Method of modifying a solid using laser light

According to claim, the invention at hand relates to a method for creating a detachment zone in a solid in order to detach a solid portion from the solid and, according to claim, to a method for detaching at least one solid portion from a solid.

The splitting of solids, in particular of wafers, is classically effected by means of sawing. This splitting method, however, has a plurality of disadvantages. For instance, chips are always created during sawing, which thus represent destroyed basic material. The thickness fluctuation of the sawed-off disks further also increases when the sawing height increases. In addition, the sawing element has the effect that grooves and surface damages are created on the surfaces of the disks, which are to be separated from one another.

It can thus be seen that the splitting method “sawing” involves very high material costs and costs for the reworking.

Publication WO 2013/126927 A2 further discloses a method for cutting off device layers from an original wafer. According to WO 2013/126927 A2, the overall arrangement is thereby heated up very strongly as a result of a laser application. This heating is required in order to reach stresses in the interior of the solid via the different heat expansion coefficients of the solid material and via a “handler”. It can be seen hereby that the thermal stress ability of the “handler” must be very high, because very high temperatures appear. According to WO 2013/126927 A2, the laser beams are further always introduced into the solid via a surface, which is not part of the layer to be separated. This also leads to a strong heating of the solid. The high temperatures also have the disadvantage that the solid distorts or expands unintentionally, whereby the generation of crystal lattice modifications is only possible in a highly inaccurate manner.

According to WO 2013/126927 A2, thick and large solids can thus not be processed.

It is thus the object of the invention at hand to provide an alternative method for cutting off solid portions, in particular a plurality of solid layers, from a solid.

According to the invention, the above-mentioned object is solved by means of a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, wherein the solid portion, which is to be detached, is thinner than the solid, from which the solid portion has been removed. According to the invention, the method comprises at least the steps of providing a solid, which is to be processed, wherein the solid is made of a chemical compound; providing a LASER light source or a laser radiation source, respectively; applying LASER radiation from the LASER light source to the solid, wherein the laser beams penetrate into the solid via a surface of the solid portion, which his to be cut off, wherein the LASER radiation controls the temperature of a predefined portion of the solid inside the solid in a defined manner such that a detachment zone or a plurality of partial detachment zones is formed. Particularly preferably, the temperature produced by the laser beams in the predefined portion of the solid is so high, in particular more than 200° C. or more than 500° C. or more than 800° C. or more than 1000° C. or more than 1500° C. or more than 2000° C., that the material forming the predefined portion is subject to modifications in the form of a predetermined conversion of material.

This solution is advantageous, because a material conversion or phase conversion, respectively, can preferably be effected without a local destruction of the crystal lattice, whereby a weakening or stability reduction, respectively, can be created in the solid in a highly controlled manner.

Further preferred embodiments are the subject matter of the subclaims and of the following description parts.

According to a further preferred embodiment of the invention at hand, the material conversion represents a decomposition of the chemical compound into a plurality or into all individual components or elements, respectively. This embodiment is advantageous, because the material combination, which is most suitable for cutting off the solid portion, can be adjusted in a defined manner by means of the systematic decomposition of the chemical compound of the solid.

According to the description at hand, a solid starting material is preferably understood as a monocrystalline, polycrystalline or amorphous material. Preferably, monocrystallines comprising a highly anisotropic structure are suitable because of the highly anisotropic atomic binding forces. The solid starting material preferably has a material or a material combination from one of the main groups 3, 4, 5 and/or the subgroup 12 of the periodic table of elements, in particular a combination of elements from the 3., 4., 5. main group and the subgroup 12, such as, e.g. zinc oxide or cadmium telluride.

In addition to silicon carbide, the semiconductor starting material can for example also consist of silicon, gallium arsenide GaAs, gallium nitride GaN, silicon carbide SiC, indium phosphide InP, zinc oxide, ZnO, aluminum nitride AIN, germanium, gallium(III) oxide Ga2O3, aluminum oxide Al2O3(sapphire), gallium phosphide GaP, indium arsenide InAs, indium nitride InN, aluminum arsenide AlAs or diamond.

