and well from other components.
11. The apparatus of claim 1 , wherein the active area is over a junction between the lightly doped area and the more heavily doped area.
In the memory device with the described tap configuration, the active area of the tap is positioned over the junction between the lightly doped area and the more heavily doped area. The position of the active area is important for creating the desired electrical connection to the well.
12. The apparatus of claim 11 , wherein the junction comprises a substantially vertical junction.
The junction between the lightly doped area and the more heavily doped area within the active area of the tap, as described in the previous memory device, is a substantially vertical junction. This specific junction geometry is used in the device design.
13. The apparatus of claim 11 , wherein the junction comprises a substantially vertical junction, and wherein the contact is entirely over the more heavily doped area.
In the previously described memory device, the junction between the lightly doped area and the more heavily doped area of the tap is substantially vertical, and the conductive contact is entirely over the more heavily doped area. The contact does not overlap the lightly doped region.
14. The apparatus of claim 11 , wherein the contact is entirely over the more heavily doped area.
In the previously described memory device, the conductive contact making connection to the more heavily doped region of the tap is entirely over the more heavily doped area.
15. The apparatus of claim 11 , wherein the contact is not over the lightly doped area.
In the previously described memory device, the conductive contact making connection to the more heavily doped region of the tap is specifically designed to not be over the lightly doped area. This ensures proper contact characteristics and avoids unwanted electrical effects.
16. An apparatus comprising: a memory array comprising a plurality of memory cells; support circuitry coupled to the memory array, the support circuitry comprising a semiconductor device comprising a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity; a tap to the well comprising an active area having a lightly doped area outside a boundary of the well and a more heavily doped area outside a boundary of the semiconductor structure; and a contact over the more heavily doped area.
A memory device includes a memory array and support circuitry. The support circuitry contains a semiconductor device that has a well of one conductivity type (N or P) within a semiconductor structure of the opposite conductivity type. A tap provides connection to the well. The tap includes an active area with two doping regions: a lightly doped region outside the well and a more heavily doped region outside the semiconductor structure that contains the well. A conductive contact is placed over the more heavily doped area of the tap. This contact allows electrical connection to the well through the tap.
17. The apparatus of claim 16 , wherein the contact is not over the lightly doped area.
In the memory device with the tap and contact as previously described, the conductive contact is specifically designed to not be over the lightly doped area. This ensures proper contact characteristics and avoids unwanted electrical effects.
18. The apparatus of claim 16 , wherein the contact is entirely over the more heavily doped area.
In the memory device with the tap and contact described previously, the conductive contact making connection to the more heavily doped region of the tap is entirely over the more heavily doped area.
19. The apparatus of claim 16 , wherein the active area is over a junction between the lightly doped area and the more heavily doped area.
In the memory device with the described tap configuration and contact, the active area of the tap is positioned over a junction between the lightly doped area and the more heavily doped area. The position of the active area is important for creating the desired electrical connection to the well.
20. The apparatus of claim 16 , wherein the junction comprises a substantially vertical junction.
In the previously described memory device incorporating a tap with a heavily doped area and a contact, the junction between the lightly doped area and the more heavily doped area is a substantially vertical junction. This specific junction geometry is used in the device design.
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May 9, 2016
December 19, 2017
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