The solid or the workpiece (e.g. wafer), respectively, preferably has a material or a material combination from one of the main groups 3, 4 and 5 of the periodic table of elements, such as, e.g., SiC, Si, SiGe, Ge, GaAs, InP, GaN, AlO(sapphire), AIN. Particularly preferably, the solid has a combination of elements from the fourth, third and fifth group of the periodic table. Possible materials or material combinations are thereby e.g. gallium arsenide, silicon, silicon carbide, etc. The solid can furthermore have a ceramic (e.g. Al2O3—aluminum oxide) or can consist of a ceramic, preferred ceramics are thereby, e.g., perovskite ceramics (such as, e.g., Pb-, O-, Ti/Zr-containing ceramics) in general and specifically lead-magnesium-niobate, barium titanate, lithium titanate, yttrium-aluminum-garnet, in particular yttrium-aluminum-garnet crystals for solid laser applications, SAW ceramics (surface acoustic wave), such as, e.g., lithium niobate, gallium orthophosphate, quartz, calcium titanate, etc. The solid thus preferably has a semiconductor material or a ceramic material or the solid particularly preferably consists of at least one semiconductor material or a ceramic material, respectively. Preferably, the solid is an ingot or a wafer. Particularly preferably, the solid is a material, which is at least partially transparent for laser beams. It is thus furthermore conceivable for the solid to have a transparent material or to partially consist of or be made of, respectively, a transparent material, such as, e.g. sapphire. Further materials, which are hereby possible as solid material alone or in combination with another material, are, e.g., “wide band gap” materials, InAlSb, high-temperature superconductors, in particular rare earths cuprate (e.g. YBa2Cu3O7). In addition or in the alternative, it is conceivable for the solid to be a photomask, wherein every photomask material known on the filing date and particularly preferably combinations thereof can be used as photomask material in the case at hand. In addition or in the alternative, the solid can further have silicon carbide (SiC) or can consist thereof.

Preferably, the solid is an ingot, which, in an initial state, i.e. in a state prior to cutting off the first solid portion, preferably weighs more than 5 kg or more than 10 kg or more than 15 kg or more than 20 kg or more than 25 kg or more than 30 kg or more than 35 kg or more than 50 kg. The solid portion is preferably a solid layer, in particular a wafer with a diameter of at least 300 mm.

According to a further preferred embodiment of the invention at hand, the LASER radiation is introduced into the solid with a pulse density of between 100 nJ/μmand 10000 nJ/μm, preferably between 200 nJ/μmand 2000 nJ/μmand particularly preferably between 500 nJ/μmand 1000 nJ/μmfor controlling the temperature in a defined manner.

According to a further preferred embodiment of the invention at hand, the receiving layer has a polymer or consists thereof, wherein the polymer is preferably polydimethylsiloxane (PDMS) or an elastomer or an epoxy resin or a combination thereof.

According to a further preferred embodiment of the invention at hand, the energy of the laser beam of the laser, in particular fs laser (femtosecond laser) is chosen in such a way that the material conversion in the solid or in the crystal, respectively, in at least one direction is smaller or larger than 30-times, or 20-times, or 10-times or 5-times or three-times the Rayleigh length.

According to a further preferred embodiment of the invention at hand, the wavelength of the laser beam of the laser, in particular of the fs laser, is chosen in such a way that the linear absorption of the solid or of the material, respectively, is less than 10 cmand preferably less than 1 cmand particularly preferably less than 0.1 cm.

According to a further preferred embodiment of the invention at hand, the solid is connected to a cooling device via a solid surface, wherein the solid surface, which is connected to the cooling device, is embodied parallel or substantially parallel to the surface, via which the laser beams penetrate into the solid, wherein the cooling device is operated as a function of the laser application, in particular as a function of the temperature control of the solid, which results from the laser application. Particularly preferably, the surface, via which the solid is connected to the cooling device, is located exactly opposite the surface, via which the laser beams penetrate into the solid. This embodiment is advantageous, because a temperature increase of the solid, which occurs in response to the generation of the modifications, can be limited or reduced. The cooling device is preferably operated in such a way that the heat input introduced into the solid by means of the laser beams is removed from the solid through the cooling device. This is advantageous, because the occurrence of thermally induced stresses or deformations can be reduced significantly through this.

According to a further preferred embodiment of the invention at hand, the cooling device has at least one sensor device for capturing the temperature of the solid and, as a function of a predefined temperature course, effects a cool-down of the solid. This embodiment is advantageous, because a temperature change of the solid can be captured in a highly accurate manner by means of the sensor device. The change of the temperature is preferably used as data input for controlling the cooling device.

According to a further preferred embodiment of the invention at hand, the cooling device is coupled to a rotating means and the cooling device comprising the solid arranged thereon is rotated by means of the rotating means during the generation of the modifications, in particular with more than 100 revolutions per minute or with more than 200 revolutions per minute or with more than 500 revolutions.

According to a further preferred embodiment of the invention at hand, the number of the generated modifications per cmis different in at least two different zones of the solid, wherein a first block of modifications is generated in a first zone, wherein the individual modifications per line are preferably generated spaced apart from one another by less than 10 μm, in particular less than 5 μm or less than 3 μm or less than 1 μm or less than 0.5 μm, and the individual lines of the first block are generated spaced apart from one another by less than 20 μm, in particular less than 15 μm or less than 10 μm or less than 5 μm or less than 1 μm, wherein a first partial detachment zone is formed by the first block of modifications and a second block of modification lines is generated in a second zone, wherein the individual modifications per line are preferably generated spaced apart from one another by less than 10 μm, in particular less than 5 μm or less than 3 μm or less than 1 μm, or less than 0.5 μm, and the individual lines of the second block are generated spaced apart from one another by less than 20 μm, in particular less than 15 μm or less than 10 μm or less than 5 μm or less than 1 μm, wherein a second partial detachment zone is formed by the second block of modifications, wherein the first zone and the second zone are spaced apart from one another by a third zone, wherein no modifications or essentially no modifications are generated in the third zone by means of laser beams, and the first zone is spaced apart from the second zone by more than 20 μm, in particular more than 50 μm or more than 100 μm or more than 150 μm or more than 200 μm. This embodiment is advantageous, because mechanical stresses, which are so large that either a local cracking of the solid can take place or that a crack is created in the solid as a result of a further triggering event, such as the thermal application of a receiving layer arranged on the solid, can be created in the solid by means of the local generation of modification blocks. It has been recognized that the modification blocks have the effect that a tear is also guided in a stable manner in a zone between two modification blocks. Thanks to the modification blocks, a controlled and highly accurate crack propagation can be effected by means of fewer modifications. This has significant advantages, because the processing time is shortened, the energy consumption is reduced, and the heating of the solid is reduced.

The modifications in the first block are preferably generated at pulse intervals of between 0.01 μm and 10 μm and/or line spacings of between 0.01 μm and 20 μm are provided, and/or a pulse repetition frequency of between 16 kHz and 20 MHz is provided.

According to a further aspect of the invention at hand, an optics, by means of which the laser beams are guided from a laser beam source to the solid, is adapted as a function of the location, at which a modification is generated, from which at least one change of the numerical aperture is effected, wherein the numerical aperture at a location in the edge zone of the solid is smaller than at a different location of the solid, which is located closer to the center of the solid. This embodiment is advantageous, because modifications comprising different properties are generated. In particular in the edge zone, i.e. in the zone of up to 10 mm or of up to 5 mm or of up to 1 mm (in radial direction) away from the edge, an optics is preferably used, which is a numerical aperture of between 0.05 and 0.3, in particular of substantially or of exactly 0.1. For the remaining zones, an optics is preferably used, in the case of which the numerical aperture is between 0.2 and 0.6, preferably between 0.3 and 0.5, and particularly preferably is substantially or exactly 0.4.

According to a further preferred embodiment of the invention at hand, the thermal application of the receiving layer comprises a cool-down of the receiving layer to a temperature of below 20° C., in particular below 10° C. or below 0° C. or below −10° C. or below 100° C. or to or below the glass transition temperature of the material of the receiving layer.

By means of the temperature control, modifications are or the material conversion is generated by means of LASER, wherein the pulse intervals are provided between 0.01 μm and 10 μm, in particular with 0.2 μm, and/or line spacings of between 0.01 μm and 20 μm, in particular with 3 μm, and/or a pulse repetition frequency of between 16 kHz and 20 MHz, in particular with 128 kHz, is provided, and/or a pulse energy of between 100 nJ and 2000 nJ, in particular with 400 nJ, is provided. Particularly preferably, a picosecond or femtosecond laser is used for the method according to the invention, in particular when applying silicon carbide, wherein the LASER preferably has a wavelength of between 800 nm and 1200 nm, in particular of 1030 nm or 1060 nm. The pulse duration is preferably between 100 fs and 1000 fs, in particular at 300 fs. Preferably, a lens for focusing the laser beam is furthermore used, wherein the lens preferably effects a 20-100-times reduction, in particular a 50-times reduction or focusing, respectively, of the LASER beam. Preferably, the optics for focusing the laser beam furthermore has a numerical aperture of between 0.1 and 0.9, in particular of 0.65.

Preferably, every material conversion effected by means of the LASER radiation represents a modification of the material of the solid, wherein the modifications can additionally or in the alternative be understood as destruction of the crystal lattice of the solid, e.g. According to a further preferred embodiment of the invention at hand, the solid is moved with respect to the LASER light source, in particular displaced, in particular rotated. The movement, in particular rotation, of the solid with respect to the LASER light source preferably takes place in a continuous manner. The rotational speeds appearing thereby preferably exceed 1 revolution per second or 5 revolutions per second or 10 revolutions per second or a linear speed of at least 100 mm/s, respectively. For this purpose, the solid is preferably arranged on a rotary table or rotary chuck, respectively, in particular by means of adhesion. The number of modification per cmof the solid surface, through which the LASER radiation penetrates into the solid in order to generate the modifications, per rotation is preferably below a predefined maximum number, wherein the maximum number of the modifications per cmand per rotation is preferably determined as a function of the solid material and/or of the energy density of the LASER radiation and/or as a function of the duration of the LASER radiation impulses. Preferably, a control device is provided, which determines the maximum number of the modifications to be generated per cmper rotation as a function of at least two or three or all of the above-mentioned parameters and preferably of further parameters by means of predefined data and/or functions. This is especially advantageous, because it was recognized that damaging vertical cracks are created, when the damage density is too high, which results from stresses, which are created between the processed zones and the zones, which have not been processed yet.

In addition or in the alternative, the modifications are generated with different patterns, in particular distances between the individual newly-generated modifications and/or with changed energy input, in particular reduced energy input, in response to consecutive rotations of the solid with respect to the LASER light source. Either the laser or the wafer or solid, respectively, can in particular be displaced in XY direction, wherein the modifications are generated as a function of the translational XY displacement. According to a preferred embodiment, an XY table is used, on which the solid is arranged during the operation of the laser. The optics, by means of which the LASER beams are deflected, is preferably readjusted or newly adjusted, respectively, continuously or in stages, in particular as a function of a movement of the solid, in particular of a rotation of the solid, by means of the already mentioned control device or an alternative control device. Due to the readjustment or new adjustment, respectively, an adjustment of a second LASER beam course preferably takes place with respect to the first LASER beam course, which is adjusted prior to the readjustment or new adjustment, respectively, which differs from the first LASER beam course. As a function of the rotation of the solid, the control device thus preferably adjusts different LASER beam courses. Particularly preferably, the LASER scanning direction is thereby in each case readjusted or newly adjusted, respectively, or changed, respectively. In addition or in the alternative, the control device preferably controls the LASER light source, the optics, in particular the scanners, and/or the device, which displaces the solid, in particular the rotary table or rotary chuck, respectively, in such a way that the energy input per rotation remains the same or decreases, wherein the energy input into the solid preferably decreases continuously, i.e. with each rotation, or decreases in stages, i.e. in each case after a plurality of rotations. Wherein the number of rotations per stage can differ from one another in the case of a gradual decrease of the energy input, a first stage can comprise more than 2 rotations, e.g., and another stage can comprise more or fewer rotations than the first stage. It is furthermore conceivable that the stages in each case comprise the same number of rotations. The stage method can further also be mixed or combined, respectively, with the continuous method.

According to a preferred embodiment, the laser beam can also repeatedly apply modifications to a line, so that a total modification is generated in a line or row, respectively. According to a further alternative, the lines can cross or overlap one another, respectively, when applying modifications to the laser, wherein the first line of the modifications can in particular intersect one another at a predetermined angle of for example 900, 450, 30°, 60° or at another freely selectable angle. The intersecting angles between lines of the laser application for generating modifications can thereby orientate themselves on the crystal orientation of the material of the solid, in order to increase the effectiveness of the added modifications.

In addition or in the alternative, the LASER light source is embodied as scanner and the generation of the modifications takes place a function of the laser scanning direction, the laser polarization direction and the crystal orientation. The devices required for generating modifications, in particular the LASER light source, the optics, in particular the scanner, and the device, which displaces the solid, in particular the rotary table or rotary chuck, respectively, is preferably controlled by means of the already mentioned control device or by means of an alternative control device, which, as a function of at least two or three of the above-mentioned parameters and preferably further parameters, by means of predefined data and/or functions.

In addition or in the alternative, the distance between the centers of two modifications, which are generated consecutively in modification generating direction or in circumferential direction of the solid, is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.

In addition or in the alternative, the outer limitations of modifications, which are generated consecutively in modification generating direction or in circumferential direction of the solid, are spaced apart from one another by less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.

The invention at hand can further refer to a method for creating a detachment zone in a solid in order to detach a solid portion from the solid, which comprises at least the below-mentioned steps of:

providing a solid, which is to be processed, providing a LASER light source, applying LASER radiation from the LASER light source to the solid, wherein the LASER radiation generates modifications, in particular crystal lattice defects, in the solid, wherein a control device for controlling the LASER light source and/or a device, which displaces the solid, in particular a rotary table or rotary chuck, respectively, and/or an optics, in particular a scanner, as a function of individual or a plurality of certain parameters or as function of individual or a plurality of these parameters is provided.

The solid is preferably rotated with respect to the LASER light source and the number of the modifications per cmof the solid surface per rotation, through which the LASER radiation penetrates into the solid in order to generate the modifications, is below a predefined maximum number, wherein the maximum number of the modifications per cmand per rotation is preferably determined as a function of the solid material and of the energy density of the LASER radiation, and/or the modifications are generated with different patterns, in particular distances between the individual newly generated modifications and/or with changed energy input, in particular reduced energy input, in response to consecutive rotations of the solid with respect to the LASER light source, and/or the LASER light source is embodied as scanner and the generation of the modifications takes place as a function of the laser scanning direction, the laser polarization direction and the crystal orientation, and/or the distance between the centers of two modifications, which are generated consecutively in modification generating direction or in circumferential direction of the solid is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm,

and/or the outer limitations of modifications, which are generated consecutively in modification generating direction or in circumferential direction of the solid, are spaced apart from one another by less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.

Preferably, the maximally possible number of the modifications, which can be generated in one displacement cycle, in particular one rotation, of the solid with respect to the optics, in particular a scanner, is determined by a plurality of parallel lines, which are in particular spaced apart from one another in radial direction, and the modifications, which can be maximally generated per line. According to a preferred embodiment, the laser beam can be divided into a plurality of laser beams by means of a diffractive optical element, in order to thus simultaneously generate a corresponding number of modifications according to the splitting of the laser beam.

The plurality of the lines preferably comprises at least two and preferably at least 10 and particularly preferably up to 50 or up to 100 or up to 200 lines. With regard to the generated patterns, it is conceivable thereby that in the case of a certain number of lines in a first displacement cycle, e.g. only every xline or every xand yline or every xand every xminus z line is provided with modifications. Concretely, every 5line, for example, could be provided with modifications. In the alternative, every 5and every 7line could be provided with modifications. In the alternative, e.g., every 5and every 5minus 2 could be provided with modifications, which would then result in that the 3, 5, 8, 1013, 15, etc. line is provided with modifications. In addition, it is possible that the modifications are generated block by block, that is, that for example a block of 50 consecutive lines includes a modification and the following 50 lines do not include any modifications at all, wherein this block of 50 lines without modification is in turn followed by a block of 50 lines comprising a modification. This means that block by block modifications of a plurality of lines are provided alternately. According to a further embodiment, the width of such alternating blocks can vary according to the distance from the edge of the sample, that is that the blocks have a smaller line number of modifications for example in the area of the edge, and have a higher line number of modifications towards the center of the sample. It is conceivable in addition or in the alternative that the distance between the lines, in which modifications are generated, change as a function of a function. In a second displacement cycle, which preferably appears after the end of the first displacement cycle, in particular after a first rotation, alternative lines, which are preferably spaced apart relative to one another, are preferably written. In the second displacement cycle and in the further displacement cycles, other line numbers can then be provided for the variables x, y, z. More or fewer variables can further be provided. In addition or in the alternative, the distance between the individual modifications of a line can be generated according to a pattern. The modifications in one line are thus preferably generated in a first displacement cycle, in particular a first rotation, e.g. only at every apoint (at which a modification is provided) or at every aand bpoint or at every aand every aminus c point. In addition or in the alternative, it is conceivable that the distance between the points, at which modifications are generated, changes as a function of a function. In a second displacement cycle, which preferably appears after the end of the first displacement cycle, in particular after a first rotation, alternative points, which are preferably spaced apart relative to one another, are preferably written. In the second displacement cycle and in the further displacement cycles, other line numbers can then be provided for the variables a, b, c. In addition or in the alternative, it is conceivable that the lines, which are processed, are determined at least as a function of a displacement point or displacement setting, respectively, in particular a rotational position, and the number of rotations and/or the points in a line, which are processed (or at which modifications are generated, respectively) are determined at least as a function of the displacement position or displacement point, in particular a rotational position, and the number of rotations. In particular in the case of linear displacement paths of the solid or of the optics, lines or strips of modifications, which are positioned at an incline to one another, in particular at a right angle, can be generated as well.

According to a further preferred embodiment, every material conversion, which is effected by means of the LASER radiation, represents a modification of the material of the solid, wherein the solid is moved in a translational manner in XY direction with respect to the LASER light source, and the number of modifications per cmof the solid surface, through which the LASER radiation penetrates into the solid in order to generate the modifications, wherein the maximum number of the modifications per cmand according to the translational movement in XY direction is preferably determined as a function of the solid material and of the energy density of the LASER radiation and/or the modifications are generated with different patterns, in particular distances between the individual newly generated modifications, and/or with changed energy input, in particular reduced energy input, according to the translational movement in XY direction of the solid with respect to the LASER light source, and/or the LASER light source is embodied as scanner, and the generation of the modifications takes place as a function of the laser scanning direction, the laser polarization direction and the crystal orientation, and/or the distance between the displacements of two modifications, which are generated consecutively in modification generating direction is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm, and/or the outer limitations of modifications, which are generated consecutively in modification generating direction, are spaced apart from one another by less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.

According to a further preferred embodiment, the LASER radiation generates modifications, in particular crystal lattice effects, in the solid, wherein the solid is moved in a translational manner with respect to the LASER light source, and the number of the modifications per cmof the solid surface, through which the LASER radiation penetrates into the solid in order to generate the modifications, wherein the maximum number of the modifications per cmand according to the translational movement in XY direction is preferably determined as a function of the solid material and of the energy density of the LASER radiation and/or the modifications are generated with different patterns, in particular distances between the individual newly generated modifications, and/or with changed energy input, in particular reduced energy input, according to the translational movement in XY direction of the solid with respect to the LASER light source, and/or the LASER light source is embodied as scanner, and the generation of the modifications takes place as a function of the laser scanning direction, the laser polarization direction and the crystal orientation, and/or the distance between the displacements of two modifications, which are generated consecutively in modification generating direction is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm, and/or the outer limitations of modifications, which are generated consecutively in modification generating direction, are spaced apart from one another by less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.

The control unit controls the generation of the modifications, for example as a function of the number of the displacement cycles and/or of the local heat development, which is preferably captured optically and/or by means of sensors, and/or as a function of the material properties, in particular the density and/or the stability and/or the thermal conductivity of the solid. The invention further relates to a method for cutting off at least one solid portion from a solid, in particular a wafer, at least comprising the steps of: arranging a receiving layer on a solid, which is treated according to a method according to one of claimsto, thermal application of the receiving layer for, in particular mechanically, generating crack expansion stresses in the solid, wherein a crack expands in the solid along the detachment zone due to the crack expansion stresses.

In, reference numeralidentifies the solid. According to the invention, modificationsare generated in the solid, in order to form a detachment zone, at which or along which, respectively, the solidis separated into at least two components. The modificationsare thereby material conversions or phase conversions, respectively, of the solid material, by means of which the detachment zoneis created. The modificationsare generated by means of at least one laser beam. The laser beampenetrates into the preferably at least partially transparent solidvia a preferably treated, in particular polished, surface. On the surface, the at least one laser beam is preferably broken, which is identified by reference numeral. The at least one laser beam then forms a focusfor generating the modification. The polished surfacecan also be identified as main surface.

also shows the treated solid, wherein a receiving layerfor introducing stresses into the solid, is arranged, in particular attached or generated, on at least one surface of the solid, in particular partially or completely covering or overlapping the surface. After splitting off the solid layer or the solid portion, respectively, from the solid, the receiving layerinitially remains on the split-off solid portion and thus serves to receive it. The receiving layerpreferably consists of a polymer material or has a polymer material, in particular PDMS. Due to a temperature control, in particular cool-down, of the receiving layer, the receiving layercontracts and thus introduces stresses into the solid, by means of which a crack is triggered and/or is generated and/or guided for cutting off the solid portion from the solid.

The LASER application of the solidparticularly preferably represents a local temperature control of the solid, in particular in the interior of the solid. Due to the temperature control, the chemical bond of the solid material changes, whereby a change, in particular reduction, of the strength or stability, respectively, of the solidresults in the applied portion. The LASER application preferably takes place in a total plane, which penetrates in the solid, wherein it is also conceivable for at least or maximally 30% or 50% or 60% or 70% or 80% or 90% of the plane, which penetrates the solid, to experience the modification according to the invention.

Reference numeralidentifies a first solid portion after cutting through the solid, and reference numeralidentifies the second solid portion after separating the solid. Reference numeralfurther identifies the surfaces, along which the two solid portions,were separated from one another.

shows a surfaceof a first solid portionand of a second solid portion, wherein the first solid portionand the second solid portionwere separated from one another along the surfaces.furthermore shows an untreated zoneor untreated portion of the solid, respectively, and a treated zoneor treated portion of the solid, respectively. The treated portionwas created by means of the LASER application according to the invention and shows that the material of the solidchanged or was converted, respectively, in this zone.

shows a Raman spectrum (reference numeral)H-SiC with conditioningB after cutting off the solid portion. Reference numeralidentifies the intensity in % and reference numeralidentifies the wave number in cm. Reference numeralfurthermore identifies the graph for the untreated material portion identified with reference numeralinand reference numeralidentified the graph for the treated material portion identified with reference numeralin. It can be gathered from the Raman spectrumthat the material portions identified by reference numeralsandhave different material properties, in particular are different materials.

The LASER application according to the invention effects a material-specific, spatially resolved cumulation of the entry input, from which a defined temperature control of the solidresults at a defined location or at defined locations and within a defined time. In a concrete application, the solidcan consist of silicon carbide, whereby a locally highly limited temperature control of the solidto a temperature of, e.g., more than 2830+/−40° C. is preferably carried out. New materials or phases, in particular crystalline and/or amorphous phases, result from this temperature control, wherein the resulting phases are preferably Si (silicon) and DLC (diamond-like carbon) phases, which are created with significantly reduced stability. The detachment portionthen results from this stability-reduced layer. The laser control preferably takes place by means of spatially resolved sample temperature measurement in order to avoid edge effects in response to the solid or wafer processing, respectively.

shows that the number of the generated modifications per cmis different in at least two different zones of the solid. In a first zone, a first blockis thereby generated at modification lines, wherein the individual modificationsper line are preferably generated spaced apart from one another by less than 10 μm, in particular less than 5 μm or less than 3 μm or less than 1 μm or less than 0.5 μm. The individual lines of the first modification blockare preferably generated spaced apart from one another by less than 20 μm, in particular less than 15 μm or less than 10 μm or less than 5 μm or less than 1 μm. Mechanical stresses are generated in the solidby means of the first blockof modifications.

In a second zone, a second blockof modification lines is generated, wherein the individual modificationsper line are preferably generated spaced apart from one another by less than 10 μm, in particular less than 5 μm or less than 3 μm or less than 1 μm or less than 0.5 μm. The individual lines of the second blockare preferably generated spaced apart from one another by less than 20 μm, in particular less than 15 μm or less than 10 μm or less than 5 μm or less than 1 μm. Mechanical stresses are generated in the solidby means of the second blockof modifications.